FUJI MB85R256PF

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-13101-3E
Memory FRAM
CMOS
256 K (32 K × 8) Bit
MB85R256
■ DESCRIPTIONS
The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM MB85R256 is able to retain data without back-up battery.
The memory cells used for the MB85R256 has inproved at least 1010 times of read/write access per bit, significantly
outperforming FLASH memory and EEPROM in durability.
The MB85R256 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■ FEATURES
•
•
•
•
•
•
•
Bit configuration: 32,768 words x 8 bits
Read/write durability: 1010 times/bit (Min)
Peripheral circuit CMOS construction
Operating power supply voltage: 3.0 V to 3.6 V
Operating temperature range: −40 °C to +85 °C
28-pin, SOP flat package
28-pin, TSOP(1) flat package
■ PACKAGES
28-pin plastic SOP
28-pin plastic TSOP(1)
(FPT-28P-M17)
(FPT-28P-M03)
MB85R256
■ PIN ASSIGNMENTS
(TOP VIEW)
A14
1
28
VCC
A12
2
27
WE
A7
3
26
A13
A6
4
25
A8
A5
5
24
A9
A4
6
23
A11
A3
7
22
OE
A2
8
21
A10
A1
9
20
CE
A0
10
19
I/O7
I/O0
11
18
I/O6
I/O1
12
17
I/O5
I/O2
13
16
I/O4
GND
14
15
I/O3
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
(FPT-28P-M17)
21
20
19
18
17
16
15
14
13
12
11
10
9
8
(FPT-28P-M03)
■ PIN DESCRIPTIONS
Pin name
A0 to A14
Address Input
I/O0 to I/O7
Data input/output
CE
Chip enable input
WE
Write Enable input
OE
Output enable input
VCC
Power supply ( + 3.3 V Typ)
GND
2
Function
Ground
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
MB85R256
■ BLOCK DIAGRAM
A14 to A10
Block decoder
A14 to A0
Address
latch
A7 to A0
Row decoder
FRAM array:
32,768 x 8
WE
OE
Pseudo-SRAM interface logic
circuit
CE
A8, A9
Column decoder
Control logic
I/O latch bus
driver
I/O0-I/O7
I/O7 to I/O0
■ FUNCTION LIST
Operation mode
Standby precharge
CE
WE
OE
H
×
×
×
L
L
I/O7 to I/O0
Power supply current
High-Z
Standby
(ISB)


Latch address
L
Write
L
L
H
Data input
Read
L
H
L
Data output
Output Disable
×
H
H
High-Z
Operation (ICC)
H: High level, L: Low level, x: Irrespective of “H” or “L”
3
MB85R256
■ ABSOLUTE MAXIMUM RANGES
Parameter
Rating
Symbol
Min
Max
Unit
Power supply voltage
VCC
− 0.5
+ 4.6
V
Input voltage
VIN
− 0.5
VCC + 0.5
V
VOUT
− 0.5
VCC + 0.5
V
TA
− 40
+ 85
°C
Tstg
− 40
+ 85
°C
Output voltage
Operating temperature
Storage temperature
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Value
Min
Typ
Max
Unit
Power supply voltage
VCC
3.0
3.3
3.6
V
High level input voltage
VIH
0.8 × VCC

VCC + 0.5
V
Low level input voltage
VIL
− 0.5

+ 0.6
V
Operating temperature
TA
− 40

+ 85
°C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
4
MB85R256
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Parameter
Symbol
Input leakage current
| ILI |
Output leakage
current
| ILO |
Value
Conditions
Unit
Min
Typ
Max
VIN = 0 V to VCC


10
µA
VOUT = 0 V to VCC,
CE = VIH or OE = VIH


10
µA
Operating power
supply current
ICC
CE = 0.2 V,
Other Inputs = VCC − 0.2 V/0.2 V,
tRC (Min), Ii/o = 0 mA

5
10
mA
Standby current
ISB
CE ≥ VCC

5
100
µA
High level output
voltage
VOH
IOH = − 100 µA
0.8 × VCC


V
Low level output
voltage
VOL
IOL = 1.0 mA


0.4
V
2. AC Characteristics
(1) Read cycle
(within recommended operating conditions)
Parameter
Symbol
Value
Min
Max
Read cycle time
tRC
235

CE active time
tCA
150
10,000
Read pulse width
tRP
150
10,000
Precharge time
tPC
85

Address setup time
tAS
0

Address hold time
tAH
25

CE access time
tCE

150
OE access time
tOE

150
CE output floating time
tHZ

25
OE output floating time
tOHZ

25
Unit
ns
5
MB85R256
(2) Write cycle
(within recommended operating conditions)
Parameter
Value
Symbol
Min
Max
Write cycle time
tWC
235

CE active time
tCA
150
10,000
Write pulse width
tWP
150
10,000
Precharge time
tPC
85

Address setup time
tAS
0

Address hold time
tAH
25

Data setup time
tDS
50

Data hold time
tDH
0

Write set up time
tWS
0

Write hold time
tWH
0

Unit
ns
(3) Power ON/OFF sequence
(within recommended operating conditions)
Parameter
Symbol
Value
Min
Typ
Max
Unit
CE LEVEL hold time at power OFF
tpd
85


ns
CE LEVEL hold time at power ON
tpu
85


ns
Power interval
tpi
1


µs
3. Pin Capacitance
Parameter
Symbol
Input capacitance
CIN
output capacitance
COUT
Conditions
VIN = VOUT = GND,
f = 1 MHz, TA = + 25 °C
4. AC Characteristics Test Condition
6
Power supply voltage
: 3.0 V to 3.6 V
Input voltage amplitude
: 0.3 V to 2.7 V
Input rising time
: 10 ns
Input falling time
: 10 ns
Input evaluation level
: 2.0 V/0.8 V
Output evaluation level
: 2.0 V/0.8 V
Output load
: 100 pF
Value
Unit
Min
Typ
Max


10
pF


10
pF
MB85R256
■ TIMING DIAGRAM
1. Read cycle (CE Control)
tRC
tPC
tPC
tCA
CE
tAS
A14 to A0
tAH
tAS
tAH
Valid
Valid
tRC
tPC
OE
tPC
tRP
tOE
I/O7 to I/O0
High-Z
Valid
tOHZ
High-Z
Valid
tHZ
tCE
WE
“H” level
: Don't care.
2. Read cycle (OE Control)
tRC
tPC
tPC
tCA
CE
tAS
A14 to A0
tAH
tAS
tAH
Valid
Valid
tRC
tPC
OE
tRP
tOE
I/O7 to I/O0
High-Z
Valid
tOHZ
High-Z
Valid
tHZ
tCE
WE
tPC
“H” level
: Don't care.
7
MB85R256
3. Write cycle (CE Control)
tWC
tPC
tPC
tCA
CE
tAS
A14 to A0
tAS
tAH
Valid
Valid
tWC
tPC
tWH
tAH
tWS
tPC
tWH
tWS
tWP
WE
tDS
tDS
tDH
Valid
Valid
Data In
tDH
OE
“H” level
: Don't care.
4. Write cycle (WE Control)
tWC
tPC
tPC
tCA
CE
tAS
A14 to A0
tPC
tDS
tPC
tWH
tWS
tDS
tDH
“H” level
: Don't care.
tDH
Valid
Valid
OE
8
tWC
tWP
WE
tAH
Valid
Valid
tWH
Data In
tAS
tAH
tWS
MB85R256
■ POWER ON/OFF SEQUENCE
tpd
tpi
tpu
VCC
VCC
3.0 V
3.0 V
VIH (Min)
VIH (Min)
1.0 V
1.0 V
VIL (Max)
0.2 V
GND
VIL (Max)
0.2 V
GND
CE > VCC × 0.8*
CE : Don't Care
CE > VCC × 0.8*
CE
CE
* : CE (Max) < VCC + 0.5 V
■ NOTES ON USE
After IR reflow, the hold of data that was written before IR reflow is not guaranteed.
■ ORDERING INFORMATION
Part number
MB85R256PF
MB85R256PFTN
Package
Remarks
28-pin, plastic SOP
(FPT-28P-M17)
28-pin, plastic TSOP(1)
(FPT-28P-M03)
9
MB85R256
■ PACKAGE DIMENSIONS
Note 1) *1 : These dimensions include resin protrusion.
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
28-pin plastic SOP
(FPT-28P-M17)
+0.25
+.010
+0.03
*1 17.75 –0.20 .699 –.008
0.17 –0.04
+.001
.007 –.002
15
28
11.80±0.30
(.465±.012)
*2 8.60±0.20
INDEX
(.339±.008)
Details of "A" part
2.65±0.15
(Mounting height)
(.104±.006)
0.25(.010)
1
1.27(.050)
14
0.47±0.08
(.019±.003)
0.13(.005)
"A"
0~8˚
M
0.80±0.20
(.031±.008)
0.88±0.15
(.035±.006)
0.20±0.15
(.008±.006)
(Stand off)
0.10(.004)
C
2002 FUJITSU LIMITED F28048S-c-3-4
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
(Continued)
10
MB85R256
(Continued)
28-pin plastic TSOP(1)
(FPT-28P-M03)
22
21
Details of "A" part
0.15(.006)
MAX
INDEX
28
LEAD No.
"A"
1
0.35(.014)
MAX
0.15(.006)
7
0.25(.010)
8
13.40±0.20
(.528±.008)
8.00±0.20
(.315±.008)
11.80±0.20
(.465±.008)
7.15(.281)REF
+0.10
1.10 –0.05
+.004
.043 –.002
(Mounting height)
0.15±0.05
(.006±.002)
0.10(.004)
12.40±0.20
(.488±.008)
C
0(0)MIN
(STAND OFF)
0.55(.0217)
TYP
0.50±0.10
(.020±.004)
0.20±0.10
(.008±.004)
0.09(.004)
M
1997 FUJITSU LIMITED F28018S-5C-3
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
11
MB85R256
FUJITSU LIMITED
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The contents of this document are subject to change without notice.
Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information, such as descriptions of function and application
circuit examples, in this document are presented solely for the
purpose of reference to show examples of operations and uses of
Fujitsu semiconductor device; Fujitsu does not warrant proper
operation of the device with respect to use based on such
information. When you develop equipment incorporating the
device based on such information, you must assume any
responsibility arising out of such use of the information. Fujitsu
assumes no liability for any damages whatsoever arising out of
the use of the information.
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function and schematic diagrams, shall not be construed as license
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from the use of information contained herein.
The products described in this document are designed, developed
and manufactured as contemplated for general use, including
without limitation, ordinary industrial use, general office use,
personal use, and household use, but are not designed, developed
and manufactured as contemplated (1) for use accompanying fatal
risks or dangers that, unless extremely high safety is secured, could
have a serious effect to the public, and could lead directly to death,
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reaction control in nuclear facility, aircraft flight control, air traffic
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extremely high reliability (i.e., submersible repeater and artificial
satellite).
Please note that Fujitsu will not be liable against you and/or any
third party for any claims or damages arising in connection with
above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You
must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and
equipment such as redundancy, fire protection, and prevention of
over-current levels and other abnormal operating conditions.
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
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of those products from Japan.
F0404
 FUJITSU LIMITED Printed in Japan