FMS2018 Advanced Product Information 1.2 SP7T GaAs Multi-Band GSM – UMTS Antenna Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic Available in die form Suitable for multi-band GSM/DCS/PCS/ EDGE and UMTS applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS power levels Very high Tx-Rx isolation >35dB typ. at 1.8GHz Very high Tx-Tx isolation >30dB typ. at 1.8GHz Very low Tx Insertion loss Very low control current RX1 RX3 RX2 RX4 TX2 VRX1 VTX2 TX1 VRX2 VTX1 VRX3 TX3 VTX3 VRX4 ANT VRXC Description and Applications: The FMS2018 is a low loss, high power and linear single pole seven throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology which offers leading edge performance optimised for switch applications. The FMS2018 is designed for use in dual/tri and quad-band GSM handset antenna switch modules and RF front-end modules. Electrical Specifications: (TAMBIENT = 25°C,Vcontrol = 0V/2.5V, ZIN = ZOUT = 50Ω) Parameter Test Conditions Tx Insertion Loss 0.5 – 1.0 GHz 0.5 dB 1.0 – 2.0 GHz 0.6 dB 0.5 – 1.0 GHz 0.6 dB 1.0 – 2.0 GHz 0.8 dB Return Loss 0.5 – 2.5 GHz 20 dB Isolation 0.5 – 1.0 GHz 40 dB TX-RX 1.0 – 2.0 GHz 35 dB Isolation 0.5 – 1.0 GHz 33 dB TX-TX 1.0 – 2.0 GHz 30 dB 2nd Harmonic Level 1 GHz, Pin = +35 dBm, 100% Duty Cycle -75 dBc 2 GHz, Pin = +33 dBm, 100% Duty Cycle -75 dBc 1 GHz, Pin = +35 dBm, 100% Duty Cycle -75 dBc 2 GHz, Pin = +33 dBm, 100% Duty Cycle -75 dBc Switching speed : Trise, Tfall 10% to 90% RF and 90% to 10% RF < 0.3 µs Ton, Toff 50% control to 90% RF and 50% control to 10% RF < 1.0 µs Rx Insertion Loss 3rd Harmonic Level Min Typ Note: External DC blocking capacitors are required on all RF ports (typ: 100pF) 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com Max Units FMS2018 Advanced Product Information 1.2 Truth Table: VTx1 VTx2 VTx3 VRx1 VRx2 VRx3 VRx4 VM ON PATH High Low Low Low Low Low Low Low ANT-TX1 Low High Low Low Low Low Low Low ANT-TX2 Low Low High Low Low Low Low Low ANT-TX3 Low Low Low High Low Low Low High ANT-RX1 Low Low Low Low High Low Low High ANT-RX2 Low Low Low Low Low High Low High ANT-RX3 Low Low Low Low Low Low High High ANT-RX4 Note: ‘High’ ‘Low’ = +2.5V to +5V = 0V to +0.2V Pad Name Description A ANT Antenna 698, 1167 B Tx1 TX1 RF Output 183, 110 C Tx2 TX2 RF Output 182, 498 D Tx3 TX3 RF Output 184, 1147 E Rx1 RX1 RF Output 1066, 536 F Rx2 RX2 RF Output 1063, 663 G Rx3 RX3 RF Output 1063, 993 H Rx4 RX4 RF Output 1066, 1126 I VTX1 TX1 Control Voltage 693, 102 J VTX2 TX2 Control Voltage 798, 102 K VTX3 TX3 Control Voltage 903, 102 L VRX1 RX1 Control Voltage 995, 633 M V RX2 RX2 Control Voltage 1066, 326 N V RX3 RX3 Control Voltage 1066, 427 O V RX4 RX4 Control Voltage 1008, 102 P VRXC Common Receive Switch 1113, 102 Pad and Die Layout: A D H G S R T F E C M Q L N B I J K O P Pin Coordinates (µm) Pad Control Voltage Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Q GND T1 Ground 1 178, 392 R GND T2 Ground 2 184, 764 S GND T3 Ground 3 184, 877 T GND Rc Ground 4 1066, 771 Die Size (µm) Die Thickness (µm) Min. Bond Pad Pitch(µm) Min. Bond pad opening (µm) 1230 x 1250 100 88 70 x 70 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com Advanced Product Information 1.2 Simulated Performance: TX ON 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com FMS2018 Advanced Product Information 1.2 RX ON 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com FMS2018 Advanced Product Information 1.2 FMS2018 Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25um wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 5 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com