FORMOSA BAV70

Formosa MS
B AV 7 0
Description
The BAV70 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is
designed for high-speed switching application in hybrid thick and thin-film circuits.
Package Dimensions
Style : Pin1.Anode 2. Anode 3. Cathode
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF
.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Reverse Voltage
Forward Current
Repetitive Forward Current
Total Power Dissipation
Characteristics
Symbol
Tj
Tstg
Ratings
+150
-65~+150
80
200
500
225
PD
V
mA
mA
mW
at Ta = 25
Characteristic
Symbol
Min.
Max.
Unit
V(BR)
80
-
V
VF(1)
-
715
mV
IF=1mA
VF(2)
-
855
mV
IF=10mA
VF(3)
-
1100
mV
IF=50mA
VF(4)
-
1300
mV
IF=100mA
Reverse Current
IR
-
Total Capacitance
CT
Reverse Recovery Time
Trr
Reverse Breakdown Voltage
Forward Voltage
Unit
-
Test Conditions
IR=100uA
5
uA
VR=80V
1.5
pF
VR=0, f=1MHz
15
nS
IF=IR=10mA, RL=100
IR=1Ma,VR=5V
measured at
Formosa MS
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of FMS.
FMS reserves the right to make changes to its products without notice.
FMS semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
FMS assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: 5F , No. 208 , Sec 3 , Chung Yang Rd. TuCheng , Taipei Hsien , Taiwan, R. O. C.
TEL : 886-2-2269-6661 FAX : 886-2-2269-6141
China: No. Y Bldg , Zhijiang Hi-tech Park Binjiang Zone , Hangzhou , China
TEL : 86-571-8669-8326 FAX : 86-571-8669-6991