FUJI 2SK1279

2SK1279
N-channel MOS-FET
F-V Series
500V
> Features
0,58Ω
15A
125W
> Outline Drawing
- Include Fast Recovery Diode
- High Voltage
- Low Driving Power
> Applications
- Motor Control
- Inverters
- Choppers
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Continous Reverse Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V DS
ID
I D(puls)
I DR
V GS
PD
T ch
T stg
Rating
500
15
60
15
±20
125
150
-55 ~ +150
Unit
V
A
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Symbol
V (BR)DSS
V GS(th)
I DSS
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
I
R
g
C
C
C
t
t
t
t
V
t
Turn-Off-Time toff (ton=td(off)+tf)
Diode Forward On-Voltage
Reverse Recovery Time
- Thermal Characteristics
Item
Thermal Resistance
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
SD
rr
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
ID=1mA
VGS=0V
ID=10mA
VDS=VGS
VDS=500V
Tch=25°C
VGS=0V
VGS=±20V
VDS=0V
ID=8A
VGS=10V
ID=8A
VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=15A
VGS=10V
RGS=25 Ω
IF=IDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
Min.
500
2,1
Test conditions
channel to air
channel to case
Min.
7
Typ.
Max.
3,0
10
4,0
500
10
0,4
13
2000
270
140
30
100
400
160
0,95
150
100
0,58
Typ.
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
Unit
V
V
µA
3000
400
210
45
150
600
240
1,8
200
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Max.
35
1,0
Unit
°C/W
°C/W
2SK1279
N-channel MOS-FET
500V
0,58Ω
15A
F-V Series
125W
> Characteristics
Typical Output Characteristics
↑
Drain-Source-On-State Resistance vs. Tch
↑
→
Tch [°C]
Typical Drain-Source-On-State-Resistance vs. ID
Gate Threshold Voltage vs. Tch
↑
ID [A]
→
Tch [°C]
VDS [V]
C [nF]
8
VDS [V]
→
Qg [nC]
Allowable Power Dissipation vs. TC
↑
↑
IF [A]
↑
→
Forward Characteristics of Reverse Diode
VGS [V]
Typical Input Charge
7
6
VGS(th) [V]
5
→
Typical Capacitance vs. VDS
→
VGS [V]
gfs [S]
RDS(ON) [Ω]
ID [A]
↑
→
Typical Forward Transconductance vs. ID
↑
4 4
3
ID [A]
ID [A]
VDS [V]
↑
↑
2
RDS(ON) [Ω]
1
Typical Transfer Characteristics
9
→
VSD [V]
→
Safe operation area
Zth(ch-c) [K/W]
↑
↑
12
11
ID [A]
10
PD [W]
↑
Transient Thermal impedance
Tc [°C]
→
VDS [V]
→
This specification is subject to change without notice!
t [s]
→