FUJI 2SK1822-01M

2SK1822-01M
N-channel MOS-FET
FAP-IIIA Series
60V
> Features
-
0,07Ω
20A
35W
> Outline Drawing
High Current
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Forward Transconductance
Avalanche Proof
Including G-S Zener-Diode
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC Converters
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Continous Reverse Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V DS
ID
I D(puls)
I DR
V GS
PD
T ch
T stg
Rating
Unit
V
A
A
A
V
W
°C
°C
60
20
80
20
±20
35
150
-55 ~ +150
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Symbol
V (BR)DSS
V GS(th)
I DSS
Gate Source Leakage Current
Drain Source On-State Resistance
I
R
Forward Transconductance
Input Capacitance
Output Capacitance
g
C
C
Reverse Transfer Capacitance
C
Turn-On-Time ton (ton=td(on)+tr)
t
t
t
Turn-Off-Time toff (ton=td(off)+tf)
Diode Forward On-Voltage
Reverse Recovery Time
- Thermal Characteristics
Item
Thermal Resistance
t
V
t
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
SD
rr
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=60V
Tch=25°C
VGS=0V
Tch=125°C
VGS=±16V
VDS=0V
ID=10A
VGS=4V
ID=10A
VGS=10V
ID=10A
VDS=25V
VDS=25V
VGS=0V
Min.
60
1,0
6
Typ.
1,5
Max.
Unit
V
V
µA
mA
µA
0,09
2,0
500
1,0
10
0,11
0,055
0,07
12
600
260
900
390
Ω
S
pF
pF
Ω
f=1MHz
150
240
pF
VCC=30V
ID=20A
VGS=10V
7
30
100
11
45
150
ns
ns
ns
RGS=25 Ω
IF=2xIDR VGS=0V Tch=25°C
70
1,45
110
2,18
ns
V
IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
90
130
ns
Test conditions
channel to air
channel to case
Min.
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
Typ.
Max.
62,5
3,57
Unit
°C/W
°C/W
2SK1822-01M
N-channel MOS-FET
60V
0,07Ω
20A
FAP-IIIA Series
35W
> Characteristics
Typical Output Characteristics
↑
Drain-Source-On-State Resistance vs. Tch
↑
→
Tch [°C]
Typical Drain-Source-On-State-Resistance vs. ID
Gate Threshold Voltage vs. Tch
↑
ID [A]
→
Tch [°C]
VDS [V]
C [nF]
8
VDS [V]
→
Qg [nC]
Allowable Power Dissipation vs. TC
↑
↑
IF [A]
↑
→
Forward Characteristics of Reverse Diode
VGS [V]
Typical Input Charge
7
6
VGS(th) [V]
5
→
Typical Capacitance vs. VDS
→
VGS [V]
gfs [S]
RDS(ON) [Ω]
ID [A]
↑
→
Typical Forward Transconductance vs. ID
↑
4 4
3
ID [A]
ID [A]
VDS [V]
↑
↑
2
RDS(ON) [Ω]
1
Typical Transfer Characteristics
9
→
VSD [V]
→
Safe operation area
Zth(ch-c) [K/W]
↑
↑
12
11
ID [A]
10
PD [W]
↑
Transient Thermal impedance
Tc [°C]
→
VDS [V]
→
This specification is subject to change without notice!
t [s]
→