InGaAs-APD/Preamp Receiver FRM5W232BS FEATURES • 2.5Gb/s APD Receiver module in an industry standard mini-DIL package • High Sensitivity: -34 dBm (typ.) • High Differential Electrical Output • Power Overload: -4dBm (typ.) • Integral Thermistor and GaAs IC Preamp • Wide operating temperature range (-40 to +85°C) APPLICATIONS This APD detector preamp is intended to function as an optical receiver in long haul SONET, SDH, and DWDM systems operating up to 2.7Gb/s. The device operates in both the 1,310 and 1,550nm wavelength windows. The nominal 10KΩ integral thermistor allows accurate monitoring of the APD temperature and facilitates the design of the APD bias control circuits. The detector preamplifier is DC coupled and has a differential electrical output. DESCRIPTION The FRM5W232BS incorporates a 30 micron InGaAs Avalanche Photodiode (APD) detector, a GaAs IC transimpedance preamplifier, and a thermistor in a mini-DIL type package. The APD is processed with modern MOVPE techniques resulting in reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd: YAG welding techniques. The BS package is designed for a surface mount PC board assembly. ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified) Symbol Ratings Unit Storage Temperature Tstg -40 to +85 °C Operating Case Temperature Top -40 to +85 °C Supply Voltage VDD 0 to +4.5 V APD Reverse Voltage VR 0 to VB (Note) V APD Reverse Current IR(peak) 2 mA Parameter Note: Since the VB may vary from device to device, VB data is attached to each device for reference. . Edition 1.1 June 2002 1 InGaAs-APD/Preamp Receiver FRM5W232BS OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,310/1,550nm, VDD=+3.3V unless otherwise specified) 1,550nm, M=1 Min. 0.8 Limits Typ. 0.85 R13 1,310nm, M=1 0.75 VB ID=10µA Temperature Coefficient of VB γ (Note 1) AC Transimpedance Zt Parameter APD Responsivity APD Breakdown Voltage Bandwidth Equivalent Input Noise Current Density Sensitivity Symbol Test Conditions R15 BW in Pr AC-coupled, f=100MHz, RL=50Ω AC-Coupled, RL=50Ω, M=10, -3dBm from 1MHz AC-Coupled, RL=50Ω, Average in 1.8GHz 2.5Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10, Rext=-13dB, VR is set at optimum value Ta=25°C Ta=-40 to +85°C 2.5Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10, Rext=-13dB, VR is set at M=3, Ta=-40 to +85°C Unit Max. - A/W 0.85 - A/W 40 50 65 V 0.08 0.12 0.15 V/°C - 2.0 - kΩ 2.2 2.5 - GHz - 7.0 8.5 pA Hz - -34.0 -33.0 dBm - -33.0 -32.0 dBm -5 -4 - dBm Maximum Overload Po Optical Return Loss ORL 30 - - dB Power Supply Current ISS - - 70 mA Power Supply Voltage VDD 3.15 3.3 3.45 V Thermistor Resistance Rth 9.5 10 10.5 kΩ Thermistor B Constant B 3800 3900 4000 K Note: (1) γ=∆VB/∆Tc 2 InGaAs-APD/Preamp Receiver FRM5W232BS Notes 3 InGaAs-APD/Preamp Receiver FRM5W232BS “BS” PACKAGE UNIT: mm Detail of Lead ∅0.9±0.1 0.3±0.05 ∅4.1±0.2 (R 0. 1.2±0.07 24.1±2.0 L 0~10° 0.50±0.15 7) (0.5) (P2.54x3) 0.4±0.05 11.37±0.15 7.62±0.2 Pin Description (#1) (#8) (#4) (#5) Top View 1. VPD 2. GROUND 3. DATA 4. GROUND 5. THERMISTOR 6. -DATA 7. GROUND 8. VDD (0.5) 7.37±0.15 (2.0) 5.2MAX. Note The fiber length (L) shall be specified in the detail (individual) specification. Unit: mm 9.77±0.15 See Lead Detail For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. CAUTION 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. • Do not put this product into the mouth. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0302M200 4