ERICSSON PTF10031

PTF 10031
50 Watts, 1.0 GHz
GOLDMOS™ Field Effect Transistor
Description
The PTF 10031 is a 50 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0
dB of gain. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
•
Performance at 960 MHz, 28 Volts
- Output Power = 50 Watts
- Power Gain = 13.0 dB Typ
- Efficiency = 55% Typ
•
•
•
•
•
•
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
Back Side Common Source
Available in Package 20235 as PTF 10015
100% Lot Traceability
70
90
60
80
Output Power (W)
50
A -1 2
70
Efficiency (%)
40
60
30
50
20
VDD = 28 V
40
10
IDQ = 350 mA
f = 960 MHz
30
0
1
2
3
3456
9744
100
15
A-1
Package
20235
20
0
Package
20222
1003
1
Efficiency
Output Power
Typical Power Out & Efficiency vs. Power In
4
234
561
970
Input Power (Watts)
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation TCASE = 25°C
PD
175
Watts
1.0
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
-65 to 150
°C
Thermal Resistance (TCASE = 70°C)
RqJC
1.0
°C/W
All published data at TCASE = 25°C unless otherwise indicated.
e
1
e
PTF 10031
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 25 mA
V(BR)DSS
65
—
—
Volts
Drain-Source Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
mA
Gate Threshold Voltage
VDS = 10 V, ID = 75 mA
VGS(th)
3.0
—
5.0
Volts
Forward Transconductance
VDS = 10 V, ID = 3 A
gfs
—
2.8
—
Siemens
Symbol
Min
Typ
Max
Units
Gps
12.0
13.0
—
dB
P-1dB
50
55
—
Watts
h
50
55
—
%
Y
—
—
10:1
—
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain
(VDD = 28 V, POUT = 50 W, IDQ = 350 mA, f = 960 MHz)
Power Output at 1 dB Compression
(VDD = 28 V, IDQ = 350 mA, f = 960 MHz)
Drain Efficiency
(VDD = 28 V, POUT = 50 W, IDQ = 350 mA, f = 960 MHz)
Load Mismatch Tolerance
(VDD = 28 V, POUT = 50 W, IDQ = 350 mA, f = 960 MHz—
all phase angles at frequency of test)
Typical Performance
Intermodulation Distortion vs. Power Output
Gain vs. Power Output
-15
16
VDD = 28 V
15
f1 = 950.000 MHz
14
IMD (dB)
Gain (dB)
3rd Order
IDQ = 350 mA
-25
13
12
VDD = 28 V
11
IDQ = 350 mA
f = 960 MHz
10
20
5th
-45
7th
10
0
f2 = 950.100 MHz
-35
30
40
50
60
-55
70
0
Power Output (Watts)
10
20
30
40
50
Output Power (Watts PEP)
2
60
70
e
PTF 10031
Output Power vs. Supply Voltage
Gain vs. Frequency
60
(circuit optimized at 960 M Hz)
55
14
Gain (dB)
Output Power (Watts)
15
50
IDQ = 350 mA
f = 960 MHz
45
13
VDD = 28 V
IDQ = 350 m A
12
P O UT = 50 W
11
40
22
24
26
28
30
32
950
34
960
Drain-Source Voltage (Volts)
16
1.02
14
1.01
100
12
80
10
60
8
Cds
40
Bias Voltage (V)
Cds & Cgs (pF)
Cgs
120
18
1.03
Crss (pF)
VGS = 0 V
f = 1 MHz
140
6
Crss
20
4
0
10
20
30
990
1000
Voltage normalized to 1.0 V
Series show current (A)
1.00
0.43
0.99
1.25
0.98
2.08
0.97
2.9
3.71
0.96
2
0
980
Bias Voltage vs. Temperature
Capacitance vs. Supply Voltage
160
970
Fre que ncy (M Hz)
4.53
0.95
40
-20
Supply Voltage (Volts)
5
30
55
Temp. (°C)
80
105
Impedance Data (circuit optimized at 960 MHz)
VDD = 28 V, POUT = 50 W, IDQ = 350 mA
D
Z Source
Z Load
G
S
Z0 = 50 W
Z Source W
Frequency
Z Load W
MHz
R
jX
R
jX
850
1.38
-1.22
2.50
1.00
900
1.20
-0.44
2.45
1.65
950
1.08
+0.67
2.40
2.33
1000
0.96
+1.30
2.40
2.90
3
e
PTF 10031
Typical Scattering Parameters
(VDS = 28 V, ID = 1.0 A)
f
(MHz)
Mag
S11
Ang
Mag
S21
Ang
Mag
S12
Ang
Mag
Ang
40
60
80
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
0.883
0.878
0.876
0.884
0.904
0.915
0.934
0.947
0.962
0.975
0.974
0.977
0.979
0.985
0.981
0.980
0.975
0.973
0.972
0.969
0.966
0.969
0.969
0.970
0.970
0.970
0.971
0.971
0.973
0.973
0.972
0.965
-153
-160
-163
-164
-165
-165
-164
-164
-163
-163
-163
-163
-164
-164
-165
-166
-167
-168
-170
-171
-173
-174
-176
-177
-178
-179
180
179
179
179
179
179
33.0
21.8
16.1
12.8
8.21
5.67
4.36
3.41
2.78
2.30
1.90
1.65
1.44
1.28
1.14
1.01
0.924
0.809
0.749
0.656
0.609
0.564
0.526
0.450
0.405
0.383
0.351
0.330
0.308
0.255
0.219
0.210
93
85
80
76
65
58
51
45
41
36
33
30
27
26
22
21
19
16
14
12
14
8
3
6
1
4
-5
-5
-5
-3
5
-8
0.014
0.013
0.012
0.012
0.011
0.010
0.010
0.010
0.008
0.008
0.006
0.006
0.005
0.004
0.003
0.004
0.003
0.001
0.003
0.003
0.002
0.003
0.004
0.004
0.005
0.005
0.005
0.005
0.005
0.006
0.006
0.006
3
1
-6
-13
-18
-23
-31
-31
-28
-33
-36
-52
-46
-53
-27
-18
-13
14
-1
30
53
59
56
69
57
65
56
61
52
59
58
62
0.527
0.533
0.553
0.574
0.638
0.694
0.769
0.792
0.837
0.873
0.874
0.912
0.916
0.925
0.933
0.933
0.936
0.946
0.939
0.946
0.948
0.945
0.949
0.955
0.953
0.952
0.959
0.957
0.963
0.965
0.965
0.957
-143
-148
-150
-148
-148
-149
-148
-149
-150
-151
-151
-152
-154
-154
-156
-157
-158
-160
-160
-162
-164
-164
-167
-167
-168
-169
-170
-170
-171
-171
-171
-172
4
S22
e
PTF 10031
Test Circuit
Z1 = 50W
Z2 = 6.3W
lo = .230
Z3 = 11.0W
lo = .225
Test Circuit Schematic for f = 960 MHz
DUT
C1, C10
C2, C9
C3
C4
C5, C6
C7
C8
L1
R1, R2
R3
Circuit Board
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4 Turn, #20 AWG, .120” I.D.
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.028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz.
copper
Placement Diagram
5
Z4 = 50W
e
PTF 10031
Test Circuit
Artwork (1 inch
)
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
6
Specifications subject to change without notice.
LF
© 1997 Ericsson Inc.
EUS/KR 1301-PTF 10031 Uen Rev. B 12-14-98