2SK3554-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 250 220 ±25 ±100 ±30 25 372 20 5 2.02 135 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C < < DSS, Tch=150°C < *1 L=0.67mH, Vcc=48V *2 Tch=150°C =-ID, -di/dt=50A/µs, Vcc=BV *3 IF< < *4 VDS =250V *5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS=250V VDS=200V VGS=±30V ID=12.5A VGS=0V VGS=0V VDS=0V ID=12.5A VDS =75V VGS=0V f=1MHz VDS=25V Typ. 250 3.0 Tch=25°C Tch=125°C 10 75 16 2000 220 15 20 30 60 20 44 14 16 VGS=10V 8 VCC=72V ID=12.5A VGS=10V RGS=10 Ω V CC =72V ID=12A VGS=10V L=100µH Tch=25°C IF=25A VGS=0V Tch=25°C IF=25A VGS=0V -di/dt=100A/µs Tch=25°C Max. 5.0 25 250 100 100 3000 330 30 30 45 90 30 66 21 24 25 1.10 0.45 1.5 1.65 Units V V µA nA mΩ S pF ns nC A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.926 62.0 Units °C/W °C/W 1 2SK3554-01 FUJI POWER MOSFET Characteristics 200 Typical Output Characteristics Allowable Power Dissipation PD=f(Tc) 100 ID=f(VDS):80µs Pulse test,Tch=25°C 175 20V 80 10V 150 8V 7.5V 60 ID [A] PD [W] 125 100 7.0V 40 75 6.5V 50 20 6.0V 25 VGS=5.5V 0 0 0 25 50 75 100 125 150 0 2 4 6 Tc [°C] 8 10 12 VDS [V] Typical Transconductance Typical Transfer Characteristic gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 100 100 gfs [S] ID[A] 10 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C 0.25 270 VGS= 5.5V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=12.5A,VGS=10V 240 6.0V 6.5V 7.0V 210 7.5V RDS(on) [ m Ω ] RDS(on) [ Ω ] 0.20 100 ID [A] 8V 0.15 10V 20V 0.10 180 150 max. 120 90 typ. 60 0.05 30 0.00 0 0 20 40 60 ID [A] 80 100 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3554-01 7.0 FUJI POWER MOSFET Typical Gate Charge Characteristics Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA VGS=f(Qg):ID=25A, Tch=25°C 14 6.5 6.0 12 max. 5.0 Vcc= 36V 10 4.5 72V 96V 4.0 VGS [V] VGS(th) [V] 5.5 3.5 3.0 min. 8 6 2.5 2.0 4 1.5 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 150 0 10 20 30 Tch [°C] 1 10 40 50 60 Qg [nC] Typical Forward Characteristics of Reverse Diode Typical Capacitance C=f(VDS):VGS=0V,f=1MHz IF=f(VSD):80µs Pulse test,Tch=25°C 100 Ciss 0 10 IF [A] C [nF] 10 Coss -1 1 10 Crss -2 10 -1 0 10 1 10 10 2 10 VDS [V] 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VSD [V] Typical Switching Characteristics vs. ID 3 t=f(ID):Vcc=72V, VGS=10V, RG=10Ω 10 tf 2 10 t [ns] td(off) tr td(on) 1 10 0 10 -1 10 0 1 10 10 2 10 ID [A] 3 2SK3554-01 FUJI POWER MOSFET Transient Thermal Impedance Zth(ch-c)=f(t):D=0 1 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 -5 10 -4 10 -3 10 -2 10 -1 10 10 0 10 t [sec] Avalanche current IAV [A] Maximum Avalanche Current Pulsewidth 10 2 10 1 10 0 IAV=f(tAV):starting Tch=25°C. Vcc=48V Single Pulse 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 4