ERICSSON PTF10160

PTF 10160
85 Watts, 860–960 MHz
GOLDMOS ® Field Effect Transistor
Description
•
•
The PTF 10160 is an internally matched 85–watt GOLDMOS FET
intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability.
•
•
•
•
INTERNALLY MATCHED
Performance at 960 MHz, 26 Volts
- Output Power = 85 Watts
- Power Gain = 16 dB Typ
- Efficiency = 53% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power& Efficiency vs. Input Power
120
70
60
Efficiency
50
80
40
VDD = 26 V
60
30
IDQ = 700 mA
f = 960 MHz
40
20
20
Efficiency (%)
Output Power (Watts)
100
1016
0
1234
5600
55A
10
Output Power
0
0
0
1
2
3
4
5
Package 20248
Input Power (Watts)
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz)
Power Output at 1 dB Compression
(VDD = 26 V, IDQ = 700 mA, f = 960 MHz)
Drain Efficiency
(VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz)
Load Mismatch Tolerance
(VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz
—all phase angles at frequency of test)
Symbol
Min
Typ
Max
Units
Gpe
15
16
—
dB
P-1dB
85
90
—
Watts
h
50
53
—
%
Y
—
—
5:1
—
All published data at TCASE = 25°C unless otherwise indicated.
e
1
e
PTF 10160
Electrical Characteristics
Characteristic
(100% Tested)
Conditions
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA
Symbol
Min
Typ
Max
Units
V(BR)DSS
65
—
—
Volts
Drain-Source Leakage Current
VDS = 26 V, VGS = 0 V
IDSS
—
—
1.0
mA
Gate Threshold Voltage
VDS = 10 V, ID = 75 mA
VGS(th)
3.0
—
5.0
Volts
Forward Transconductance
VDS = 10 V, ID = 3 A
gfs
—
3.0
—
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
205
Watts
1.18
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C)
RqJC
0.85
°C/W
100
16
90
15
Gain (dB)
VDD = 26.0 V
80
IDQ = 700 mA
13
12
70
Efficiency (%)
11
10
860
880
900
920
940
60
50
960
Efficiency (%)
50
16
Gain
Gain (dB)
Output Power (W)
Output Power & Efficiency
17
Gain
60
110
18
14
Broadband Test Fixture Performance
20
40
VDD = 26 V
12
030
IDQ = 700 mA
POUT = 85 W
-205
8
-15
10
Return Loss
4
860
Frequency (MHz)
865
870
875
880
885
Frequency (MHz)
2
890
895
-20
0
900
Return Loss (dB)
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
Efficiency (%)
Typical Performance
e
PTF 10160
Efficiency (%)
50
16
Gain (dB)
Gain
12
VDD = 26 V
40
IDQ = 700 mA
-305
POUT = 85 W
20
-15
8
Return Loss
4
920
925
930
935
940
945
950
10
-25
0
-35
960
955
Power Gain vs. Output Power
17
IDQ = 700 mA
Power Gain (dB)
60
Return Loss (dB) Efficiency (%)
Broadband Test Fixture Performance
20
16
IDQ
IDQ
= =350
400mA
m
15
IDQ = 175 mA
14
VDD = 28 V
f = 960 MHz
13
1
10
Frequency (MHz)
100
1000
Output Power (Watts)
Intermodulation Distortion vs. Output Power
Output Power vs. Supply Voltage
(as measured in a broadband circuit)
100
90
VDD = 26 V, IDQ = 700 mA
-20
f1 = 960 MHz, f2 = 960.1 MHz
80
IMD (dBc)
Output Power (Watts)
-10
70
IDQ = 700 mA
f = 960 MHz
60
-30
5th
-40
7th
50
-50
40
-60
22
24
26
28
30
32
0
300
VGS = 0 V
f = 1 MHz
10
Cds
Bias Voltage (V)
150
Crss (pF)
15
5
50
0
10
20
30
100
1.01
0.86
1.00
2.5
4.16
0.99
5.8
0.98
7.42
9.06
0.97
Crss
0
80
Voltage normalized to 1.0 V
Series show current (A)
1.02
20
Cgs
100
60
1.03
25
200
40
Bias Voltage vs. Temperature
Capacitance vs. Voltage *
250
20
Output Power (Watts-PEP)
Supply Voltage (Volts)
Cds and Cgs (pF)
3rd Order
0
0.96
40
-20
Supply Voltage (Volts)
30
80
Temp. (°C)
* This part is internally matched. Measurements of the
finished product will not yield these figures.
3
130
e
PTF 10160
Spectrum Due to Modulation (Edge Modulation)
Without correction circuit
200 kHz = -36 dBc
400 kHz = -57 dBc
600 kHz = -70 dBc
4
e
PTF 10160
Impedance Data
VDD = 26 V, POUT = 85 W, IDQ = 700 mA
D
Z Source
Z Load
Z0 = 50 W
G
S
Z Source W
Frequency
Z Load W
MHz
R
jX
R
jX
860
2.1
-1.5
2.6
1.1
880
2.6
-1.6
2.6
1.3
900
3
-1.7
2.6
1.5
920
4.1
-1.7
2.4
1.5
940
6.3
-1.5
2.3
1.65
960
7.1
1.5
2.2
1.8
Test Circuit
Test Circuit Schematic for f = 921 to 960 MHz
DUT
l1, l9
l2
l3
l4
l5
l6
l7
l8
l1, l9
PTF 10160
0.037 l
0.120 l
0.080 l
0.187 l
0.204 l
0.250 l
0.031 l
0.157 l
0.037 l
LDMOS Transistor
Microstrip 50 W
Microstrip 50 W
Microstrip 50 W
Microstrip 9.29 W
Microstrip 6.98 W
Microstrip 77.9 W
Microstrip 50 W
Microstrip 50 W
Microstrip 50 W
C1, C3, C4, C8
C2
C5
Digi-Key
C6
Digi-Key
C7
J1, J2
R1, R2, R3
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ATC 100 B
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SMA Panel Mount Female Connector
220 W
Resistor, Digi-Key 1K QBK
Circuit Board
.031" Thickness, e = 4.0,
r
AlliedSignal, G200, 2 oz. copper
5
e
PTF 10160
10160
Components Layout (not to scale)
ERICSSON
10160_A OUTPUT
Artwork (not to scale)
6
e
PTF 10160
Case Outline Specifications
Package 20248
Primary dimensions are inches; alternate dimensions are mm.
Ericsson Inc.
Microelectronics
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
7
Specifications subject to change without notice.
L3
© 1999, 2000, 2001 Ericsson Inc.
EUS/KR 1522-PTF 10160 Uen Rev. A 12-03-00