FUJI FMM5057VF

FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
FEATURES
・High Output Power: 34.0dBm(typ.)
・High Linear Gain: 26.0dB(typ.)
・Low VSWR
・Broad Band: 7.1～8.5GHz
・Impedance Matched Zin/Zout = 50Ω
・Small Hermetic Metal-Ceramic Package(VF)
DESCRIPTION
The FMM5057VF is a MMIC amplifier that contains a four-stage
amplifier, internally matched, for standard communications band in the
7.1 to 8.5GHz frequency range.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃)
Item
DC Input Voltage
Symbol
Rating
Unit
VDD
12
V
DC Input Voltage
VGG
-7
V
Input Power
Pin
14
dBm
Storage Temperature
Tstg
-55 to +125
℃
Symbol
Condition
Unit
VDD
10
V
Input Power at Tc=25℃
Pin
12
dBm
DC Input Current at Tc=25℃
IDD
≤1200
mA
Recommended Operating Condition
Item
DC Input Voltage at Tc=25℃
Operating Case Temperature
Tc
℃
-40 to +85
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃)
Test Conditions
Symbol
Item
Min.
f
Frequency Range
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Max.
P1dB
VDD=10V
VGG=-5V
f=7.1 to 8.5GHz
G1dB
Unit
GHz
7.1 - 8.5
ΔG
Gain Flatness
Limit
Typ.
32.0
34.0
-
dBm
23.0
26.0
-
dB
4.0
dB
-
2.4
-
Input VSWR
VSWRi
-
2:1
Output VSWR
VSWRo
-
2:1
-
1100
1200
mA
IGG
-
5.0
15.0
mA
ΔTch
-
50
-
℃
DC Input Current
VDD=10V,VGG=-5V
IDD
DC Input Current
Channel Temperature Rise
Note:G1dB is referenced to Linear Gain measured at Pin=-3dBm.
Class 0
～ 199 V
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.1
May 2003
-
-
G.C.P.:Gain Compression Point
CASE STYLE: VF
ESD
2.6 : 1
1
FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. INPUT POWER
OUTPUT POWER vs. FREQUENCY
VDD=10V,VGG=-5V
VDD=10V,VGG=-5V
34
7.1GHz
7.7GHz
8.5GHz
32
P1dB
30
Pin=+3dBm
26
50
22
40
28
30
24
20
20
10
Pin=-5dBm
18
7.5
8
Frequency [GHz]
-10
8.5
-5
-30
10
15
VDD=10V, VGG=-5V
3
7.1GHz
7.7GHz
8.5GHz
-25
5
VSWR vs. FREQUENCY
VDD=10v,VGG=-5v
-20
0
Input Power [dBm]
IMD vs OUTPUT POWER
INPUT
2.5
OUTPUT
-35
2
IM3
-40
VSWR
Intermodulation Distortion [dBc]
0
16
7
-45
IM5
-50
1.5
1
-55
-60
0.5
-65
-70
0
15
20
25
2-tone total Pout[dBm]
30
6.5
7
7.5
8
Frequency[GHz]
2
8.5
9
P ow e r Adde d Efficie ncy[%]
Pin=+11dBm
36
Output Pow e r [dBm ]
Output P ow e r [dBm ]
38
FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
DRAIN CURRENT vs OUTPUT POWER
AMPM vs OUTPUT POWER
VDD=10V, VGG=-5V
VDD=10V,VGG=-5V
20
7.1GHz
7.8GHz
8.5GHz
15
1200
∆Phase [deg.]
D ra in C u rre n t[m A ]
1300
1100
7.1GHz
7.7GHz
8.5GHz
1000
10
5
0
-5
900
-10
18
22
26
30
Output Power[dBm]
34
24
26
VGG=-5V,f=7.7GHz
VGG=-5V,f=7.7GHz
38
1400
Pin=+11dBm
34
P1dB
30
Pin=+3dBm
22
Drain Current[mA]
O u tp u t P o w e r [d B m ]
34
VDD=8V
VDD=9V
VDD=10V
1300
1200
1100
1000
Pin=-5dBm
18
900
7.5
8
8.5
9
9.5
Drain Voltage,VDD[V]
10
36
DRAIN CURRENT vs OUTPUT POWER
OUTPUT POWER vs. DRAIN VOLTAGE
26
28
30
32
Output Power [dBm]
10.5
18
3
22
26
30
Output Power[dBm]
34
FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. INPUT POWER
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. INPUT POWER
VGG=-5V,f=7.7GHz
VDD=10V,f=7.7GHz
32
40
28
30
24
20
20
10
16
0
-10
-5
36
0
5
10
Output Pow er[dB m]
VDD=8V
VDD=9V
VDD=10V
40
VGG=-5.5V
VGG=-5V
VGG=-4.5V
32
30
25
28
20
24
15
10
20
5
16
0
-10
15
Input Power [dBm]
-5
0
5
10
Input Power[dBm]
15
OUTPUT POWER vs. GATE VOLTAGE
DRAIN CURRENT vs OUTPUT POWER
VDD=10V,f=7.7GHz
VDD=10V,f=7.7GHz
1400
38
Pin=+11dBm
1300
34
O u tp u t P o w e r [d B m ]
Drain Current[m A]
35
Pow e r Adde d Efficie ncy[%]
50
P owe r A dde dE ffic ie nc y[% ]
Ou tp u t P o w e r [d Bm ]
36
1200
1100
1000
VGG=-5.5V
VGG=-5V
VGG=-4.5V
900
P1dB
30
Pin=+3dBm
26
22
800
Pin=-5dBm
18
18
23
28
33
-6
Output Power[dBm]
-5.5
-5
Gate Voltage,VGG[V]
4
-4.5
-4
FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
■ S-PARAMETER
+90 °
+50j
+100j
+25j
7.8
+250j
+10j
7.1
10 Ω
25 Ω
7.1
-10j
± 180 ° 4 0
∞
8 .5GH z
30
Scale for |S 21|
7.8
-250j
8.5G H z
0.075
-25j
-100j
0.1
-90°
S 11
-50j
S 22
S 12
S 21
VDD=10.0V, VGG=-5.0V
Frequency
[GHz]
6.9
7
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
8
8.1
8.2
8.3
8.4
8.5
8.6
S11
MAG
0.22
0.19
0.16
0.12
0.09
0.07
0.09
0.13
0.18
0.23
0.28
0.33
0.36
0.39
0.41
0.42
0.41
0.40
S21
ANG
-32.75
-38.49
-42.30
-42.44
-32.59
-2.59
28.05
38.99
40.08
36.58
31.41
24.61
16.99
8.76
-0.24
-9.50
-19.29
-28.69
MAG
20.21
20.78
21.29
21.74
22.04
22.24
22.33
22.35
22.42
22.37
22.44
22.42
22.41
22.35
22.15
21.99
21.71
21.40
ANG
-147.13
-171.17
164.64
140.28
115.51
90.84
66.15
41.55
17.21
-7.47
-32.13
-56.99
-82.39
-108.02
-133.79
-160.00
173.43
146.38
5
S12
MAG
0.0018
0.0017
0.0017
0.0018
0.0020
0.0022
0.0025
0.0028
0.0031
0.0033
0.0036
0.0038
0.0040
0.0042
0.0044
0.0044
0.0043
0.0041
ANG
141.10
139.86
144.62
148.20
146.45
148.64
143.94
139.92
134.35
127.55
121.48
116.50
105.95
97.60
89.83
81.16
72.49
63.50
0°
Scale for |S 12|
0
S22
MAG
0.25
0.18
0.11
0.07
0.08
0.14
0.20
0.25
0.29
0.33
0.36
0.38
0.38
0.37
0.36
0.33
0.30
0.26
ANG
-1.17
-7.55
-6.51
20.06
63.42
73.27
68.70
59.98
49.76
38.34
26.63
14.30
1.81
-10.89
-23.72
-35.94
-47.13
-57.41
FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
■ Recommended Bias Circuit and Internal Block Diagram
1000pF
50Ω
VGG
N.C.
RFin
RFout
VDD
VDD
50Ω
50Ω
1000pF
1000pF
Note 1: The RC networks are recommended on the bias supply lines, close to the package,
to prevent video oscillations which could damage the module.
Note 2: Bias point VDD can be connected at the input side or at the output.
The two pins named VDD are internally connected.
6
PIN ASSIGMENT
1 : VDD
2 : RF in
3 : VGG
4 : N.C.
5 : RF out
6 : VDD
FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
■ Package Out Line
3
2
4
3
5
6
1
PIN ASSIGMENT
1 : VDD
2 : RF in
3 : VGG
4 : N.C.
5 : RF out
6 : VDD
Unit : mm
7
FMM5057VF
7.1-8.5GHz Power Amplifier MMIC
For further information please contact :
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0202M200
8