FMS 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Repetitive peak reverse voltage Peak forward surge current Forward continuous current tp≦1 s Ta=25℃ Type Symbol Value Unit 1N60 VRRM 40 V 1N60P VRRM 45 V 1N60 IFSM 150 mA 1N60P IFSM 500 mA 1N60 IF 30 mA 1N60P IF 50 mA Tstg -65~+125 ℃ Storage temperature range Maximum Thermal Resistance Tj=25℃ Parameter Junction ambient Test Conditions Symbol Value Unit on PC board 50mm×50mm×1.6mm RthJA 250 K/W Formosa MicroSemi CO., LTD. www.formosams.com Rev. 2, 22-Nov-2002 1/2 FMS 1N60/1N60P Electrical Characteristics Tj=25℃ Parameter Forward voltage Reverse current Junction capacitance Reverse recovery time Test Conditions IF=1mA Type Symbol Min Typ Max Unit 1N60 VF 0.32 0.5 V 1N60P VF 0.24 0.5 V IF=30mA 1N60 VF 0.65 1.0 V IF=200mA 1N60P VF 0.65 1.0 V VR=15V 1N60 IR 0.1 0.5 μA 1N60P IR 0.5 1.0 μA VR=1V, f=1MHz 1N60 CJ 2.0 pF VR=10V, f=1MHz 1N60P CJ 6.0 pF IF=IR=1mA Irr=1mA RC=100Ω trr 1.0 ns Dimensions in mm Standard Glass Case JEDEC DO 35 Formosa MicroSemi CO., LTD. www.formosams.com Rev. 2, 22-Nov-2002 2/2