FUJI 6MBP25RA120

6MBP25RA120
1200V / 25A 6 in one-package
IGBT-IPM R series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· Compatible with existing IPM-N series packages
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol
Item
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current
DC
1ms
DC
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque
Mounting (M5)
Terminal (M5)
VDC
VDC(surge)
VSC
VCES
IC
ICP
-IC
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5
Rating
Min.
Max.
0
0
200
0
0
0
0
-40
-20
-
900
1000
800
1200
25
50
25
198
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *6
3.5 *6
Unit
V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
Fig.1 Measurement of case temperature
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item
INV
Symbol
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
ICES
VCE(sat)
VF
Condtion
VCE=1200V input terminal open
Ic=25A
-Ic=25A
Min.
Typ.
–
–
–
–
–
–
Max.
Unit
1.0
2.6
3.0
mA
V
V
6MBP25RA120
IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
Symbol
Iccp
ICCN
Vin(th)
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level
INV
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IPM
VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
VUV
VH
tALM
tSC
RALM
Condition
fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature
surface of IGBT chips
Tj=125°C
Tj=25°C
Fig.2
Tj=25°C
Fig.3
Min.
Typ.
Max.
3
18
10
65
1.00
1.35
1.70
1.25
1.60
1.95
8.0
110
125
20
150
20
38
10
11.0
12.5
0.2
1.5
2
12
1425
1500
1575
Unit
mA
mA
V
V
V
°C
°C
°C
°C
A
µs
V
V
ms
µs
ohm
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item
Switching time (IGBT)
Symbol Condition
ton
toff
trr
Switching time (FWD)
Min.
IC=25A, VDC=600V
Typ.
Max.
Unit
-
-
µs
µs
µs
0.3
-
IF=25A, VDC=600V
3.6
0.4
Thermal characteristics( Tc=25°C)
Item
Junction to Case thermal resistance
INV
IGBT
FWD
Case to fin thermal resistance with compound
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Typ.
0.05
Max.
0.63
1.33
-
Unit
°C/W
°C/W
°C/W
Typ.
15
-
Max.
800
16.5
20
3.0
3.0
Unit
V
V
kHz
N·m
N·m
Recommendable value
Item
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque
Mounting (M5)
Terminal (M5)
Symbol
VDC
VCC
fSW
-
Min.
200
13.5
1
2.5
2.5
6MBP25RA120
IGBT-IPM
Block diagram
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
Outline drawings, mm
Mass : 440g
6MBP25RA120
IGBT-IPM
Characteristics (Representative)
Control Circuit
Power supply current vs. Switching frequency
Tj=100°C
In pu t sig n al thresho ld voltag e
vs. Po wer su p p ly vo lta ge
2.5
25
V cc= 15V
V cc= 13V
20
15
10
V cc= 17V
5
V cc= 13V
V cc= 15V
: V in (on ),V in(o ff) (V )
V cc= 17V
P -sid e
N -sid e
In pu t s ign a l th res ho ld v o lta ge
P owe r su p ply cu rre nt : Ic c (m A )
30
2
} V in(o ff)
1.5
} V in(o n)
1
0.5
0
0
0
5
10
15
20
12
25
13
S witchin g freq ue nc y : fsw (kH z)
14
15
16
17
18
P ow e r s up p ly v oltag e : V c c (V )
U n d er vo ltag e hys teris is vs . Jnc tion tem p e rature
U n d e r v o lta g e v s . J u n c tio n te m p e ra tu re
1
U n d e r vo lta g e h yste risis : V H (V )
14
12
U n d e r v o lta ge : V U V T (V )
T j=2 5• •
T j=1 25 • •
10
8
6
4
0.8
0.6
0.4
0.2
2
0
0
20
40
60
80
10 0
12 0
20
14 0
40
80
10 0
12 0
14 0
17
18
O ver he ating charac teris tics
T c O H ,T jO H ,T c H ,T jH v s. V cc
A larm h old tim e vs. Po we r sup ply voltag e
200
O v er he ating protection : T cO H ,T jO H (°C )
O H hysterisis : T cH ,T jH (°C )
3
2.5
Tj=125°C
A larm h o ld tim e : tA L M (m S e c )
60
Junction temperature : Tj (°C)
Junction temperature : Tj (°C)
2
Tj=25°C
1.5
1
0.5
0
TjO H
150
TcO H
100
50
TcH,TjH
0
12
13
14
15
16
P ow e r s up p ly v oltag e : V cc (V )
17
18
12
13
14
15
16
P ow e r s upply vo ltage : V cc (V)
6MBP25RA120
IGBT-IPM
Inverter
C o llec to r cu rren t vs . C o lle cto r-E m itte r vo lta g e
Tj= 1 25 °C
Collector current vs. Collector-Emitter voltage
Tj=25°C
Vcc=15V
40
V cc= 15V
40
Vcc=17V
35
Vcc=13V
C ollec to r C u rre nt : Ic (A )
Collector Current : Ic (A)
35
30
25
20
15
25
20
15
10
5
5
0
0.5
1
1.5
2
2.5
V cc= 13V
30
10
0
V cc= 17V
0
3
0
0.5
Collector-Emitter voltage : Vce (V)
2
2.5
3
1 000 0
S w itc hin g tim e : ton ,to ff,tf (n S e c)
1 000 0
to ff
1000
to n
tf
10 0
to ff
to n
1000
tf
100
10
10
0
5
10
15
20
25
30
35
0
40
5
10
15
20
25
30
35
40
C o lle c tor c u rre nt : Ic (A )
C o lle c tor c u rre nt : Ic (A )
R everse reco very ch aracteristics
trr,Irr vs. IF
F o rw a rd cu rre n t vs. F orw a rd vo lta g e
40
12 5°C
R e ve rse rec ove ry c u rre n t : Irr(A )
R eve rse re c o ve ry tim e : trr(n S e c)
1 00 0
35
F orw a rd C u rre n t : If (A )
1.5
S w itc h in g tim e vs . C o lle c to r c u rre n t
E d c = 6 0 0 V ,V cc = 1 5 V ,Tj= 1 2 5 °C
S witc h in g tim e vs . C ollector c u rren t
E d c =6 00 V ,V cc= 15 V ,Tj= 25 °C
S w itc hin g tim e : ton ,to ff,tf (n S e c )
1
C olle c to r-Em itte r vo lta g e : V c e (V)
25°C
30
25
20
15
10
trr1 2 5 °C
trr2 5°C
100
Irr12 5 °C
10
Irr2 5°C
5
0
0
0.5
1
1.5
2
Fo rw a rd vo lta g e : V f (V )
2.5
3
1
0
5
10
15
20
25
F o rw ard c u rre nt : IF (A )
30
35
40
6MBP25RA120
IGBT-IPM
Reversed biased safe operating area
Vcc=15V,Tj <= 125°C
Tra n s ie n t th e rm a l re sista n c e
350
300
FW D
1
IG B T
0.1
Collector current : Ic (A)
T h erm a l re s ista n ce : R th (j-c ) (°C /W )
10
250
200
SCSOA
(non-repetitive pulse)
150
100
50
RBSOA
(Repetitive pulse)
0
0 .0 1
0.00 1
0 .0 1
0.1
1
0
200
P ow er d era tin g fo r IG B T
(p er device)
600
800
1000
1200
1400
P ow er dera ting for F W D
(pe r d evice)
2 50
C o lle cte r P o w er D iss ip ation : P c (W )
10 0
2 00
1 50
1 00
50
80
60
40
20
0
0
0
20
40
60
80
1 00
1 20
1 40
0
20
1 60
40
60
80
10 0
12 0
14 0
16 0
C a se T e m p era ture : T c (°C )
C a se Tem peratu re : T c (°C )
S witchin g Lo s s vs. C olle c to r C u rrent
E dc =600 V ,V cc= 15V ,Tj= 25 °C
S w itch in g L o s s vs . C o lle c to r C u rre nt
E dc =6 0 0 V ,V cc =1 5 V ,Tj= 1 2 5 °C
12
12
S w itch in g lo s s : E o n,Eo ff,E rr (m J/cy c le)
S w itc h in g lo s s : E o n, E o ff,E rr (m J/c y c le)
C ollecter P ow er D is s ipa tion : P c (W )
400
Collector-Emitter voltage : Vce (V)
P u ls e w idth :P w (s e c )
10
8
Eo n
6
4
Eo ff
2
E rr
Eo n
10
8
6
Eo ff
4
E rr
2
0
0
0
5
10
15
20
25
30
C o lle ct or c u rre nt : Ic (A )
35
40
0
5
10
15
20
25
30
C o lle ctor cu rre nt : Ic (A )
35
40
6MBP25RA120
IGBT-IPM
O ver curre nt p ro te ction v s. J u nctio n te m p eratu re
Vcc =1 5 V
O ver current protection level : Ioc(A)
100
80
60
40
20
0
0
20
40
60
80
100
120
Junction tem perature : Tj(°C)
140