FILTRONIC LP6836SOT343

PRELIMINARY DATA SHEET
LP6836SOT343
PACKAGED MEDIUM POWER PHEMT
•
FEATURES
♦ 0.5 dB Noise Figure at 2 GHz
♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz
♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz
♦ 70% Power-Added-Efficiency
•
DESCRIPTION AND APPLICATIONS
The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic
range.
It utilizes a 0.25 µm x 360 µm Schottky barrier gate, defined by electron-beam
photolithography. The LP6836’s active areas are passivated with Si3N4, and the SOT343 (also
known as SC-70) package is ideal for low-cost, high-performance applications that require a surfacemount package.
The LP6836SOT343 is designed for commercial systems for use in low noise amplifiers and
oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it
appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for
WLAN and ISM band spread spectrum applications.
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ELECTRICAL SPECIFICATIONS @ TAmbient = 25°°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Saturated Drain-Source Current
IDSS
VDS = 2 V; VGS = 0 V
80
Power at 1-dB Compression
P-1dB
f=2GHz; VDS = 3 V; IDS = 50% IDSS
18
19
dBm
Power Gain at 1-dB
Compression
G-1dB
f=2GHz; VDS = 3 V; IDS = 50% IDSS
18
20
dB
Power-Added Efficiency
PAE
f=2GHz; VDS = 3 V; IDS = 50% IDSS;
POUT = 19.5 dBm
70
%
Noise Figure
NF
f=2GHz; VDS = 3V; IDS = 25% IDSS
0.5
dB
f=2GHz; VDS = 3V; IDS = 50% IDSS
0.7
dB
100
mS
mA
Transconductance
GM
VDS = 2 V; VGS = 0 V
Gate-Source Leakage Current
IGSO
VGS = -5 V
Pinch-Off Voltage
VP
VDS = 2 V; IDS = 2 mA
-0.25
Gate-Source Breakdown
Voltage Magnitude
|VBDGS|
IGS = 2 mA
11
15
V
Gate-Drain Breakdown
Voltage Magnitude
|VBDGD|
IGD = 2 mA
12
16
V
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
75
125
Units
1
10
µA
-2.0
V
Revised: 1/20/01
Email: [email protected]
PRELIMINARY DATA SHEET
LP6836SOT343
PACKAGED MEDIUM POWER PHEMT
•
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Drain-Source Voltage
VDS
Gate-Source Voltage
Min
Max
Units
TAmbient = 22 ± 3 °C
7
V
VGS
TAmbient = 22 ± 3 °C
-3
V
Drain-Source Current
IDS
TAmbient = 22 ± 3 °C
IDSS
mA
Gate Current
IG
TAmbient = 22 ± 3 °C
5
mA
RF Input Power
PIN
TAmbient = 22 ± 3 °C
60
mW
Channel Operating Temperature
TCH
TAmbient = 22 ± 3 °C
175
ºC
Storage Temperature
TSTG
—
175
ºC
-65
Notes: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent
damage to the device.
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
•
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
•
PACKAGE OUTLINE
(dimensions in mm)
SOURCE
GATE
DRAIN
SOURCE
All information and specifications are subject to change without notice.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/20/01
Email: [email protected]