PTF 10053 12 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 12 Watts Min - Power Gain = 12 dB Typ • Full Gold Metallization • Silicon Nitride Passivated • Back Side Common Source • Excellent Thermal Stability • 100% Lot Traceability Typical Output Power & Efficiency vs. Input Power 50 Efficiency 14 45 12 40 10 35 Output Power 8 30 6 25 VDD = 26 V 4 20 IDQ = 155 mA f = 2.0 GHz 2 Efficiency (%) X Output Power (Watts) 16 100 2 3 4 53 569 A-1 911 15 0 10 0.0 0.5 1.0 1.5 2.0 Package 20244 Input Power (Watts) RF Specifications (100% Tested) Characteristic Gain (VDD = 26 V, POUT = 3 W, IDQ = 155 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 155 mA, f = 1.99 GHz) Drain Efficiency (VDD = 26 V, POUT = 12 W, IDQ = 155 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 12 W, IDQ = 155 mA, f = 1.99 GHz —all phase angles at frequency of test) Symbol Min Typ Max Units Gps 10 12 — dB P-1dB 12 — — Watts hD 40 — — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10053 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 50 mA V(BR)DSS 65 — — Volts Zero Gate Voltage Drain Current VDS = 26 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 2 A gfs — 0.8 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 58 Watts 0.33 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 3.0 °C/W Typical Performance 12 50 14 Efficiency (%) 13 45 40 VDD = 26 V 12 IDQ = 155 mA 11 1800 30 1850 1900 1950 2000 10 40 Efficiency (%) 8 VDD = 26 V 6 IDQ = 155 mA Pout = 10 W 4 25 Gain (dB) 9 1750 35 50 Gain (dB) 20 2050 2 1925 Frequency (MHz) 30 0 20 -10 Return Loss 1950 1975 Frequency (MHz) 2 -20 10 -30 0 2000 Return Loss (dB) X 15 10 60 55 Output Power (W) Gain (dB) 16 Efficiency (%) X Gain (dB) and Output Power (W) 14 Efficiency (%) Broadband Test Fixture Performance POUT, Gain & Efficiency (at P-1dB) vs. Frequency e PTF 10053 Power Gain vs. Output Power Output Power vs. Supply Voltage 13 18 Output Power (Watts) Power Gain (dB) 12 IDQ = 180 mA 11 10 IDQ = 90 mA 9 IDQ = 45 mA VDD = 26 V f = 2.0 GHz 8 7 16 14 IDQ = 155 mA f = 2.0 GHz 12 10 0 1 10 100 22 24 Output Power (Watts) 26 28 30 Supply Voltage (Volts) 3rd Order IMD vs. Output Power Capacitance vs. Supply Voltage -20 50 3.5 -40 VDD = 26 V IDQ = 155 mA -50 f1 = 2000.0 MHz 3.0 40 Cgs 35 2.5 30 25 Cds 20 VGS =0 V f = 1 MHz 2.0 1.5 15 10 1.0 Crss 5 f2 = 2000.1 MHz 0 -60 0 2 4 6 8 10 0.5 0 12 10 Output Power (Watts-PEP) 20 Voltage nomalized to 1.0 V Series show current (A) 1.02 1.01 1.00 0.99 0.98 0.97 0.075 0.2875 0.96 0.5 0.7125 0.95 0.925 1.1375 0.94 -20 30 Supply Voltage (Volts) Bias Voltage vs. Temperature 1.03 Bias Voltage (V) IMD (dBc) -30 0 20 40 Temp. (°C) 3 60 80 100 40 Crss (pF) Cds and Cgs (pF) 45 e PTF 10053 Impedance Data D VDD = 26 V, POUT = 12 W, IDQ = 155 mA Z Source Z0 = 50 W Z Load G S Z Source W Frequency Z Load W GHz R jX R jX 1.75 2.70 -4.0 3.3 -2.5 1.80 2.60 -4.2 3.5 -2.9 1.85 2.50 -4.4 3.7 -2.9 1.90 2.30 -4.8 3.9 -2.7 1.95 2.25 -5.0 3.3 -2.7 2.00 2.20 -5.4 3.1 -2.9 2.05 2.20 -5.8 3.3 -3.1 Typical Scattering Parameters (VDS = 26 V, ID = 500 mA) f (MHz) S11 S21 Mag Ang 100 0.806 -117 200 0.800 300 400 Mag S12 S22 Ang Mag Ang Mag Ang 25.9 103 0.012 12 0.578 -80 -127 21.1 96 0.012 4 0.577 -90 0.850 -149 12.1 69 0.011 -15 0.650 -113 0.878 -158 8.19 54 0.010 -25 0.729 -125 500 0.900 -163 5.94 43 0.008 -31 0.791 -134 600 0.914 -168 4.49 33 0.006 -35 0.851 -142 700 0.925 -171 3.46 25 0.004 -31 0.888 -150 800 0.932 -174 2.73 18 0.003 -16 0.896 -156 900 0.941 -177 2.20 12 0.002 16 0.909 -160 1000 0.947 -180 1.81 6 0.003 52 0.915 -164 1100 0.957 178 1.52 1 0.004 66 0.933 -167 1200 0.961 176 1.29 -4 0.005 73 0.944 -170 1300 0.963 173 1.11 -9 0.006 74 0.953 -173 1400 0.963 171 0.957 -14 0.007 75 0.959 -176 1500 0.963 170 0.839 -19 0.008 75 0.963 -178 1600 0.964 168 0.741 -23 0.009 75 0.964 179 1700 0.968 166 0.664 -27 0.010 75 0.968 177 1800 0.972 165 0.600 -31 0.011 74 0.972 175 1900 0.976 163 0.546 -36 0.012 72 0.974 173 2000 0.978 161 0.499 -40 0.013 71 0.976 171 2100 0.976 159 0.460 -44 0.014 69 0.975 169 2200 0.975 157 0.427 -48 0.015 67 0.977 167 4 e PTF 10053 Test Circuit Schematic for f = 1.990 GHz DUT l1 l2 l3 l4 l5 l6 l7 l8 C1 PTF 10053 RF Transistor 0.312 l 1.990 GHz Microstrip 46.6 W 0.161 l 1.990 GHz Microstrip 46.6 W 0.312 l 1.990 GHz Microstrip 46.6 W 0.248 l 1.990 GHz Microstrip 46.6 W 0.118 l 1.990 GHz Microstrip 9.42 W 0.177 l 1.990 GHz Microstrip 8.92 W 0.129 l 1.990 GHz Microstrip 46.6 W 0.312 l 1.990 GHz Microstrip 46.6 W Capacitor, Variable, .3-3.5 pF JACO JMC5701 C2, C5, C6, C7, C8 Capacitor, 33 pF 100B 330 C3 Capacitor, 0.9 pF 100B R9 C4 Capacitor, 3.0 pF 100B 3R0 C9 C10 C11 J1, J2 L4 L2, L3 L1 R1, R2 Circuit Board Assembly Diagram (not to scale) 5 Capacitor, 0.1 µF Digi-Key P4525-ND Capacitor, 1.7 pF 100B 2R0 Capacitor, 10 µF, 35V Digi-Key PCS6106-ND Connector, SMA, Female, Panel Mount Ericsson, #RPM 513 412/53 Ferrite, 6 mm Phillips 53/3/4.6-452 4 Turns, 22 AWG, .120 DIA I.D. Inductor, 22 AWG Buss Wire Resistor, 220 W, 1/4W Digi-Key 220QBK-ND TMM4, .030" Dielectric Thickness, 2 oz. copper, er = 4.5, Rogers e PTF 10053 Artwork (not to scale) Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 1998, 2000 Ericsson Inc. EUS/KR 1522-PTF 10053 Uen Rev. B 12-13-00