2-10GHz MESFET Amplifier Filtronic LMA116 Solid State Features • • • • • • • • • • 4.5dB Typical Noise Figure 15dB Typical Gain 18dBm Saturated Output Power 12dB Input/Output Return Loss Typical 2-10GHz Frequency Bandwidth +8 Volts Single Bias Supply DC Decoupled RF Output Chip Size : 1.62mmX1.62mm (.064”X.064”) Chip Thickness : 100µm 2 Pad Dimension : 100µm Description The Filtronic LMA116 is a GaAs monolithic distributive amplifier which operates from 2 to 10GHz. This amplifier is self biased and four 450µm FETs are used to produce a typical gain of 15dB and a noise figure of 4.5dB. The LMA116 is suitable for gain block, low noise and driver amplifier applications. DC decoupled output RF port. Ground is provided to the circuitry through vias to the backside metallization. Electrical Specifications at Ta=25°C (VDD=+8.0V, Zin=Zout=50Ω) Symbol BW S21 Parameter Operating Bandwidth Small Signal Gain Ids ∆S21 NF RLin RLout S12 P-1dB Drain Operating Current Small Signal Gain Flatness Noise Figure Input Return Loss Output Return Loss Reverse Isolation 1-dB Gain Compression Power Test Conditions VD=8V, VG=3.5V, Rs1=5Ω Min. 2 13 55 @ .5Idss -35 12.5 Limit Typ. Max. 10 Units GHz dB 125 ±1.5 5.5 mA dB dB dB dB dB dBm 15 80 ±1 4.5 -10 -14 -40 15 Absolute Maximum Ratings Symbol Vdd Idd Pin Pt Tch Tstg Tmax. Parameter/Conditions Drain Supply Voltage Total Drain Current RF Input Power Power Dissipation Operating Channel Temperature Storage Temperature Max. Assembly Temp. (1 min. max.) Min. -65 Max. 12 125 24 1.5 150 165 300 Units Volts mA dBm W °C °C °C Notes : 1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. 2. Specifications subject to change without notice. 3. On-chip 5Ω resistor set Ids of 80mA typical. DSS 006 WC Phone: (408) 988-1845 Internet: http://www.FiltronicSolidState.com Fax: (408) 970-9950 2-10GHz MESFET Amplifier Filtronic LMA116 Solid State Assembly Diagram SINGLE VOLTAGE SUPPLY SCHEME Notes: 1.) Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is recommended. Ultrasonic bonding is not recommended. 2.) The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150°C for 45 minutes. 3.) Bond on bond or stitch bond acceptable. 4.) Conductor over conductor acceptable. Conductors must not short. DSS 006 WC Phone: (408) 988-1845 Internet: http://www.FiltronicSolidState.com Fax: (408) 970-9950 2-10GHz MESFET Amplifier Filtronic LMA116 Solid State Assembly Diagram TWO VOLTAGE SUPPLY SCHEME Notes: 1.) Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is recommended. Ultrasonic bonding is not recommended. 2.) The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150°C for 45 minutes. 3.) Bond on bond or stitch bond acceptable. 4.) Conductor over conductor acceptable. Conductors must not short. DSS 006 WC Phone: (408) 988-1845 Internet: http://www.FiltronicSolidState.com Fax: (408) 970-9950 2-10GHz MESFET Amplifier Filtronic LMA116 Solid State Mechanical Outline Notes: 1.) Unless Otherwise specified. 2.) All units are in micron (µm). 3.) All bond pads are 100 X 100 µm2. 4.) Bias pad (VDD) size is 100 X 121.5 µm2. DSS 006 WC Phone: (408) 988-1845 Internet: http://www.FiltronicSolidState.com Fax: (408) 970-9950