2SK2525-01 N-channel MOS-FET FAP-II Series 450V > Features - 1Ω 9A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 450 450 9 36 ±30 80 150 -55 ~ +150 Unit V V A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) I R g C C C t t t t I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=450V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=4,5A VGS=10V ID=4,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=10A VGS=10V RGS=10 Ω Tch=25°C L = 100µH IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 450 2,5 Test conditions channel to air channel to case Min. 3,0 Typ. 3,0 10 0,87 6,6 1150 130 50 20 50 60 35 Max. 3,5 500 1,0 100 1,0 1700 200 75 30 75 90 55 9,0 1,1 550 3,9 Typ. 1,65 Max. 35 1,56 Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A V ns µC Unit °C/W °C/W 2SK2525-01 N-channel MOS-FET 450V 1Ω 9A FAP-II Series 80W > Characteristics Typical Output Characteristics Drain-Source On-State Resistance ID=f(VDS); 80µs pulse test; TC=25°C Typical Transfer Characteristics RDS(on) = f(Tch); ID=4,5A; VGS=10V ID [A] 1 VDS [V] ↑ RDS(ON) [Ω] ↑ ID [A] ↑ ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C 2 → Tch [°C] 3 → VGS [V] → Typical Drain-Source On-State-Resistance Typical Forward Transconductance Gate Threshold Voltage RDS(on)=f(ID); 80µs pulse test; TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=1mA; VDS=VGS 4 5 → ID [A] Typical Capacitances Tch [°C] Typical Gate Charge Characteristics IF=f(VSD); 80µs pulse test; VGS=0V VDS [V] ↑ C [nF] ↑ 7 8 → Qg [nC] Power Dissipation Safe Operation Area VDS [V] ↑ ID=f(VDS): D=0,01, Tc=25°C ↑ ↑ 9 VSD [V] → ↑ Transient Thermal impedance Zthch-c=f(t) parameter:D=t/T 12 PD[W] ID [A] 10 ↑ → Zth(ch-c) [K/W] PD=f(Tc) → Forward Characteristics of Reverse Diode VGS=f(Qg); ID=9A, Tc=25°C IF [A] C=f(VDS); VGS=0V; f=1MHz 6 → VGS [V] ID [A] VGS(th) [V] ↑ gfs [S] ↑ RDS(ON) [Ω] ↑ Tch [°C] → VDS [V] → t [s] → Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98