n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit • Absolute Maximum Ratings ( Tc=25°C) Symbols VCES VGES DC Tc= 25°C IC 25 Collector Current DC Tc=100°C IC 100 1ms Tc= 25°C IC PULSE IGBT Max. Power Dissipation PC FWD Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque Items Collector-Emitter Voltage Gate -Emitter Voltage • Electrical Characteristics Turn-on Time Turn-off Time Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Units V V A W W °C °C Nm ( at Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Switching Time Ratings 600 ± 20 38 20 152 145 75 +150 -40 ∼ +150 50 Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=20mA VGE=15V IC=20A VGE=0V VCE=10V f=1MHz VCC=300V IC=20A VGE=±15V RG=120Ω VCC=300V IC=20A VGE=+15V RG=12Ω IF=20A VGE=0V IF=20A, VGE=-10V, di/dt=100A/µs Min. Symbols Rth(j-c) Rth(j-c) Test Conditions IGBT Diode Min. Typ. 5.5 Max. 1.0 20 8.5 3.0 1300 300 70 Units mA µA V pF 1.2 0.6 1.0 0.35 0.16 0.11 0.30 µs µs 0.35 3.0 300 V ns • Thermal Characteristics Items Thermal Resistance Typ. Max. 0.86 1.66 Units °C/W Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j= 2 5 ° C 60 V GE = 2 0 V , 1 5 V 12V V GE = 2 0 V , 1 5 V 50 12V [A] C 40 Collector Current : I C [A] 50 Collector Current : I T j= 1 2 5 ° C 60 30 10V 20 10 40 30 10V 20 10 8V 8V 0 0 0 1 2 3 4 5 6 0 1 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage vs. Gate-Emitter Voltage 4 5 6 T j= 1 2 5 ° C 12 [V] [V] 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 2 5 ° C 12 2 Collector-Emitter Voltage : V CE [V] 10 CE CE 10 6 IC = 4 40A 20A 2 8 Collector-Emitter Voltage : V Collector-Emitter Voltage : V 8 10A 6 IC = 4 40A 20A 2 10A 0 0 0 5 10 15 20 25 0 Gate-Emitter Voltage : V GE [V] 5 10 15 20 Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current Switching Time vs. Collector Current V CC = 3 0 0 V , R G = 1 2 Ω , V GE= ± 1 5 V , T j= 2 5 ° C V CC = 3 0 0 V , R G = 1 2 Ω , V GE = ± 1 5 V , T j= 1 2 5 ° C 1000 1000 , t r, t off , t f [nsec] t off 100 on t on tf t on 100 Switching Time : t tf Switching Time : t on , t r, t off , t f [nsec] t off tr 10 tr 10 0 10 20 Collector Current : I C [A] 30 0 10 20 Collector Current : I C [A] 30 25 Switching Time vs. R G V CC =300V, I C = 2 0 A , V GE = ± 1 5 V , T j= 1 2 5 ° C , t r, t off , t f [nsec] 1000 t on tf tr Switching Time : t tr tf 100 100 10 10 0 100 0 100 Gate Resistance : R G [ Ω ] Gate Resistance : R G [ Ω ] Capacitance vs. Collector-Emitter Voltage Dynamic Input Characteristics T j= 2 5 ° C T j= 2 5 ° C [V] C ies oes C oes Capacitance : C 25 V C C =200V, 300V, 400V 400 100 C res 10 GE 300 15 200 10 100 5 0 0 5 10 15 20 25 30 0 35 Reverse Recovery Time vs. Forward Current QG 0 120 80 100 [nQ] Reverse Recovery Current vs. Forward Current / dt= 1 0 0 A / µ s e c V R= 2 0 0 V , 8 rr 125°C 150 40 60 Gate Charge : -di / dt = 1 0 0 A / µ s e c 125°C 6 Reverse Recovery Current : I rr [nsec] -di 20 [A] V R= 2 0 0 V , 200 Reverse Recovery Time : t 20 CE 1000 Collector-Emitter Voltage : V , C res , C ies [pF] 500 100 25°C 50 0 4 25°C 2 0 0 5 10 15 20 25 Forward Current : I F [A] 30 35 [V] Switching Time : t t on on on t off t off 1000 0 5 10 15 20 25 Forward Current : I F [A] 30 35 Gate-Emitter Voltage : V , t r, t off , t f [nsec] Switching Time vs. R G V CC =300V, I C = 2 0 A , V GE = ± 1 5 V , T j= 2 5 ° C Typical Short Circuit Capability Reverse Biased Safe Operating Area V CC = 4 0 0 V , R G = 1 2 Ω , T j= 1 2 5 ° C + V GE = 1 5 V , - V GE < 15V, T j<125°C, R G >1 2 Ω 300 50 60 I SC Short Circuit Current : I 20 10 40 150 30 100 20 50 10 0 0 0 100 200 300 400 500 600 5 700 10 15 0 25 20 Gate Voltage : V GE [µs] 200 SC [A] SC [A] C 30 Collector Current : I 50 t SC Short Circuit Time : t 250 40 [V] Collector-Emitter Voltage : V CE [V] Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 350 14 I rr 250 10 200 8 150 6 [A] 12 F Reverse Recovery Time : t 40 30 20 10 0 100 4 t rr 50 2 0 1 2 3 4 5 0 100 200 300 -di Forward Voltage : V F [V] / dt 10 1 FWD 10 0 IGBT 10 -1 -2 10 -4 10 10 -3 10 -2 Pulse Width : P W [sec] 10 -1 10 400 [A/µsec] Transient Thermal Resistance Thermal Resistance : Rth(j-c) [°C/W] 0 0 500 0 600 rr [nsec] rr 300 Reverse Recovery Current : I T j= 1 2 5 ° C , 2 5 ° C 50 [A] / dt I F = 2 0 A , T j= 1 2 5 ° C 60 Forward Current : I -di Switching losses (Eon, Eoff vs. IC) IC [A] Test Circuit Switching waveforms P.O. Box 702708-Dallas, 75370 PhoneTX (972) 233-1589 Fax- (972) (972) 381-9991 233-0481 (fax) www.collmer.com P.O. Box TX 702708 - Dallas, - (972) 733-1700