2SC4276 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers JEDEC EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Base current Collector power disspation Operating junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 500 400 10 15 5 80 +150 -55 to +150 Unit V V V A A W °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Base leakage current Emitter-Base leakage current D.C. current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage *1 Switching time Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(Sat) VBE(Sat) ton tstg tf Test Conditions ICBO = 1mA ICEO = 0.2A IEBO = 1mA VCBO = 450V VEBO = 10V IC = 2A, VCE = 5V IC = 6A, IB = 1200mA Min. Typ. Max. 500 400 10 0.1 0.1 65 0.8 1.2 1.0 2.5 0.5 25 IC = 7.5A, IB1 = 750mA IB2 = -1500mA, RL = 20 ohm Pw = 20µs Duty=<2% Units V V V mA mA V V µs µs µs Thermal characteristics Item Thermal resistance Symbol Rth(j-c) Test Conditions Junction to case Min. Typ. Max. Units 1.56 °C/W 1 2SC4276 FUJI POWER TRANSISTOR D.C. current gain hFE Collector-Emitter voltage VCE[V] Characteristics Collector current IC[A] Base current IB[A] DC Current Gain Collector current IC[A] Saturation voltage VCE(sat), VBE(sat)[V] Collector Output Characteristics Collector current IC[A] Base and Collector Saturation Voltage Collector-Emitter voltage VCE[V] Safe Operating Area Switching time ton, tstg, tf [µs] *1 Switching Time Test Circuit Collector current IC[A] Switching Time 2