PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is rated at 30 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 1.5 GHz, 28 Volts - Output Power = 30 Watts Min - Power Gain = 13 dB Typ - Efficiency = 48% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power Output Power (Watts) 40 30 100 21 20 A-1 234 569 813 VDD = 28 V 10 IDQ = 360 mA f = 1.5 GHz 0 0 1 2 3 4 5 Input Power (Watts) Package 20237 RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VDD = 28 V, POUT = 10 W, IDQ = 360 mA, f = 1.5 GHz) Gps 11.0 13.0 — dB Power Output at 1 dB Compressed (VDD = 28 V, POUT = 30 W, IDQ = 360 mA, f = 1.5 GHz) P-1dB 30 — — Watts Drain Efficiency (VDD = 28 V, POUT = 30 W, IDQ = 360 mA, f = 1.5 GHz) h 45 48 — % Y — — 10:1 — Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W(PEP), IDQ = 360 mA, f = 1.5 GHz— all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10021 Electrical Characteristics Characteristic (100% Tested) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Symbol Min Typ Max Units V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs — 2.2 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation at PD 105 Watts 0.6 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 1.65 °C/W Gain Output Power (W) 13 12 11 14 50 12 40 30 Gain (dB) VDD = 28 V 10 1300 1400 1500 1600 10 8 50 Efficiency (%) VDD = 28 V Return Loss (dB) 6 10 1700 4 1400 Frequency (MHz) -15 20 -25 10 1450 1500 1550 Frequency (MHz) 2 40 - 30 5 IDQ = 360 mA POUT = 10 W 20 IDQ = 360 mA 60 Gain (dB) -35 0 1600 Return Loss (dB) Efficiency (%) 14 60 Gain (dB) 15 Broadband Test Fixture Performance Output Power & Efficiency Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Efficiency (%) Typical Performance e PTF 10021 Output Power vs. Supply Voltage Power Gain vs. Output Power 16 15 Power Gain (dB) 35 IDQ = 360 mA f = 1.5 GHz 30 VDD = 28 V f = 1.5 GHz IDQ = 360 mA 14 13 IDQ = 180 mA 12 IDQ = 90 mA 11 10 9 25 22 24 26 28 30 32 0.1 34 1.0 Supply Voltage (Volts) Intermodulation Distortion vs. Output Power -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 100.0 Capacitance vs. Supply Voltage * 120 VDD = 28 V IDQ = 360 mA Cds and Cgs (pF) 3rd Order f1 = 1.499 GHz IMD (dBc) 10.0 Output Power (Watts) f2 = 1.500 GHz 5th 7th 10 VGS =0 V f = 1 MHz 100 8 80 6 Cgs Cds 60 4 40 20 2 Crss 0 5 10 15 20 25 30 35 0 0 40 Output Power (Watts-PEP) 10 20 30 40 Supply Voltage (Volts) Bias Voltage vs. Temperature 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 Bias Voltage (V) 0 Crss (pF) Output Power (Watts) 40 1.01 0.3 1.00 0.87 0.99 1.44 2.01 0.98 2.58 0.97 3.15 0.96 -20 30 80 130 Temp. (°C) *This part is internally matched. Measurements of the finished product will not yield these figures. 3 e PTF 10021 Impedance Data VDD = 28 V, POUT = 30 W, IDQ = 360 mA D Z Source Z Load Z0 = 10 W G S Z Source W Frequency Z Load W GHz R jX R jX 1.30 7.70 -8.77 3.08 -6.77 1.40 7.90 -9.30 3.32 -5.89 1.45 8.30 -10.52 3.45 -5.00 1.50 11.60 -10.60 3.50 -4.50 1.55 13.30 -7.30 3.80 -4.90 1.60 12.90 -5.70 3.70 -6.00 1.70 10.50 -2.07 3.30 -7.16 Typical Scattering Parameters (VDS = 28 V, ID = 900 mA) f (MHz) S11 S21 S12 Mag Ang Mag Ang Mag Ang Mag Ang 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 0.938 0.949 0.988 0.993 0.993 0.991 0.990 0.993 0.998 0.999 1.000 0.996 0.898 0.590 0.443 0.655 0.747 0.831 0.904 0.944 0.966 0.990 -150.8 -156.9 -169.3 -174.7 -178.1 179.0 176.6 174.3 171.7 168.6 164.8 158.8 145.7 144.7 171.8 -175.3 -176.7 -178.1 178.4 174.2 170.6 167.3 4.529 3.199 0.825 0.325 0.108 0.047 0.154 0.262 0.393 0.586 0.927 1.662 3.504 4.350 4.857 3.876 2.729 1.930 1.315 0.897 0.641 0.491 35.0 31.9 12.0 5.8 9.3 127.9 150.5 149.2 145.6 140.5 132.9 120.1 84.7 30.7 -15.9 -68.4 -102.8 -132.0 -155.7 -172.8 175.3 166.2 0.0012 0.0021 0.0046 0.0068 0.0093 0.0123 0.0150 0.0177 0.0212 0.0257 0.0312 0.0383 0.0521 0.0454 0.0316 0.0090 0.0119 0.0190 0.0263 0.0303 0.0299 0.0283 84.1 92.3 95.2 92.8 90.5 86.2 81.9 77.9 74.6 69.1 61.2 51.9 27.0 -12.0 -57.1 -146.3 113.0 88.8 74.8 60.6 49.6 50.1 0.813 0.839 0.893 0.929 0.943 0.981 1.000 0.947 0.915 0.883 0.874 0.846 0.632 0.259 0.472 0.817 0.853 0.855 0.859 0.861 0.860 0.877 -162. -166. -172. -176. -179. 177.7 172.2 167.8 165.2 162.8 159.9 152.3 135.8 160.0 -156. -170. 179.6 174.9 171.6 168.7 166.2 163.7 4 S22 e PTF 10021 Test Circuit Schematic for f = 1.5 GHz C7 0.1 uF C8 33 pF C9 0.1 uF C10 10 uF L1 2.7 nH L2 R1 220 W R2 220 W R3 2 KW R4 470 W R5 2.2 W Circuit Board Circuit Board Placement Diagram (not to scale) Q1 l1 l2 l3 l4 l5 l6 C1 C2 C3 C4, C5 C6 PTF 10021 0.11 l 1.5 GHz 0.0483 l 1.5 GHz 0.07 l 1.5 GHz 0.0853 l 1.5 GHz 0.07 l 1.5 GHz 0.25 l 1.5 GHz 33 pF 1.3 pF 0.7 pF 33 pF 10 uF Field Effect Transistor Microstrip 30.21 W Microstrip 11.69 W Microstrip 70 W Microstrip 11.69 W Microstrip 21 W Microstrip 70 W Chip Cap ATC 100 B Chip Cap ATC 100 B Chip Cap ATC 100 B Chip Cap ATC 100 B SMT Tantalum 5 Chip Cap Chip Cap ATC 100 B Chip Cap SMT Tantalum SMT Coil 4mm Ferrite Bead K 1206 SMT K 1206 SMT SMT Pot K 1206 SMT K 1206 SMt .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper e PTF 10021 Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 1997 Ericsson Inc. EUS/KR 1301-PTF 10021 Uen Rev. A 11-23-98