2SK2901-01L,S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features T-Pack(S) 4.5 ±0.2 9.3 ±0.5 1.32 +0.2 1.2 ±0.2 Applications 3.0 ±0.3 1.5 Max 10 +0.5 0.9 ±0.3 T-Pack(L) High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 0.8 —0.1 0.4 +0.2 2.7 5.08 Switching regulators 1. Gate 2, 4. Drain 3. Source UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 60 ±45 ±180 ±30 461.9 60 +150 -55 to +150 Unit Drain(D) V A A V mJ W °C °C *1 L=0.304mH, Vcc=24V Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol BVDSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS =60V VGS=0V VGS=±30V VDS=0V ID=22.5A VGS=10V ID=22.5A VDS=25V Min. Typ. 60 2.5 Tch=25°C Tch=125°C VDS=25V VGS =0V f=1MHz VCC=30V ID=45A VGS=10V RGS=10 Ω L=100 µH Tch=25°C IF=45A VGS=0V Tch=25°C IF=45A VGS=0V -di/dt=100A/µs Tch=25°C 3.0 10 0.2 10 12.0 10.0 25.0 2300 910 260 18 55 70 48 45 1.0 60 0.11 Max. 3.5 500 1.0 100 14.5 3450 1370 390 30 80 120 80 1.5 Units V V µA mA nA mΩ S pF ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. Units 2.08 125.0 °C/W °C/W 1 2SK2901-01L,S FUJI POWER MOSFET Characteristics Power Dissipation PD=f(Tc) 80 10 Safe operating area ID=f(VDS):D=0.01,Tc=25°C 3 t= 60 10 1µs 2 10µs 100µs 40 10 ID [A] PD [W] D.C. 1 1ms 10ms 20 10 0 100ms t D= t T T 10 0 0 50 100 -1 10 150 -1 10 0 10 Tc [°C] 1 10 2 10 3 VDS [V] Typical transfer characteristics ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25°C 100 100 VGS=20V 10V 80 8V 6V 5.5V 10 ID [A] 60 ID [A] 5V 40 4.5V 20 1 4.0V 3.5V 0 0 1 2 3 4 0.1 5 0 2 4 Typical forward transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C 10 6 8 10 VGS [V] VDS [V] Typical Drain-Source on-State Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 50 2 VGS= 3.5V 4.0V 4.5V 5.0V gfs [s] RDS(on) [m Ω ] 40 10 1 30 5.5V 20 6V 8V 10V 20V 10 0 10 100 10 1 ID [A] 10 2 0 0 20 40 60 80 100 ID [A] 2 2SK2901-01L,S FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=22.5A,VGS=10V Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=10mA 5.0 35 4.5 30 4.0 25 3.5 20 max. typ. VGS(th) [V] RDS(on)[m Ω] max. 3.0 15 typ. 2.5 min. 2.0 1.5 10 1.0 5 0.5 0 -50 0 50 100 0.0 150 -50 -25 0 25 50 75 100 125 150 Tch [°C] Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=45A,Tch=25°C 50 Typical capacitances C=f(VDS):VGS=0V,f=1MHz 25 10n VDS VGS 40 20 Ciss Vcc=48V 1n VDS [V] 20 VGS [V] 15 12V Coss C [F] 30V 30 Crss 10 100p 10 5 0 0 0 20 40 60 80 100 120 10p -2 10 140 10 -1 10 Qg [nC] 0 10 1 10 2 VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=30V,VGS=10V,RG=10Ω 4 10 110 100 90 80 3 10 60 t [ns] IF [A] 70 50 10V 5V VGS=0V 40 td(off) 2 10 30 tf 20 tr 10 td(on) 1 0.0 0.2 0.4 0.6 VSD [V] 0.8 1.0 1.2 1.4 10 -1 10 0 1 10 10 2 10 ID [A] 3 2SK2901-01L,S FUJI POWER MOSFET Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch) Transient thermal impedance Zthch=f(t) parameter:D=t/T 1 10 50 40 0.5 0 Zthch-c [K/W] 10 I(AV) [A] 30 0.2 0.1 0.05 -1 10 0.02 20 t D= 0.01 0 10 t T T -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t [s] 0 0 50 100 150 Starting Tch [°C] Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V, I(AV)<=45A 500 400 Eas [mJ] 300 200 100 0 0 50 100 150 Starting Tch [°C] 4