2MBI300NB-060-01 IGBT Module 600V / 300A 2 in one-package Features · VCE(sat) classified for easy parallel connection · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Equivalent Circuit Schematic Maximum ratings and characteristics C2E1 Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Symbol VCES Gate-Emitter voltage Collector Continuous current 1ms VGES IC IC pulse -I C -IC pulse PC Tj Tstg Vis Mounting *1 Terminals *2 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Rating 600 ±20 300 600 300 600 1100 +150 -40 to +125 AC 2500 (1min.) 3.5 4.5 Unit V V A A A A W °C °C V N·m N·m *1 : Recommendable value : 2.5 to 3.5 N·m (M5) or (M6) *2 : Recommendable value : 3.5 to 4.5 N·m (M6) E2 C1 ¤ ¤ G1 E1 G2 ¤ Current control circuit VCE(sat) classification Rank F A B C D Lenge 1.85 2.00 2.15 2.30 2.50 Conditions to 2.10V to 2.25V to 2.40V to 2.60V to 2.80V Ic = 300A VGE = 15V Tj = 25°C Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Characteristics Min. Typ. – – 4.5 – – – – – – – – – – – – – – 19800 4400 2000 0.6 0.2 0.6 0.2 – – Condtions Unit VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=300mA VGE=15V, IC=300A VGE=0V VCE=10V f=1MHz VCC=300V IC=300A VGE=±15V RG=6.8ohm IF=300A, VGE=0V IF=300A mA µA V V pF Condtions Unit IGBT Diode the base to cooling fin °C/W °C/W °C/W Max. 2.0 30 7.5 2.8 – – – 1.2 0.6 1.0 0.35 3.0 0.3 µs V µs Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)* Characteristics Min. Typ. – – – – – 0.025 Max. 0.11 0.15 – * : This is the value which is defined mounting on the additional cooling fin with thermal compound E2 IGBT Module 2MBI300NB-060-01 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=125°C 700 700 600 600 500 500 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25°C 400 300 200 100 400 300 200 100 0 0 0 1 2 3 4 0 5 1 4 5 VCE [V] 10 8 Collector-Emitter voltage : VCE [V] 10 Collector-Emitter voltage : 3 Collector-Emitter vs. Gate-Emitter voltage Tj=125°C Collector-Emitter vs. Gate-Emitter voltage Tj=25°C 6 4 2 0 8 6 4 2 0 0 5 10 15 20 0 25 5 Gate-Emitter voltage : VGE [V] 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=6.8 ohm, VGE=±15V, Tj=125°C Switching time vs. Collector current Vcc=300V, RG=6.8 ohm, VGE=±15V, Tj=25°C 1000 Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 2 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 100 100 10 10 0 100 200 300 Collector current : Ic [A] 400 500 0 100 200 300 Collector current : Ic [A] 400 500 IGBT Module 2MBI300NB-060-01 Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] 1000 100 10 500 25 400 20 300 15 200 10 100 5 0 0 1 2 10 0 20 500 1000 1500 Gate charge : Qg [nC] Gate resistance : RG [ohm] Reverse recovery characteristics trr, Irr, vs. IF Forward current vs. Forward voltage VGE=0V 500 700 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] Forward current : IF [A] 600 500 400 300 200 100 50 100 0 0 1 2 3 0 4 100 200 300 400 500 Forward current : IF [A] Forward voltage : VF [V] Reversed biased safe operating area +VGE=15V, -VGE < = 15V, Tj < = 125°C, RG => 6.8ohm Transient thermal resistance 2500 Collector current : Ic [A] Thermal resistance : Rth (j-c) [°C/W] 3000 0.1 2000 1500 1000 500 0.01 0 0.001 0.01 0.1 Pulse width : PW [sec.] 1 0 100 200 300 400 500 Collector-Emitter voltage : VCE [V] 600 Gate-Emitter voltage : VGE [V] Dynamic input characteristics Tj=25°C Switching time vs. RG Vcc=300V, Ic=300A, VGE=±15V, Tj=25°C IGBT Module 2MBI300NB-060-01 Capacitance vs. Collector-Emitter voltage Tj=25°C Switching loss vs. Collector current Vcc=300V, RG=6.8 ohm, VGE=±15V 100 25 Capacitance : Cies, Coes, Cres [nF] Switching loss : Eon, Eoff, Err [mJ/cycle] 30 20 15 10 5 10 1 0 0 100 200 300 Collector current : Ic [A] Outline Drawings, mm 400 500 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35