2SK2646-01 N-channel MOS-FET FAP-IIS Series 800V > Features - 4Ω 4A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum RatingsT( Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range - Electrical Characteristics (TC=25°C), Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) I R g C C C t t t t I V t Q Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Rating 800 4 16 ±30 4 254 80 150 -55 ~ +150 Unit V A A V A mJ W °C °C unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Turn-Off-Time toff (ton=td(off)+tf) > Equivalent Circuit C=25°C), unless otherwise specified GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=1mA VGS =0V ID=1mA VDS= VGS VDS=800V Tch =25°C VGS=0V Tch=125°C VGS =±30V VDS=0V ID=2A VGS =10V ID=2A VDS=25V VDS=25V VGS =0V f=1MHz VCC=600V ID=2A VGS=10V RGS=10 Ω Tch =25°C L = 100µH IF=2xI DR VGS =0V T ch =25°C IF=IDR V GS =0V -dI F/dt=100A/µs T ch =25°C Min. 800 3,5 Test conditions channel to air channel to case Min. Typ. 4,0 10 0,2 10 3,19 2 450 75 40 20 40 50 25 Max. 4,5 500 1,0 100 4,0 4 1,0 450 3,0 Typ. Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 Max. 75 1,56 Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A V ns µC Unit °C/W °C/W 2SK2646-01 N-channel MOS-FET 800V 4Ω 4A FAP-IIS Series 80W > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. Tch ID=f(VDS); 80µs pulse test; TC=25°C ID [A] ↑ RDS(ON) [Ω] 1 VDS [V] 2 → Tch [°C] → VGS [V] → Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(on)=f(ID); 80µs pulse test;TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=1mA; VDS=VGS 5 → ID [A] Typical Capacitances vs. VDS VGS(th) [V] ↑ gfs [S] ↑ 4 Tch [°C] Avalanche Energy Derating IF=f(VSD); 80µs pulse test; VGS=0V ↑ EAS [mJ] ↑ 7 8 → Starting Tch [°C] Power Dissipation Safe operation area VDS [V] ↑ ↑ ID=f(VDS): D=0,01, Tc=25°C VSD [V] ↑ PD [W] TC [°C] → Transient Thermal impedance Zthch=f(t) parameter:D=t/T 12 VDS [V] → ↑ ID [A] 10 9 → Zth(ch-c) [K/W] PD=F(TC) → Forward Characteristics of Reverse Diode Eas=f(starting Tch); Vcc=80V; IAV=4A IF [A] C=f(VDS); VGS=0V; f=1MHz 6 → VGS [V] ID [A] ↑ 3 Typical Drain-Source-On-State-Resistance vs. ID ↑ RDS(ON) [Ω] ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ C [F] Typical Transfer Characteristics RDS(on) = f(Tch): ID=2A; VGS=10V → This specification is subject to change without notice! t [s] →