n Outline Drawing IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Equivalent Circuit n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *1 Ratings 1200 ± 20 100 200 100 200 780 +150 -40 ∼ +125 2500 3.5 3.5 Units V V A W °C °C V Nm Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=100mA VGE=15V IC=100A VGE=0V VCE=10V f=1MHz VCC=600V IC=100A VGE=± 15V RG=9.1Ω IF=100A VGE=0V IF=100A Min. Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. 4.5 16000 5800 5160 0.65 0.25 0.85 0.35 Max. 2.0 30 7.5 3.3 Units mA µA V V pF 1.2 0.6 1.5 0.5 3.0 350 µs V ns • Thermal Characteristics Items Thermal Resistance Typ. 0.025 Max. 0.16 0.33 Units °C/W Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j=25°C T j=125°C 250 250 V GE =20V,15V,12V,10V V GE =20V,15V,12V,10V 200 C C [A] [A] 200 Collector current : I Collector current : I 150 100 8V 50 150 100 8V 50 0 0 0 1 2 3 4 0 5 3 4 5 Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage T j=25°C T j=125°C 10 [V] [V] 10 CE 8 Collector-Emitter voltage V CE 2 Collector-Emitter voltage : V CE [V] Collector-Emitter voltage : V CE [V] Collector-Emitter voltage :V 1 6 IC= 4 200A 100A 2 50A 0 8 6 4 IC= 200A 100A 2 50A 0 0 5 10 15 20 25 0 Gate-Emitter voltage : V GE [V] 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current Switching time vs. Collector current V CC =600V, R G =9.1 Ω , V GE ±15V, T j=25°C V CC =600V, R G =9.1 Ω , V GE =±15V, T j=125°C 1000 t OFF 1000 t ON tf tr ON, t r, t OFF , t f [nsec] tf tr 100 100 Switching time : t Switching time : t ON, t r, t OFF , t f [nsec] t OFF t ON 10 0 50 100 150 Collector current : I C [A] 200 10 0 50 100 150 Collector current : I C [A] 200 Switching Time vs. R G Dynamic Input Characteristics V CC =600V, I C =100A, V GE =±15V, T j=25°C 600V 800 tr tf 100 [V] GE Collector-Emitter Voltage : V 1000 20 800V CE t ON 600 15 400 10 200 5 0 0 10 400 Gate Resistance : R G [ Ω ] 1200 0 800 Gate Charge : Q G [nC] Forward Current vs. Forward Voltage Reverse Recovery Characteristics V GE =0V t rr, I rr vs. I F 250 t rr [A] t rr Forward Current : I 100 50 25°C I rr :t 150 100 Reverse Recovery Time F Reverse Recovery Current : I [A] rr [ns] 125°C 25°C rr T j=125°C 200 0 125°C I rr 25°C 10 0 1 2 3 4 5 0 50 100 150 200 Forward Current : I F [A] Forward Voltage : V F [V] Reversed Biased Safe Operating Area +V GE =15V, -V GE <15V, T j<125°C, R G >9.1 Ω Transient Thermal Resistance 1 [°C/W] 1000 [A] 800 C IGBT 0,1 Collector Current : I Thermal resistance : R th(j-c) Diode 0,01 SCSOA 600 (non-repetitive pulse) 400 200 RBSOA (Repetitive pulse) 0,001 0,001 0,01 0,1 Pulse Width : PW [s] 1 0 0 200 400 600 800 1000 Collector-Emitter Voltage : V CE [V] 1200 Gate-Emitter Voltage : V [V] [ns] ON, t r, t OFF , t f 25 V CC =400V t OFF Switching Time : t T j=25°C 1000 Switching loss vs. Collector current Capacitance vs. Collector-Emitter voltage V CC =600V, R G =9.1 Ω , V GE =±15V T j=25°C E O N 125°C 20 E O N 25°C E O F F 25°C 10 C ies 10 ies , E O F F 125°C C oes , C res [nF] 30 Capacitance : C Switching loss : E ON,E OFF ,E rr [mJ/cycle] 40 E rr 125°C E rr 25°C Co e s 1 C res 0 0 50 100 150 200 0 Collector Current : I C [A] 5 10 15 20 25 30 Collector-Emitter Voltage : V CE [V] Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Straße 26 Commonwealth House 2 Chalkhill Road Hammersmith D-60528 Frankfurt/M London W6 8DW, UK Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708 - Dallas, TX 75370 Phone 233-1589 Fax (972)381-9991 233-0481(fax) - www.collmer.com P.O. Box 702708 - Dallas, TX(972) - (972) 733-1700 - (972) 35