BSM 15 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 15 GD 120 DN2 BSM 15 GD120DN2E3224 IC Package Ordering Code 1200V 25A ECONOPACK 2 C67076-A2504-A67 1200V 25A ECONOPACK 2K C67070-A2504-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 25 TC = 80 °C 15 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 50 TC = 80 °C 30 Power dissipation per IGBT W Ptot TC = 25 °C 145 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.86 Diode thermal resistance, chip case RthJCD ≤ 1.5 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 + 150 °C -40 ... + 125 K/W sec 40 / 125 / 56 Oct-20-1997 BSM 15 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 0.6 mA 4.5 5.5 6.5 VGE = 15 V, IC = 15 A, Tj = 25 °C - 2.5 3 VGE = 15 V, IC = 15 A, Tj = 125 °C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 0.3 0.5 VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 1.2 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 150 AC Characteristics Transconductance VCE = 20 V, IC = 15 A Input capacitance 5.5 pF - 1000 - - 150 - - 70 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-20-1997 BSM 15 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time ns td(on) VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82 Ω Rise time - 55 110 - 45 90 - 400 600 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Ω Free-Wheel Diode Diode forward voltage V VF IF = 15 A, VGE = 0 V, Tj = 25 °C - 2.4 2.9 IF = 15 A, VGE = 0 V, Tj = 125 °C - 1.9 - Reverse recovery time µs trr IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C Reverse recovery charge - 0.1 µC Qrr IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C - 1 - Tj = 125 °C - 3 - 3 Oct-20-1997 BSM 15 GD 120 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 2 150 t = 11.0µs p W 130 Ptot A 120 IC 110 10 1 100 100 µs 90 80 70 60 1 ms 10 0 50 40 30 10 ms 20 10 0 0 20 40 60 80 100 120 °C 10 -1 0 10 160 10 1 10 DC 3 10 2 TC V VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 26 A K/W 22 IC ZthJC 20 18 10 -1 16 14 D = 0.50 12 0.20 10 10 8 -2 0.10 0.05 6 0.02 single pulse 0.01 4 2 0 0 20 40 60 80 100 120 °C 160 TC 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-20-1997 BSM 15 GD 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 30 30 A A 26 IC 24 22 20 26 17V 15V 13V 11V 9V 7V IC 24 22 20 18 18 16 16 14 14 12 12 10 10 8 8 6 6 4 4 2 0 2 0 0 1 2 3 V 5 0 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 30 A 26 IC 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 V 14 VGE 5 Oct-20-1997 BSM 15 GD 120 DN2 Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 15 A Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 20 V nF VGE 16 C 14 600 V 800 V 10 0 Ciss 12 10 8 Coss 10 -1 6 Crss 4 2 0 0 10 20 30 40 50 60 70 80 10 -2 0 nC 100 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 0.0 0 2 200 400 600 800 1000 1200 V 1600 VCE 6 0 0 200 400 600 800 1000 1200 V 1600 VCE Oct-20-1997 BSM 15 GD 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A 10 3 t 10 3 tdoff ns t tdoff ns tdon 10 2 tr 10 2 tr tdon tf 10 1 0 5 10 15 20 25 30 tf A IC 10 1 0 40 50 100 150 200 Ω 300 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω par.: VCE = 600V, VGE = ± 15 V, IC = 15 A E 10 10 mWs mWs 8 E 7 8 7 Eon 6 6 5 5 4 4 3 3 Eoff 2 2 1 1 0 0 5 10 15 20 25 30 Eon A IC 40 7 0 0 Eoff 50 100 150 200 Ω 300 RG Oct-20-1997 BSM 15 GD 120 DN2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 10 1 30 A K/W 26 IF Diode 24 ZthJC 10 0 22 20 10 -1 18 Tj=125°C 16 Tj=25°C D = 0.50 14 10 -2 12 0.20 0.10 10 8 10 6 -3 0.05 single pulse 0.02 0.01 4 2 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-20-1997 BSM 15 GD 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 180 g 9 Oct-20-1997