2MBI200N-060-03 IGBT Module 600V / 200A 2 in one-package Features · VCE(sat) classified for easy parallel connection · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Equivalent Circuit Schematic C2E1 Maximum ratings and characteristics E2 C1 Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous current 1ms 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -I C -IC pulse PC Tj Tstg Vis Mounting *1 Terminals *1 Rating 600 ±20 200 400 200 400 780 +150 -40 to +125 AC 2500 (1min.) 3.5 3.5 Unit V V A A A A W °C °C V N·m N·m *1 : Recommendable value : 2.5 to 3.5 N·m(M5) ¤ ¤ G1 E1 G2 ¤ Current control circuit VCE(sat) classification Rank F A B C D Lenge 1.85 2.00 2.15 2.30 2.50 Conditions to 2.10V to 2.25V to 2.40V to 2.60V to 2.80V Ic = 200A VGE = 15V Tj = 25°C Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Characteristics Min. Typ. – – 4.5 – – – – – – – – – – – – – – 13200 2930 1330 0.6 0.2 0.6 0.2 – – Conditions Unit VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=200mA VGE=15V, IC=200A VGE=0V VCE=10V f=1MHz VCC=300V IC=200A VGE=±15V RG=9.1ohm IF=200A, VGE=0V IF=200A mA µA V V pF Conditions Unit IGBT Diode the base to cooling fin °C/W °C/W °C/W Max. 2.0 30 7.5 2.8 – – – 1.2 0.6 1.0 0.35 3.0 0.3 µs V µs Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. – – – – – 0.025 Max. 0.16 0.35 – *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound E2 IGBT Module 2MBI200N-060-03 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=125°C 400 400 300 300 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25°C 200 100 100 0 0 0 1 2 3 4 5 0 3 4 5 Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C VCE [V] 10 8 Collector-Emitter voltage : VCE [V] 2 Collector-Emitter voltage : VCE [V] 6 4 2 0 8 6 4 2 0 0 5 10 15 20 25 0 Gate-Emitter voltage : VGE [V] 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=9.1 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=300V, RG=9.1 ohm, VGE=±15V, Tj=125°C 1000 Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 1 Collector-Emitter voltage : VCE [V] 10 Collector-Emitter voltage : 200 100 100 10 10 0 100 200 Collector current : Ic [A] 300 0 100 200 Collector current : Ic [A] 300 IGBT Module 2MBI200N-060-03 Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] 1000 100 25 400 20 300 15 200 10 100 5 0 0 10 5 500 10 200 Gate resistance : RG [ohm] 400 600 800 Gate charge : Qg [nC] 0 1200 1000 Reverse recovery characteristics trr, Irr, vs. IF Forward current vs. Forward voltage VGE=0V 500 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] Forward current : IF [A] 400 300 200 100 100 50 10 0 0 1 2 3 0 4 100 200 300 Forward current : IF [A] Forward voltage : VF [V] Reversed biased safe operating area +VGE=15V, -VGE <= 15V, Tj < = 125°C, RG > = 9.1 ohm Transient thermal resistance 2000 1600 Collector current : Ic [A] Thermal resistance : Rth (j-c) [°C/W] 1800 0.1 1400 1200 1000 800 600 400 0.01 200 0 0.001 0.01 0.1 Pulse width : PW [sec.] 1 0 100 200 300 400 500 Collector-Emitter voltage : VCE [V] 600 Gate-Emitter voltage : VGE [V] Dynamic input characteristics Tj=25°C Switching time vs. RG Vcc=300V, Ic=200A, VGE=±15V, Tj=25°C IGBT Module 2MBI200N-060-03 Capacitance vs. Collector-Emitter voltage Tj=25°C Switching loss vs. Collector current Vcc=300V, RG=9.1 ohm, VGE=±15V Capacitance : Cies, Coes, Cres [nF] Switching loss : Eon, Eoff, Err [mJ/cycle] 20 15 10 5 10 1 0 0 100 200 Collector current : Ic [A] Outline Drawings, mm 300 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35