2SK2292-01L,S N-channel MOS-FET FAP-IIA Series 250V > Features - 1,1Ω 4A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 250 250 4 16 ±30 20 150 -55 ~ +150 Unit V V A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) I R g C C C t t t t I I I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f AV Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=250V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=2,0A VGS=10V ID=2,0A VDS=25V VDS=25V VGS=0V f=1MHz VCC=150V ID=4A VGS=10V RGS=10 Ω Tch=25°C L = 100µH Min. 250 2,5 1,0 Typ. 3,0 10 0,2 10 0,8 2,0 230 70 45 10 20 25 10 DRM SD rr Symbol R th(ch-a) R th(ch-c) IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Test conditions channel to air channel to case 3,5 500 1,0 100 1,1 350 110 70 15 30 40 15 4 DR rr Max. 1,0 110 0,5 Min. Typ. 4 8 1,5 Max. 62,5 Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A A A V ns µC Unit °C/W °C/W 2SK2292-01L,S N-channel MOS-FET 250V 1,1Ω 4A FAP-IIA Series 20W > Characteristics Typical Output Characteristics Drain-Source On-State Resistance vs. Tch ID=f(VDS); 80µs pulse test; TC=25°C ID [A] ↑ RDS(ON) [Ω] 1 VDS [V] 2 → Tch [°C] → VGS [V] → Typical Transconductance Gate Threshold Voltage vs. Tch RDS(on)=f(ID); 80µs pulse test; TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=1mA; VDS=VGS 4 5 → ID [A] Typical Capacitances VGS(th) [V] ↑ gfs [S] ↑ Tch [°C] Typical Gate Charge Characteristics IF=f(VSD); 80µs pulse test; VGS=0V ↑ VDS [V] ↑ 7 8 → Qg [nC] Power Dissipation Safe Operation Area VDS [V] ↑ ↑ ID=f(VDS): D=0,01, Tc=25°C ↑ VSD [V] PD[W] Tch [°C] → Transient Thermal impedance Zthch=f(t) parameter:D=t/T 12 VDS [V] → ↑ ID [A] 10 9 → Zth(ch-c) [K/W] PD=f(Tc) → Forward Characteristics of Reverse Diode VGS=f(Qg); ID=4A IF [A] C=f(VDS); VGS=0V; f=1MHz 6 → VGS [V] ID [A] ↑ 3 Typical Drain-Source On-State-Resistance vs. ID ↑ RDS(ON) [Ω] ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ C [nF] Typical Transfer Characteristics RDS(on) = f(Tch); ID=2A; VGS=10V → This specification is subject to change without notice! t [s] →