2-Pack IGBT 1400V 200A 2MBI 200P-140 n Outline Drawing IGBT MODULE ( P-Series ) n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous TC=25°C IC Continuous TC=80°C 1ms TC=25°C IC PULSE 1ms TC=80°C -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 1400 ± 20 300 200 600 400 200 400 1500 +150 -40 ∼ +125 2500 3.5 4.5 Units V V A W °C °C V Nm Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) • Electrical Characteristics ( at Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Symbols ICES IGES VGE(th) Collector-Emitter Saturation Voltage VCE(sat) Input capacitance Output capacitance Reverse Transfer capacitance Cies Coes Cres tON tr tOFF tf VF trr Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Test Conditions VGE=0V VCE=1400V VCE=0V VGE=± 20V VGE=20V IC=200mA Tj= 25°C VGE=15V IC=200A Tj=125°C VGE=15V IC=200A VGE=0V VCE=10V f=1MHz VCC=600V IC=200A VGE=± 15V RG=4.7Ω IF=200A VGE=0V IF=200A Min. Typ. 6.0 8.0 2.7 3.3 20000 3000 1300 2.4 Max. 2.0 400 9.0 3.0 Units mA µA V V pF 1.2 0.6 1.0 0.3 3.3 350 µs V ns • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. 0.025 Max. 0.085 0.180 Units °C/W 2-Pack IGBT 1400V 200A 2MBI 200P-140 Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j= 2 5 ° C 500 V GE= 2 0 V 1 5 V [A] [A] 400 300 200 15V V GE= 2 0 V 400 C Collector Current : I C 12V Collector Current : I T j= 1 2 5 ° C 500 11V 100 300 12V 11V 200 10V 100 10V 0 0 0 1 2 3 4 5 Collector-Emitter Voltage : V CE [V] 6 Collector-Emitter vs. Gate-Emitter Voltage T j= 1 2 5 ° C [V] 6 10 CE [V] 10 Collector Emitter Voltage : V 8 6 4 IC= 4 0 0 A IC= 2 0 0 A 2 IC= 1 0 0 A 8 6 IC= 4 0 0 A 4 IC= 2 0 0 A 2 IC= 1 0 0 A 0 5 10 15 20 Gate-Emitter Voltage : V G E [V] 25 0 5 10 15 20 Gate-Emitter Voltage : V G E [V] Switching Time vs. Collector Current Switching Time vs. Collector Current V CC = 6 0 0 V , R G=4,7 Ω , V GE = ± 1 5 V , T j= 2 5 ° C V CC = 6 0 0 V , R G=4,7 Ω , V GE = ± 1 5 V , T j= 2 5 ° C , t r, t off , t f [nsec] 0 t on 1000 tr 25 t on 1000 tr t off Switching Time : t on t off on , t r, t off , t f [nsec] 2 3 4 5 Collector-Emitter Voltage : V CE [V] T j= 2 5 ° C 0 Switching Time : t 1 Collector-Emitter vs. Gate-Emitter Voltage CE Collector Emitter Voltage : V 0 100 tf 10 100 tf 10 0 100 200 Collector Current: I C (A) 300 400 0 100 200 Collector Current: I C (A) 300 400 2-Pack IGBT 1400V 200A 2MBI 200P-140 Switching Time vs. R G Collector Current vs. Collector-Emitter Voltage V C C =600V, I C = 2 0 0 A , V G E = ± 1 5 V , T j= 2 5 ° C T j= 2 5 ° C 1000 tf 100 600 15 400 10 200 5 10 1 10 0 100 0 500 Reverse Recovery Characteristics Forward Voltage vs. Forward Current [A] T j= 1 2 5 ° C 25°C t rr = 1 2 5 ° C Reverse Recovery Current : I rr rr 400 [nsec] 1000 300 200 100 Reverse Recovery Time : t [A] t rr , I rr vs. I F V GE= 0 V F Forward Current : I 0 1500 1000 G a t e C h a r g e : Q g (nC) Gate Resistance : R G [ Ω ] 500 [V] 20 GE toff V C C =400, 600, 800V 800 Gate-Emitter Voltage : V GE tr 1000 25 [V] t on Collector-Emitter-Voltage : V Switching Time : t ,on t ,r t ,off t f [nsec] 10000 0 0 1 2 3 trr = 2 5 ° C I rr= 1 2 5 ° C 100 I rr = 2 5 ° C 10 4 0 100 200 300 400 Forward Current : I F [A] Forward Voltage : V F [V] Reverse Biased Safe Operating Area + V G E=15V, -V G E ≤ 15V, T j≤ 125°C, R G ≥ 4,7 Ω Transient Thermal Resistance 2000 (non-repetitive pulse) C -1 IGBT 10 SCSOA [A] FWD 10 Collector Current : I Thermal Resistance : R th(j-c) [°C/W] 2500 -2 1500 1000 500 RBSOA (Repetitive pulse) 10 0 -3 10 -3 10 -2 10 -1 Pulse Width : P W [sec] 10 0 0 200 400 600 800 1000 1200 Collector-Emitter Voltage : V CE [V] 1400 1600 2-Pack IGBT 1400V 200A 2MBI 200P-140 Capacitance vs. Collector-Emitter Voltage Switching Loss vs. Collector Current V CC = 6 0 0 V , R G=4,7 Ω , V GE = ± 1 5 V , C oes , C res [nF] E on 1 2 5 ° C 100 60 E on 25°C 40 E off 1 2 5 ° C C ies 10 ies 80 E off 2 5 ° C 20 T j= 2 5 ° C 100 Capacitance: C Switching Loss : E on , E off , E rr [mJ/cycle] 120 E rr 1 2 5 ° C C oes 1 C res E rr 2 5 ° C 0,1 0 0 100 200 300 Collector Current : I C [A] 400 0 5 10 15 20 25 30 Collector Emitter Voltage : V CE [V] 35 For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com