2SK2446-L,S N-channel MOS-FET 100V 0,055Ω 30A F-III Series > Features - 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 100 100 30 120 ±20 80 150 -55 ~ +150 Unit V V A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) g C C C t t t t V t Q Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - GSS DS(on) fs iss oss rss d(on) r d(off) f SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=100V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=15A VGS=4V ID=15A VGS=10V ID=15A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=30A VGS=10V RGS=25Ω IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 100 1,0 Test conditions channel to air channel to case Min. 15 Typ. 1,5 10 0,2 10 0,04 0,03 30 2500 500 250 20 140 500 260 0,9 130 1,0 Max. 2,5 500 1,0 100 0,07 0,055 3700 750 380 30 210 750 390 1,5 Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns V ns µC Thermal Characteristics Thermal Resistance Symbol R th(ch-a) R th(ch-c) Typ. Max. 125 1,56 Unit °C/W °C/W 2SK2446-L,S N-channel MOS-FET 100V 0,055Ω 30A F-III Series 80W > Characteristics Typical Output Characteristics Drain-Source On-State Resistance vs. Tch ID=f(VDS); 80µs pulse test; TC=25°C Typical Transfer Characteristics RDS(on) = f(Tch); ID=15A; VGS=10V ID [A] 1 VDS [V] ↑ RDS(ON) [Ω] ↑ ID [A] ↑ ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C 2 → Tch [°C] 3 → VGS [V] → Typical Drain-Source On-State-Resistance vs. ID Typical Transconductance Gate Threshold Voltage RDS(on)=f(ID); 80µs pulse test; TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=1mA; VDS=VGS 4 5 → ID [A] Typical Capacitances Tch [°C] Typical Gate Charge Characteristic IF=f(VSD); 80µs pulse test; VGS=0V VDS [V] ↑ C [nF] ↑ 7 VDS [V] 8 → Qg [nC] Power Dissipation ↑ ↑ → VSD [V] PD [W] Tch [°C] → → ↑ Zth(ch-c) [K/W] ID=f(VDS): D=0,01, Tc=25°C ↑ Transient Thermal impedance Zthch-c=f(t) parameter:D=t/T 12 ID [A] 10 9 Safe Operation Area PD=f(Tc) ↑ → Forward Characteristics of Reverse Diode VGS=f(Qg); ID=30A IF [A] C=f(VDS); VGS=0V; f=1MHz 6 → VGS [V] ID [A] VGS(th) [V] ↑ gfs [S] ↑ RDS(ON) [Ω] ↑ VDS [V] → This specification is subject to change without notice! t [s] →