Formosa MS Chip Silicon Rectifier SFM11-M THRU SFM16-M Super fast recovery type Features SOD-123 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. For surface mounted applications. 0.071(1.8) 0.055(1.4) Exceeds environmental standards of MIL-S-19500 / 228 0.110(2.8) 0.094(2.4) Low leakage current. 0.063(1.6) 0.055(1.4) 0.035(0.9) Typ. Mechanical data 0.035(0.9) Typ. Dimensions in inches and (millimeters) Case : Molded plastic, JEDEC SOD123 / MINI SMA Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting Position : Any Weight : 0.04 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol o Forward rectified current Ambient temperature = 50 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25o C VR = VRRM TA = Reverse current MAX. UNIT IO 1.0 A IFSM 30 A 5.0 uA 100 Junction to ambient Diode junction capacitance Rq JA f=1MHz and applied 4vDC reverse voltage TSTG V RRM *1 V RMS (V) (V) *2 VR *3 (V) SFM11-M S1 50 35 50 SFM12-M S2 100 70 100 SFM13-M S3 150 105 150 SFM14-M S4 200 140 200 SFM15-M S5 300 210 300 SFM16-M S6 400 280 400 VF *4 (V) T RR *5 (nS) uA o 42 CJ Storage temperature MARKING CODE TYP. IR VR = VRRM TA = 100o C Thermal resistance SYMBOLS MIN. C / w 10 -55 pF +150 o C Operating temperature ( o C) *1 Repetitive peak reverse voltage *2 RMS voltage 0.95 35 -55 to +150 *3 Continuous reverse voltage *4 Maximum forward voltage 1.25 *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (SFM11-M THRU SFM16-M) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1-TYPICAL FORWARD CHARACTERISTICS 1.0 -M -M ~S FM 16 SF M 15 SF M1 1-M ~S FM 14 .1 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.2 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) Tj=25 C Pulse Width 300us 1% Duty Cycle .01 .6 .8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PEAK FORWARD SURGE CURRENT,(A) .001 .4 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PULSE GENERATOR (NOTE 2) ( ) 30 24 18 Sine Wave 12 JEDEC method 6 1 5 (+) 1W NONINDUCTIVE 8.3ms Single Half Tj=25 C 0 50 10 100 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 70 trr JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) -M AVERAGE FORWARD CURRENT,(A) 10 | | | | | | | | +0.5A 0 -0.25A -1.0A 60 50 40 30 20 10 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100