ERICSSON PTF10007

PTF 10007
35 Watts, 1.0 GHz
GOLDMOS ® Field Effect Transistor
Description
The PTF 10007 is a 35 Watt GOLDMOS FET intended for large
signal amplifier applications to 1.0 GHz. It operates at 55% efficiency
and 13.5 dB of gain. Nitride surface passivation and gold
metallization ensure excellent device lifetime and reliability.
•
Performance at 960 MHz, 28 Volts
- Output Power = 35 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 55% Typ
•
Full Gold Metallization
•
Silicon Nitride Passivated
•
Back Side Common Source
•
100% lot traceability
•
Available in Package 20235 as PTF 10052
Typical Output Power & Efficiency
vs. Input Power
50
100
Output Pow er (W)
80
Ef f iciency (%)
30
20
60
40
VDD = 28 V
IDQ = 300 m A
f = 960 MHz
10
Efficiency
Output Power
40
20
0
1
2
100
52
Package
20235
0
0
Package
20222
1
A -1 2000
3456 7
9723
A-1
234
569
999
3
Input Power (Watts)
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation at Tflange = 25°C
PD
120
Watts
0.7
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RqJC
1.4
°C/W
e
1
e
PTF 10007
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 5 mA
V(BR)DSS
65
70
—
Volts
Drain-Source Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
mA
Gate Threshold Voltage
VDS = 10 V, ID = 75 mA
VGS(th)
3.0
—
5.0
Volts
Forward Transconductance
VDS = 10 V, ID = 3 A
gfs
—
2.8
—
Siemens
Symbol
Min
Typ
Max
Units
Gps
12.0
13.5
—
dB
P-1dB
35
—
—
Watts
h
50
55
—
%
Y
—
—
10:1
—
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz)
Power Output at 1 dB Compression
(VDD = 28 V, IDQ = 300 mA, f = 960 MHz)
Drain Efficiency
(VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz)
Load Mismatch Tolerance
(VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz—
all phase angles at frequency of test)
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
15
10
5
0
400
40
G a in (d B )
VDD = 28 V
IDQ = 300 mA
500
600
Output Pow er (W)
700
800
900
30
20
1000
Gain (dB)
12
VDD = 28 V
40
IDQ = 300 mA
POUT = 35 W
-305
-15
20
8
Return Loss (dB)
4
925
Frequency (MHz)
930
935
940
945
950
Frequency (MHz)
2
955
10
-25
0
-35
960
Efficiency
50
50
16
Return Loss
Gain
20
60
60
Efficiency (%)
Gain
Efficiency (%)
25
Output Power & Efficiency
70
30
Broadband Test Fixture Performance
20
e
PTF 10007
Typical Performance
Intermodulation Distortion vs. Output Power
Power Gain vs. Output Power
-10
IDQ = 300 mA
15
IDQ = 150 mA
14
13
IDQ = 75 mA
12
VDD = 28 V
f = 960 MHz
1.0
10.0
-30
f1 = 960.000 MHz
f2 = 960.100 MHz
5th
-40
7th
-60
100.0
0
10
Output Power (Watts)
20
30
40
50
Output Power (Watts-PEP)
Capacitance vs. Supply Voltage
Output Power vs. Supply Voltage
45
120
40
Cds and Cgs (pF)
IDQ = 300 mA
POUT = 5 W
f = 960 MHz
35
40
VGS =0 V
f = 1 MHz
100
80
35
30
Cgs
25
60
20
15
Cds
40
10
20
30
5
Crss
0
22
24
26
28
30
32
34
0
0
10
Supply Voltage (Volts)
20
30
Supply Voltage (Volts)
Bias Voltage vs. Temperature
1.03
Voltage normalized to 1.0 V
Series show current (A)
1.02
Bias Voltage (V)
Output Power (Watts)
3rd
-50
11
0.1
-20
VDD = 28 V
IDQ = 300 m A
1.01
0.3
1.00
0.87
0.99
1.44
0.98
2.01
0.97
2.58
0.96
3.15
0.95
-20
30
80
Temp. (°C)
3
130
40
Crss (pF)
16
IMD (dBc)
Power Gain (dB)
17
e
PTF 10007
Impedance Data (shown for fixed-tuned broadband circuit)
VDD = 28 V, POUT = 35 W, IDQ = 300 mA
Z0 = 50 W
D
Z Source
Z Load
G
S
Z Source W
Frequency
Z Load W
MHz
R
jX
R
jX
850
1.48
-2.80
2.60
1.55
900
1.45
-1.65
2.60
2.30
950
1.35
-0.30
2.68
3.40
1000
1.10
0.88
2.70
4.15
Typical Scattering Parameters
(VDS = 28 V, ID = 2.0 A)
f
(MHz)
S11
S21
S12
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
400
420
440
460
480
500
520
540
560
580
600
620
640
660
680
700
720
740
760
780
800
820
840
860
880
900
920
940
960
980
1000
0.948
0.951
0.955
0.956
0.957
0.959
0.960
0.962
0.963
0.964
0.964
0.965
0.967
0.966
0.967
0.967
0.968
0.968
0.967
0.966
0.967
0.968
0.967
0.967
0.967
0.966
0.966
0.966
0.966
0.966
0.965
-167
-168
-168
-168
-168
-168
-169
-169
-169
-169
-169
-169
-169
-170
-170
-170
-170
-170
-170
-170
-170
-170
-170
-170
-170
-170
-171
-171
-171
-171
-171
3.668
3.403
3.161
2.943
2.745
2.575
2.421
2.282
2.151
2.024
1.907
1.806
1.72
1.636
1.558
1.483
1.413
1.345
1.281
1.228
1.179
1.134
1.088
1.039
0.993
0.957
0.922
0.890
0.859
0.827
0.794
33
32
30
29
28
27
26
25
24
22
22
21
21
20
19
18
18
17
17
17
16
16
15
15
14
14
14
14
13
13
12
0.006
0.005
0.005
0.005
0.004
0.004
0.004
0.004
0.003
0.003
0.003
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.003
0.003
0.003
0.003
0.003
0.004
0.004
0.004
-37
-37
-37
-36
-38
-35
-34
-30
-29
-28
-23
-20
-13
-6
3
8
21
25
33
44
51
55
59
67
68
73
75
79
81
83
86
0.858
0.866
0.877
0.886
0.892
0.898
0.903
0.907
0.911
0.913
0.919
0.925
0.929
0.929
0.929
0.928
0.930
0.932
0.935
0.937
0.938
0.939
0.938
0.938
0.938
0.941
0.943
0.941
0.942
0.943
0.942
-149
-150
-151
-152
-152
-153
-153
-154
-155
-155
-156
-156
-156
-157
-157
-157
-158
-158
-159
-159
-159
-159
-160
-160
-160
-161
-161
-161
-161
-161
-162
4
S22
e
PTF 10007
Test Circuit
Test Circuit Schematic for f = 960 MHz
DUT
C1, C5
C2
C3
C4
C6, C8
C7, C9
C10
L1
R1
R2
l1, l4
l2
l3
Circuit Board
PTF 10007
39 pF, Capacitor ATC 100 B
7.5 pF, Capacitor ATC 100 B
0.6–6.0 pF, Trimmer Capacitor, Johanson, 5701-PC
0.35–3.5 pF, Trimmer Capacitor, Johanson, 5801-PC
51 pF, Capacitor ATC 100 B
0.1 mF, 50 V, Capacitor, Digi-Key P4917-ND
100 mF, 50 V, Electrolytic Capacitor, Digi-Key P5276
4 Turn, #20 AWG, .120” I.D.
1 K, 1/4 W Resistor
10 K, 1/4 W Resistor
Microstrip 50 W
0.185 l 960 MHz
Microstrip 5.70 W
0.240 l 960 MHz
Microstrip 9.30 W
.028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper
Parts Layout (not to scale)
5
e
PTF 10007
Artwork (not to scale)
Package Mechanical Specifications
Package 20222
Ericsson Inc.
Microelectronics
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
6
Specifications subject to change without notice.
LF
© 1997, 1998, 1999, 2000 Ericsson Inc.
EUS/KR 1522-PTF 10007 Uen Rev. C 11-09-00