2SK1821-01MR N-channel MOS-FET FAP-IIA Series 600V > Features - 6,5Ω 2A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 600 2 6 2 ±25 30 150 -55 ~ +150 Unit V A A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) I R g C C C t t t t V t Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f SD rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=600V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=1A VGS=10V ID=1A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=2A VGS=10V RGS=25 Ω IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 600 2,1 Test conditions channel to air channel to case Min. 1 FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56 Typ. 3,0 10 0,2 10 5,5 1,8 270 32 15 4 12 25 20 0,92 500 Typ. Max. 4,0 500 1,0 100 6,5 400 48 23 6 18 40 30 1,41 Max. 62,5 4,167 Unit V V µA mA nA Ω S pF pF pF ns ns ns ns V ns Unit °C/W °C/W 2SK1821-01MR N-channel MOS-FET 600V 6,5Ω 2A FAP-IIA Series 30W > Characteristics Typical Output Characteristics ↑ Drain-Source-On-State Resistance vs. Tch ↑ → Tch [°C] Typical Drain-Source-On-State-Resistance vs. ID → VGS(th) [V] Tch [°C] → → Forward Characteristics of Reverse Diode ↑ 9 IF [A] 8 ID [A] C [nF] VDS [V] 6 → Safe operation area ↑ 7 Gate Threshold Voltage vs. Tch ↑ 5 ID [A] Typical Capacitance vs. VDS → VGS [V] gfs [S] RDS(ON) [Ω] ID [A] ↑ → Typical Forward Transconductance vs. ID ↑ 4 3 ID [A] ID [A] VDS [V] ↑ ↑ 2 RDS(ON) [Ω] 1 Typical Transfer Characteristics VDS [V] → VSD [V] → Allowable Power Dissipation vs. TC Zth(ch-c) [K/W] ↑ 10 11 PD [W] ↑ Transient Thermal impedance Tc [°C] → t [s] This specification is subject to change without notice! →