FMS2023 Preliminary Datasheet v2.2 DC–20 GHZ MMIC LOW LOSS SPST ABSORPTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Non-reflective design Low Insertion loss 1 dB at 20 GHz typical Very high isolation 50 dB at 20 GHz typical Excellent low control voltage performance RFout RFin GENERAL DESCRIPTION: The FMS2023 is a low loss high isolation broadband single pole single throw Gallium Arsenide switch designed for use in broadband communications instrumentation and electronic warfare applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology that offers leading edge performance optimised for switch applications. V1 V2 TYPICAL APPLICATIONS: • • • Broadband communications Instrumentation Electronic warfare (ECM, ESM) ELECTRICAL SPECIFICATIONS (based on on-wafer measurements): PARAMETER CONDITIONS MIN TYP MAX UNITS Insertion Loss (DC-10) GHz, Small Signal 0.7 dB Insertion Loss (10-15) GHz, Small Signal 0.8 dB Insertion Loss (15-20) GHz, Small Signal 1 dB Isolation (DC-10) GHz, Small Signal 47 dB Isolation (10-15) GHz, Small Signal 47 dB Isolation (15-20) GHz, Small Signal 50 dB Input Return Loss (on state) (DC-20) GHz, Small Signal 20 dB Output Return Loss (on state) (DC-20) GHz, Small Signal 22 dB Output Return Loss (off state) (DC-20) GHz, Small Signal 12 ns P1dB -5V control 26 dBm Note: TAMBIENT = 25°C, Vctrl = 0V/-5V 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2023 Preliminary Datasheet v2.2 TRUTH TABLE: ABSOLUTE MAXIMUM RATINGS: PARAMETER SYMBOL ABSOLUTE MAXIMUM Max Input Power Pin +38dBm Operating Temp Toper -40°C to +100°C Storage Temp Tstor -55°C to +150°C CONTROL LINE RF PATH V1 V2 RFIN-RFO -5V 0V On (Low Loss) 0V -5V Off (Isolation) Note: -5V ± 0.2V; 0V ± 0.2V Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. PAD LAYOUT: PAD NAME DESCRIPTION PIN COORDINATES (µm) RFIN RFIN 141,587 RFO RFOUT 1789,587 V1 V1 901,161 V2 V2 1101,161 Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening DIE SIZE (µm) DIE THICKNESS (µm) MIN. BOND PAD PITCH (µm) MIN. BOND PAD OPENING (µm x µm ) 1910 x 1110 100 150 116 x 116 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2023 Preliminary Datasheet v2.2 TYPICAL MEASURED PERFORMANCE ON W AFER: Note: Measurement Conditions VCTRL= -5V (low) & 0V (high), TAMBIENT = 25°C unless otherwise stated Isolation (dB) Insertion Loss (dB) 0 0 -10 -20 -0.5 -30 -40 -1 -50 -60 -1.5 -70 -80 -2 1 6 11 Frequency (GHz) 16 1 20 6 Input Return Loss (dB) 11 Frequency (GHz) 16 20 16 20 Output Return Loss (dB) 0 0 ON- STATE OFF-STATE -10 -10 -20 -20 -30 -30 -40 -40 1 6 11 Frequency (GHz) 16 20 1 6 11 Frequency (GHz) 3 Loss(dB) 2.5 10 G Hz 20 G Hz 2 1.5 1 0.5 0 1 5 16 1 7 18 19 2 0 21 2 2 23 2 4 25 2 6 In p u t P o w e r (d B m ) 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2023 Preliminary Datasheet v2.2 PREFERRED ASSEMBLY INSTRUCTIONS: HANDLING PRECAUTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. The back of the die is metallised and the recommended mounting method is by the use of solder or conductive epoxy. If epoxy is selected then it should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available; please contact Filtronic Compound Semiconductors Ltd. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire be used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. ORDERING INFORMATION: PART NUMBER DESCRIPTION FMS2023-000 Die in Waffle-pack (Gel-pak available on request) Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com