ESJA19 (10kV,12kv/5mA) Outline Drawings HIGH VOLTAGE DIODE ESJA19 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Cathode Mark Lot No. o 2.5 o 0.5 Features 27 min. Ultra high speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage 10 27 min. Cathode Mark Type Mark Applications Rectification for CRT display monitor high voltage power supply (FBT: Flyback Transformer) ESJA19-10 ESJA19-12 Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition Repetitive Peak Reverse Voltage VRRM Average Output Current IO Surge Current IFSM Ta=25°C,Resistive Load Junction Temperature Tj 10mS Sine-half wave peak value Allowable Operation Case Temperature Tc Storage Temperature Tstg ESJA19 -10 -12 10 12 Units kV 5 mA 0.5 A 120 °C 100 °C -40 to +120 °C ESJA19 Units Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions Maximum Forward Voltage Drop VF IF=10mA Maximum Reverse Current IR VR=VRRM Maximum Reverse Recovery Time trr Junction Capacitance Cj -10 -12 36 42 V 2 µA Ta=25°C,IF=2mA,IR=4mA 0.045 µs Ta=25°C,VR=0V,f=1MHz 1 pF ESJA19(10kV,12kv/5mA) Characteristics ESJA19-10 30 Tj=100°C ESJA19-12 0.1 20 I IR Tj= 25°C Tj=100°C F [µA] [mA] 0.01 10 ESJA19-10 ESJA19-10 Tj= 25°C ESJA19-12 ESJA19-12 0 1E-3 0 20 40 V F 60 80 0 4 [V] Forward Characteristics 12 16 [kV] Reverse Characteristics 100 1.0 Tj=25°C f=1MHz 0.8 Cj 8 VR Tj= 25°C I R =100 µ A N=100pcs. 80 0.6 N 60 0.4 [pcs.] 40 [pF] ESJA19-12 ESJA19-10 ESJA19-10 ESJA19-12 20 0.2 0.0 0 0 40 80 V 120 Bias 160 200 8 12 16 V [V] Junction Capacitance Characteristics AV ESJA19-10 24 [kV] Avalanche Breakdown Voltage 0.01µF 100 20 Tj= 25°C N=100pcs. D.U.T 150 kohm 1kohm 100ohm 50 N OSCILLO SCOPE 0 100 ESJA19-12 [pcs.] IF=2mA 50 1mA 0 IR=4mA 0 0.00 0.02 0.04 trr 0.06 ( µ s) Reverse Recovery Time 0.08 0.10 trr 28