ESAC83M-004 (20A) (40V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain 3. Source Features JEDEC Insulated package by fully molding Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics Absolute maximum ratings Item Symbol Conditions Rating Unit 40 V Repetitive peak reverse voltage VRRM Non-repetitive peak reverse voltage VRSM tw=500ns, duty=1/40 48 V Average output current Io Square wave, duty=1/2 Tc=79°C 20* A Surge current IFSM Sine wave 10ms 120 A Operating junction temperature Tj -40 to +150 °C Storage temperature Tstg -40 to +150 °C * Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Symbol Conditions Forward voltage drop VFM IFM=8A Reverse current IRRM VR=VRRM Thermal resistance Rth(j-c) Junction to case Max. Unit 0.55 V 15 2.5 mA °C/W ESAC83M-004 (20A) (40V / 20A ) Characteristics Reverse characteristics Forward characteristics 50 30 10 10 IR [mA] 1 IF [A] 5 0.1 3 1 0 0.2 0.4 0.6 0.8 1.0 0.01 1.2 0 10 20 30 VF [V] 40 50 60 70 VR [V] Reverse power dissipation Forward power dissipation 20 7.5 WF [W ] 16 W R 12 [W ] 5.0 8 2.5 4 0 0 5 10 0 15 0 10 20 Io [A] 30 40 50 VR [V] Junction capacitance characteristics Output current-case temperature 3000 140 120 Cj Tc [°C ] 100 1000 [pF] 500 80 300 60 100 0 2 4 6 8 10 12 14 Io [ A ] 16 18 20 5 10 VR [V] 30 50 100 ESAC83M-004 (20A) (40V / 20A ) Surge capability 300 100 IFSM [A] 50 30 10 1 3 5 10 30 [time] (at 50Hz) Transient thermal impedance 10 1 [°C/W] 100 10-1 10-3 10-2 10-1 t [sec.] 100 101 102