FORMOSA SM5818

Formosa MS
MELF Schottky Barrier Diodes
SM5817 THRU SM5819
Silicon epitaxial planer type
Features
SM-1
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
.205(5.2)
.190(4.8)
SOLDERABLE
ENDS
.024(.60)
.018(.46)
Exceeds environmental standards of MIL-S-19500 /
228
.105(2.7)
.095(2.4)
Low leakage current.
Dimensions in inches and (millimeters)
Mechanical data
Case : Molded plastic, SM-1 (MELF)
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.015 gram
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
Forward rectified current
See Fig.2
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
25o C
VR = VRRM TA =
Reverse current
MAX.
UNIT
IO
1.0
A
IFSM
25
A
1.0
mA
10
Junction to ambient
Diode junction capacitance
Rq JA
f=1MHz and applied 4vDC reverse voltage
Storage temperature
MARKING
CODE
*1
V RMS
*2
VR
*3
VF
*4
(V)
(V)
(V)
(V)
SM5817
-
20
14
20
0.45
SM5818
-
30
21
30
0.55
SM5819
-
40
28
40
0.60
110
-55
mA
o
80
CJ
TSTG
V RRM
TYP.
IR
VR = VRRM TA = 100o C
Thermal resistance
SYMBOLS
MIN.
C / w
pF
+150
o
C
Operating
temperature
( o C)
*1 Repetitive peak reverse voltage
*2 RMS voltage
-55 to +125
*3 Continuous reverse voltage
*4 Maximum forward voltage
RATING AND CHARACTERISTIC CURVES (SM5817 THRU SM5819)
FIG.1-TYPICAL FORWARD
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
3.0
18
SM
58
17
~S
M
58
19
10
SM
58
1.0
1.2
1.0
0.8
Single Phase
0.6
Half Wave 60Hz
Resistive Or Inductive Load
0.4
0.2
0
0
20
40
Tj=25 C
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
0.1
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
PEAK FORWAARD SURGE CURRENT,(A)
INSTANTANEOUS FORWARD CURRENT,(A)
50
25
20
15
8.3ms Single Half
Tj=25 C
Sine Wave
10
JEDEC method
5
0
1
100
5
50
10
100
FIG.5-TYPICAL JUNCTION CAPACITANCE
10
350
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
NUMBER OF CYCLES AT 60Hz
1.0
Tj=75 C
Tj=25 C
.1
300
250
200
150
100
50
.01
0
0
20
40
60
80
.01
.05
.1
.5
1
100 120 140
PERCENTAGE RATED PEAK REVERSE VOLTAGE
REVERSE VOLTAGE,(V)
5
10
50
100