FUJI ESAD92M-02

ESAD92M-02 (20A)
Outline drawings, mm
15.5 ±0.3
±0.3
+0.2
1.1 —0.1
5.45 ±0.2
Features
Insulated package by fully molding
Low VF
Super high speed switching
3.2 +0.3
20 Min
1.6 ±0.3
5.45 ±0.2
±0.3
21.5
5.5 ±0.2
2.3 ±0.2
2.1±0.3
5.5
ø3.2 ±0.2
9.3 ±0.3
LOW LOSS SUPER HIGH SPEED RECTIFIER
( 200V / 20A )
0.6 +0.2
3.5 ±0.2
1. Gate
2. Drain
3. Source
JEDEC
EIAJ
Connection diagram
High reliability by planer design
Applications
High speed power switching
1
2
3
Maximum ratings and characteristics
Absolute maximum ratings
Item
Symbol
Conditions
Repetitive peak reverse voltage
VRRM
Average output current
IO
Square wave, duty=1/2, Tc=108°C
Surge current
IFSM
Sine wave 10ms
Operating junction temperature
Storage temperature
Rating
Unit
200
V
20*
A
100
A
Tj
-40 to +150
°C
Tstg
-40 to +150
°C
*Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VFM
IFM=10A
Reverse current
IRRM
VR=VRRM
Reverse recovery time
t rr
IF=0.1A, IR=0.2A, Irec=0.05A
Thermal resistance
Rth(j-c)
Junction to case
Max.
0.95
Unit
V
100
µA
40
ns
2.0*
°C/W
ESAD92M-02 (20A)
(200V / 20A )
Characteristics
Reverse characteristics
Forward characteristics
10000
5000
3000
100
50
30
1000
500
300
10
IF
[A]
5
IR
100
[µA] 50
3
30
1
10
5
3
0.5
1
0.5
0.3
0
0.2 0.4 0.6
0.8
1.0 1.2
1.4
0
1.6
100
200
VR [V]
VF [V]
Forward power dissipation
Output current-case temperature
14
140
12
10
120
Tc
8
WF
[W]
[°C] 100
6
80
4
2
60
0
0
2
4
6
8
10
12
0
14
4
8
Io [A]
12
16
20
Io [A]
Junction capacitance characteristics
Surge capability
100
300
50
30
100
Cj
IFSM
[pF]
[A]
50
10
30
5
3
10
5
10
30
VR [V]
50
100
200
1
3
5
10
[time] (at 50Hz)
30
ESAD92M-02 (20A)
(200V / 20A )
Transient thermal impedance
101
[°C/W]
100
10-1
10-3
10-2
10-1
t [sec.]
100
101
102