ERICSSON PTF10009

PTF 10009
85 Watts, 1.0 GHz
GOLDMOS™ Field Effect Transistor
Description
The PTF 10009 is an 85 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 50% efficiency and
13.0 dB of gain. Nitride surface passivation and full gold metallization
are used to ensure excellent device lifetime and reliability.
•
Performance at 960 MHz, 28 Volts
- Output Power = 85 Watts
- Power Gain = 13.0 dB Typ
- Efficiency = 50% Typ
•
Full Gold Metallization
•
Silicon Nitride Passivated
•
Excellent Thermal Stability
•
100% lot traceability
Typical Output Power and Efficiency vs. Input Power
100
80
Output Power (W)
72
80
70
64
56
60
48
Efficiency (%)
50
40
40
32
VDS = 28 V
30
20
24
16
IDQ = 600 mA Total
f = 960 MHz
10
Efficiency
Output Power
90
1000
1234
5697
9
44
8
0
0
0.0
1.0
2.0
3.0
4.0
5.0
Input Power (Watts)
Package 20230
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage (1)
VDSS
65
Vdc
Gate-Source Voltage (1)
VGS
±20
Vdc
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
270
Watts
1.54
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
-65 to 150
°C
Thermal Resistance (TCASE = 70°C)
RqJC
0.65
°C/W
(1)per side
All published data at TCASE = 25°C unless otherwise indicated.
e
1
e
PTF 10009
Electrical Characteristics
Characteristic (per side)
(100% Tested—characteristics, conditions and limits shown per side)
Conditions
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA
Symbol
Min
Typ
Max
Units
V(BR)DSS
65
—
—
Volts
Drain-Source Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
mA
Gate Threshold Voltage
VDS = 10 V, ID = 75 mA
VGS(th)
3.0
—
5.0
Volts
Forward Transconductance
VDS = 10 V, ID = 3 A
gfs
—
2.8
—
Siemens
Symbol
Min
Typ
Max
Units
Input Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Ciss
—
90
—
pF
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Coss
—
36
—
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Crss
—
1.9
—
pF
Symbol
Min
Typ
Max
Units
Gain
(VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz)
Gps
12.0
13.0
—
dB
Drain Efficiency
(VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz)
h
47
50
—
%
Y
—
—
5:1
—
Dynamic Characteristics
Characteristic (per side)
RF Specifications (100% Tested)
Characteristic
Load Mismatch Tolerance
(VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz—
all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VDD = 28 V, Pout = 85 W, IDQ = 600 mA)
Z Source
D
Z Load
S
G
G
D
Z Source W
Frequency
Z Load W
MHz
R
jX
R
jX
860
1.76
-0.78
5.00
-1.50
900
1.80
-0.05
4.80
-0.78
960
1.58
0.69
4.24
0.36
1000
1.39
1.35
3.95
1.41
2
Z0 = 50 W
e
PTF 10009
Typical Performance
Intermodulation Distortion vs. Output Power
Gain vs. Power Output
-10
20.0
VDS = 28V
17.5
-30
12.5
-50
5.0
0
20
40
60
80
-60
100
0
20
Output Power (Watts)
40
60
80
100
Output Power (Watts-PEP)
Gain vs. Frequency
Output Power vs. Drain-Source Voltage
(as measured in a broadband circuit)
100
14
95
90
13
Gain (dB)
85
80
75
IDQ = 600 mA Total
f = 960 MHz
70
22
24
26
28
30
32
12
VDS = 28 V
IDQ = 600 mA Total
Pout = 85 W
11
65
10
900
34
910
920
Bias Voltage vs. Temperature
1.03
Voltage normalized to 1.0 V
Series show current (A)
1.02
1.01
1.00
0.43
0.99
1.25
0.98
2.08
0.97
2.9
3.71
0.96
4.53
0.95
-20
930
940
Frequency (MHz)
Drain-Source Voltage (Volts)
Bias Voltage (V)
Output Power (Watts)
5th
7th
IDQ = 600mA Total
f = 960 MHz
7.5
f2 = 960.1 MHz
-40
VDS = 28 V
10.0
3rd Order
f1 = 960.0 MHz
IMD (dBc)
15.0
Gain (dB)
IDQ = 600 mA Total
-20
30
80
Temp. (°C)
3
130
950
960
e
PTF 10009
Typical Scattering Parameters
(VDS = 28 V, ID = 1.0 A per side)
f
(MHz)
Mag
S11
Ang
Mag
S21
Ang
Mag
S12
Ang
Mag
Ang
40
60
80
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
0.883
0.878
0.876
0.884
0.904
0.915
0.934
0.947
0.962
0.975
0.974
0.977
0.979
0.985
0.981
0.980
0.975
0.973
0.972
0.969
0.966
0.969
0.969
0.970
0.970
0.970
0.971
0.971
0.973
0.973
0.972
0.965
-153
-160
-163
-164
-165
-165
-164
-164
-163
-163
-163
-163
-164
-164
-165
-166
-167
-168
-170
-171
-173
-174
-176
-177
-178
-179
180
179
179
179
179
179
33.0
21.8
16.1
12.8
8.21
5.67
4.36
3.41
2.78
2.30
1.90
1.65
1.44
1.28
1.14
1.01
0.924
0.809
0.749
0.656
0.609
0.564
0.526
0.450
0.405
0.383
0.351
0.330
0.308
0.255
0.219
0.210
93
85
80
76
65
58
51
45
41
36
33
30
27
26
22
21
19
16
14
12
14
8
3
6
1
4
-5
-5
-5
-3
5
-8
0.014
0.013
0.012
0.012
0.011
0.010
0.010
0.010
0.008
0.008
0.006
0.006
0.005
0.004
0.003
0.004
0.003
0.001
0.003
0.003
0.002
0.003
0.004
0.004
0.005
0.005
0.005
0.005
0.005
0.006
0.006
0.006
3
1
-6
-13
-18
-23
-31
-31
-28
-33
-36
-52
-46
-53
-27
-18
-13
14
-1
30
53
59
56
69
57
65
56
61
52
59
58
62
0.527
0.533
0.553
0.574
0.638
0.694
0.769
0.792
0.837
0.873
0.874
0.912
0.916
0.925
0.933
0.933
0.936
0.946
0.939
0.946
0.948
0.945
0.949
0.955
0.953
0.952
0.959
0.957
0.963
0.965
0.965
0.957
-143
-148
-150
-148
-148
-149
-148
-149
-150
-151
-151
-152
-154
-154
-156
-157
-158
-160
-160
-162
-164
-164
-167
-167
-168
-169
-170
-170
-171
-171
-171
-172
4
S22
e
PTF 10009
Test Circuit
Schematic for f = 960 MHz
DUT
C1-2, C5-6, C9, C12-13, C17
C3
C4
C7, C10
C8, C11, C14, C18
C15, C16, C19, C20
L1. L2
R1, R2, R4, R5
R3, R6
l1, l22
10009
33 pF, Capacitor ATC 100 B
11 pF, Capacitor ATC 100 B
6.0 pF, Variable Capacitor, JMC 5701
10 mF, +10 V Electrolytic Capacitor
0.01 mF, Capacitor ATC 100 B
10 mF, +30 V Electrolytic Capacitor
4 Turn, #20 AWG, .120” I.D.
1.0 K, W Resistor
5.1 K, 1/4 W Resistor
50 W, .030 l
Parts Layout (not to scale)
5
l2, l21
l3, l20
l4, l19
l5, l6
l7, l10
l8, l9
l11, l12
l13, l14
l15, l16
l17, l18
Circuit Board
20 W, .080 l
32 W, .191 l
25 W, .500 l
25 W, .091 l
7 W, .056 l
13.0 W, .017 l
13.0 W, .017 l
7.0 W, .064 l
10.0 W, .029 l
19.0 W, .028 l
.031" Dielectric Thickness, er = 4.0,
AlliedSignal, G200, 2 oz. copper
e
PTF 10009
Artwork (1 inch
)
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
6
Specifications subject to change without notice.
LF
© 1997 Ericsson Inc.
EUS/KR 1301-PTF 10009 Uen Rev. B 02-16-00