TI BQ24108RHLRG4

bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
Size
bq24113, bq24113A, bq24115
Actual
4,5 mm x 3,5 mm
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
SYNCHRONOUS SWITCHMODE, LI-ION AND LI-POLYMER CHARGE-MANAGEMENT
IC WITH INTEGRATED POWER FETs (bqSWITCHER™)
The bqSWITCHER™ series are highly integrated
Li-ion
and
Li-polymer
switch-mode
charge
management devices targeted at a wide range of
portable applications. The bqSWITCHER™ series
offers integrated synchronous PWM controller and
power FETs, high-accuracy current and voltage
regulation, charge preconditioning, charge status, and
charge termination, in a small, thermally enhanced
QFN package. The system-controlled version
provides additional inputs for full charge management
under system control.
The bqSWITCHER charges the battery in three
phases: conditioning, constant current, and constant
voltage. Charge is terminated based on userselectable minimum current level. A programmable
charge timer provides a safety backup for charge
termination. The bqSWITCHER automatically restarts
the charge cycle if the battery voltage falls below an
internal threshold. The bqSWITCHER automatically
enters sleep mode when VCC supply is removed.
2
1
20 19
3
18
4
17
5
16
6
15
7
14
8
13
9 10
11 12
STAT2 or NC
PGND
PGND
CE
SNS
BAT
CELLS or FB or NC
TS
VTSB
STAT1
IN
IN
PG
VCC
TTC or CMODE
ISET1
ISET2
OUT
RHL PACKAGE
(TOP VIEW)
(bq24100, 03, 03A, 04, 05, 08, 09, 13, 13A, 15)
OUT
• Ideal For Highly Efficient Charger Designs For
Single-, Two- or Three-Cell Li-Ion and
Li-Polymer Battery Packs
• bq24105 Also for LiFePO4Battery (see Using
bq24105 to Charge the LiFePO4 Battery)
• Integrated Synchronous Fixed-Frequency
PWM Controller Operating at 1.1 MHz With 0%
to 100% Duty Cycle
• Integrated Power FETs For Up To 2-A Charge
Rate
• High-Accuracy Voltage and Current Regulation
• Available In Both Stand-Alone (Built-In Charge
Management and Control) and
System-Controlled (Under System Command)
Versions
• Status Outputs For LED or Host Processor
Interface Indicates Charge-In-Progress, Charge
Completion, Fault, and AC-Adapter Present
Conditions
• 20-V Maximum Voltage Rating on IN and OUT
Pins
• High-Side Battery Current Sensing
• Battery Temperature Monitoring
• Automatic Sleep Mode for Low Power
Consumption
• System-Controlled Version Can Be Used In
NiMH and NiCd Applications
• Reverse Leakage Protection Prevents Battery
Drainage
• Thermal Shutdown and Protection
• Built-In Battery Detection
• Available in 20-Pin, 3,5 mm × 4,5 mm QFN
Package
23
DESCRIPTION
VSS
FEATURES
1
APPLICATIONS
•
•
•
•
Handheld Products
Portable Media Players
Industrial and Medical Equipment
Portable Equipment
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
bqSWITCHER, PowerPAD are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
UNLESS OTHERWISE NOTED this document contains
PRODUCTION DATA information current as of publication date.
Products conform to specifications per the terms of Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2008, Texas Instruments Incorporated
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION (1)
TJ
CHARGE REGULATION VOLTAGE (V)
INTENDED APPLICATION
4.2 V
Stand-alone
1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V)
–40°C to 125°C
(1)
(2)
(3)
Stand-alone
1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V)
Stand-alone
1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V)
(Blinking status pins)
Stand-alone
Externally programmable (2.1 V to 15.5 V)
Stand-alone
4.2 V (Blinking status pins)
Stand-alone
1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V)
System-controlled
1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V)
System-controlled
Externally programmable (2.1 V to 15.5 V)
System-controlled
PART NUMBER (2) (3)
MARKINGS
bq24100RHLR
CIA
bq24100RHLT
CIA
bq24103RHLR
CID
bq24103RHLT
CID
bq24103ARHLR
CKO
bq24103ARHLT
CKO
bq24104RHLR
NXW
bq24104RHLT
NXW
bq24105RHLR
CIF
bq24105RHLT
CIF
bq24108RHLR
CIU
bq24109RHLR
CDY
bq24113RHLR
CIJ
bq24113RHLT
CIJ
bq24113ARHLR
CKF
bq24113ARHLT
CKF
bq24115RHLR
CIL
bq24115RHLT
CIL
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com.
The RHL package is available in the following options:
T – taped and reeled in quantities of 250 devices per reel
R – taped and reeled in quantities of 3000 devices per reel
This product is RoHS-compatible, including a lead concentration that does not exceed 0.1% of total product weight, and is suitable for
use in specified lead-free soldering processes.
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
UNIT
Supply voltage range (with respect to VSS)
Input voltage range (with respect to VSS and PGND)
IN, VCC
20 V
STAT1, STAT2, PG, CE, CELLS, SNS, BAT
–0.3 V to 20 V
OUT
–0.7 V to 20 V
CMODE, TS, TTC
7V
VTSB
3.6 V
ISET1, ISET2
3.3 V
Voltage difference between SNS and BAT inputs (VSNS – VBAT)
±1 V
Output sink
STAT1, STAT2, PG
10 mA
Output current (average)
OUT
2.2 A
TA
Operating free-air temperature range
–40°C to 85°C
TJ
Junction temperature range
–40°C to 125°C
Tstg
Storage temperature
–65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
(1)
2
300°C
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
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Copyright © 2004–2008, Texas Instruments Incorporated
Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
PACKAGE DISSIPATION RATINGS
(1)
PACKAGE
θJA
θJC
TA < 40°C
POWER RATING
DERATING FACTOR
ABOVE TA = 40°C
RHL (1)
46.87°C/W
2.5°C/W
1.81 W
0.021 W/°C
This data is based on using the JEDEC High-K board, and the exposed die pad is connected to a copper pad on the board. This is
connected to the ground plane by a 2x3 via matrix.
RECOMMENDED OPERATING CONDITIONS
MAX
UNIT
Supply voltage, VCC and IN (Tie together)
4.35 (1)
MIN
16 (2)
V
Operating junction temperature range, TJ
–40
125
°C
(1)
(2)
NOM
The IC continues to operate below Vmin, to 3.5 V, but the specifications are not tested and not specified.
The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the IN or OUT pins. A tight layout
minimizes switching noise.
ELECTRICAL CHARACTERISTICS
TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CURRENTS
VCC > VCC(min), PWM switching
I(VCC)
I(SLP)
VCC supply current
Battery discharge sleep current, (SNS,
BAT, OUT, FB pins)
10
VCC > VCC(min), PWM NOT switching
mA
5
VCC > VCC(min), CE = HIGH
315
0°C ≤ TJ ≤ 65°C, VI(BAT) = 4.2 V,
VCC < V(SLP) or VCC > V(SLP) but not in charge
3.5
0°C ≤ TJ ≤ 65°C, VI(BAT) = 8.4 V,
VCC < V(SLP) or VCC > V(SLP) but not in charge
5.5
0°C ≤ TJ ≤ 65°C, VI(BAT) = 12.6 V,
VCC < V(SLP) or VCC > V(SLP) but not in charge
7.7
µA
µA
VOLTAGE REGULATION
VOREG
VIBAT
CELLS = Low, in voltage regulation
4.2
CELLS = High, in voltage regulation
8.4
Output voltage, bq24100/08/09
Operating in voltage regulation
4.2
Feedback regulation REF for bq24105/15
only (W/FB)
IIBAT = 25 nA typical into pin
2.1
Output voltage, bq24103/03A/04/13/13A
Voltage regulation accuracy
TA = 25°C
V
V
–0.5%
0.5%
–1%
1%
150
2000
–10%
10%
CURRENT REGULATION - FAST CHARGE
IOCHARGE
Output current range of converter
VLOWV ≤ VI(BAT) < VOREG,
V(VCC) - VI(BAT) > V(DO-MAX)
mA
100 mV ≤ VIREG≤ 200 mV,
V
IREG
+
1V
RSET1
1000,
VIREG
Voltage regulated across R(SNS) Accuracy
V(ISET1)
Output current set voltage
V(LOWV) ≤ VI(BAT) ≤ VO(REG),
V(VCC) ≤ VI(BAT) × V(DO-MAX)
1
K(ISET1)
Output current set factor
VLOWV ≤ VI(BAT) < VO(REG) ,
V(VCC) ≤ VI(BAT) + V(DO-MAX)
1000
Programmed Where
5 kΩ ≤ RSET1 ≤ 10 kΩ, Select RSET1 to
program VIREG,
VIREG(measured) = IOCHARGE + RSNS
(–10% to 10% excludes errors due to RSET1
and R(SNS) tolerances)
V
V/A
PRECHARGE AND SHORT-CIRCUIT CURRENT REGULATION
VLOWV
Precharge to fast-charge transition voltage
threshold, BAT,
bq24100/03/03A/04/05/08/09 ICs only
Copyright © 2004–2008, Texas Instruments Incorporated
68
71.4
75
%VO(REG)
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
3
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated)
MIN
TYP
MAX
t
Deglitch time for precharge to fast charge
transition,
PARAMETER
Rising voltage;
tRISE, tFALL = 100 ns, 2-mV overdrive
TEST CONDITIONS
UNIT
20
30
40
ms
IOPRECHG
Precharge range
VI(BAT) < VLOWV, t < tPRECHG
15
200
mA
V(ISET2)
Precharge set voltage, ISET2
VI(BAT) < VLOWV, t < tPRECHG
K(ISET2)
Precharge current set factor
100
mV
1000
V/A
100 mV ≤ VIREG-PRE ≤ 100 mV,
V
VIREG-PRE
Voltage regulated across RSNS-Accuracy
IREG*PRE
+ 0.1V
RSET2
1000,
(PGM) Where
1.2 kΩ ≤ RSET2 ≤ 10 kΩ, Select RSET1
to program VIREG-PRE,
VIREG-PRE (Measured) = IOPRE-CHG × RSNS
(–20% to 20% excludes errors due to RSET1
and RSNS tolerances)
–20%
20%
15
200
CHARGE TERMINATION (CURRENT TAPER) DETECTION
ITERM
Charge current termination detection range
VI(BAT) > VRCH
VTERM
Charge termination detection set voltage,
ISET2
VI(BAT) > VRCH
K(ISET2)
Termination current set factor
tdg-TERM
100
mV
1000
Charger termination accuracy
VI(BAT) > VRCH
Deglitch time for charge termination
Both rising and falling,
2-mV overdrive tRISE, tFALL = 100 ns
–20%
mA
V/A
20%
20
30
40
ms
TEMPERATURE COMPARATOR AND VTSB BIAS REGULATOR
%LTF
Cold temperature threshold, TS, % of bias
VLTF = VO(VTSB) × % LTF/100
72.8%
73.5%
74.2%
%HTF
Hot temperature threshold, TS, % of bias
VHTF = VO(VTSB) × % HTF/100
33.7%
34.4%
35.1%
%TCO
Cutoff temperature threshold, TS, % of
bias
VTCO = VO(VTSB) × % TCO/100
28.7%
29.3%
29.9%
0.5%
1%
1.5%
20
30
40
LTF hysteresis
Deglitch time for temperature fault, TS
Both rising and falling,
2-mV overdrive tRISE, tFALL = 100 ns
tdg-TS
Deglitch time for temperature fault, TS,
bq24109, bq24104
VO(VTSB)
TS bias output voltage
VCC > VIN(min),
I(VTSB) = 10 mA 0.1 µF ≤ CO(VTSB) ≤ 1 µF
VO(VTSB)
TS bias voltage regulation accuracy
VCC > IN(min),
I(VTSB) = 10 mA 0.1 µF ≤ CO(VTSB) ≤ 1 µF
ms
500
3.15
–10%
V
10%
BATTERY RECHARGE THRESHOLD
VRCH
tdg-RCH
Recharge threshold voltage
Below VOREG
75
100
125
mV/cell
Deglitch time
VI(BAT) < decreasing below threshold,
tFALL = 100 ns 10-mV overdrive
20
30
40
ms
STAT1, STAT2, AND PG OUTPUTS
VOL(STATx)
Low-level output saturation voltage, STATx
IO = 5 mA
0.5
VOL(PG)
Low-level output saturation voltage, PG
IO = 10 mA
0.1
V
CE CMODE, CELLS INPUTS
VIL
Low-level input voltage
IIL = 5 µA
VIH
High-level input voltage
IIH = 20 µA
0
0.4
1.3
VCC
V
TTC INPUT
tPRECHG
Precharge timer
tCHARGE
Programmable charge timer range
t(CHG) = C(TTC) × K(TTC)
Charge timer accuracy
0.01 µF ≤ C(TTC) ≤ 0.18 µF
KTTC
Timer multiplier
CTTC
Charge time capacitor range
VTTC_EN
TTC enable threshold voltage
4
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1440
1800
25
-10%
2160
s
572
minutes
10%
2.6
0.01
V(TTC) rising
min/nF
0.22
200
µF
mV
Copyright © 2004–2008, Texas Instruments Incorporated
Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
ELECTRICAL CHARACTERISTICS (continued)
TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SLEEP COMPARATOR
VSLP-ENT
Sleep-mode entry threshold
VSLP-EXIT
Sleep-mode exit hysteresis,
tdg-SLP
Deglitch time for sleep mode
2.3 V ≤ VI(OUT) ≤ VOREG, for 1 or 2 cells
VCC ≤ VIBAT
+5 mV
VCC ≤ VIBAT
+75 mV
VI(OUT) = 12.6 V, RIN = 1 kΩ
bq24105/15 (1)
VCC ≤ VIBAT
-4 mV
VCC ≤ VIBAT
+73 mV
40
160
2.3 V ≤ VI(OUT)≤ VOREG
VCC decreasing below threshold,
tFALL = 100 ns, 10-mV overdrive,
PMOS turns off
VCC decreasing below threshold,
tFALL = 100 ns, 10-mV overdrive,
STATx pins turn off
V
mV
µs
5
20
30
40
3.50
ms
UVLO
VUVLO-ON
IC active threshold voltage
VCC rising
3.15
3.30
IC active hysteresis
VCC falling
120
150
V
mV
PWM
Internal P-channel MOSFET on-resistance
Internal N-channel MOSFET on-resistance
fOSC
7 V ≤ VCC ≤ VCC(max)
400
4.5 V ≤ VCC ≤ 7 V
500
7 V ≤ VCC ≤ VCC(max)
130
4.5 V ≤ VCC ≤ 7 V
mΩ
150
Oscillator frequency
1.1
Frequency accuracy
–9%
MHz
9%
DMAX
Maximum duty cycle
DMIN
Minimum duty cycle
100%
tTOD
Switching delay time (turn on)
20
ns
tsyncmin
Minimum synchronous FET on time
60
ns
0%
Synchronous FET minimum current-off
threshold (2)
50
400
mA
BATTERY DETECTION
IDETECT
Battery detection current during time-out
fault
VI(BAT) < VOREG – VRCH
IDISCHRG1
Discharge current
tDISCHRG1
Discharge time
IWAKE
tWAKE
2
mA
VSHORT < VI(BAT) < VOREG – VRCH
400
µA
VSHORT < VI(BAT) < VOREG – VRCH
1
s
Wake current
VSHORT < VI(BAT) < VOREG – VRCH
2
mA
Wake time
VSHORT < VI(BAT) < VOREG – VRCH
0.5
s
IDISCHRG2
Termination discharge current
Begins after termination detected,
VI(BAT) ≤ VOREG
400
µA
tDISCHRG2
Termination time
262
ms
OUTPUT CAPACITOR
COUT
Required output ceramic capacitor range
from SNS to PGND, between inductor and
RSNS
CSNS
Required SNS capacitor (ceramic) at SNS
pin
4.7
10
µF
47
µF
0.1
PROTECTION
Threshold over VOREG to turn off P-channel
MOSFET, STAT1, and STAT2 during charge
or termination states
110
117
2.6
3.6
4.5
A
Short-circuit voltage threshold, BAT
VI(BAT) falling
1.95
2
2.05
V/cell
ISHORT
Short-circuit current
VI(BAT) ≤ VSHORT
TSHTDWN
Thermal trip
VOVP
OVP threshold voltage
ILIMIT
Cycle-by-cycle current limit
VSHORT
Thermal hysteresis
(1)
(2)
35
121
%VO(REG)
65
mA
165
°C
10
°C
For bq24105 and bq24115 only. RIN is connected between IN and PGND pins and needed to ensure sleep entry.
N-channel always turns on for ~60 ns and then turns off if current is too low.
Copyright © 2004–2008, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
5
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
TERMINAL FUNCTIONS
TERMINAL
bq24100,
bq24108,
bq24109
bq24103,
bq24103A
bq24104
bq24105
bq24113,
bq24113A
bq24115
BAT
14
14
14
14
14
I
Battery voltage sense input. Bypass it with a 0.1 µF capacitor to PGND if
there are long inductive leads to battery.
CE
16
16
16
16
16
I
Charger enable input. This active low input, if set high, suspends charge
and places the device in the low-power sleep mode. Do not pull up this
input to VTSB.
I
Available on parts with fixed output voltage. Ground or float for single-cell
operation (4.2 V). For two-cell operation (8.4 V) pull up this pin with a
resistor to VCC.
7
I
Charge mode selection: low for precharge as set by ISET2 pin and high
(pull up to VTSB or <7 V) for fast charge as set by ISET1.
13
I
Output voltage analog feedback adjustment. Connect the output of a
resistive voltage divider powered from the battery terminals to this node to
adjust the output battery voltage regulation.
Charger input voltage.
NAME
CELLS
13
13
CMODE
7
FB
IN
13
I/O
DESCRIPTION
3, 4
3, 4
3, 4
3, 4
3, 4
I
ISET1
8
8
8
8
8
I/O
Charger current set point 1 (fast charge). Use a resistor to ground to set
this value.
ISET2
9
9
9
9
9
I/O
Charge current set point 2 (precharge and termination), set by a resistor
connected to ground. A low-level CMODE signal selects the ISET2 charge
rate, but if the battery voltage reaches the regulation set point,
bqSWITCHER changes to voltage regulation regardless of CMODE input.
N/C
13
19
19
-
No connection. This pin must be left floating in the application.
Charge current output inductor connection. Connect a zener TVS diode
between OUT pin and PGND pin to clamp the voltage spike to protect the
power MOSFETs during abnormal conditions.
1
1
1
1
1
O
20
20
20
20
20
O
5
5
5
5
5
O
17,18
17,18
17,18
17,18
17, 18
SNS
15
15
15
15
15
I
Charge current-sense input. Battery current is sensed via the voltage drop
developed on this pin by an external sense resistor in series with the
battery pack. A 0.1-µF capacitor to PGND is required.
STAT1
2
2
2
2
2
O
Charge status 1 (open-drain output). When the transistor turns on
indicates charge in process. When it is off and with the condition of STAT2
indicates various charger conditions (See Table 1)
STAT2
19
19
19
O
Charge status 2 (open-drain output). When the transistor turns on
indicates charge is done. When it is off and with the condition of STAT1
indicates various charger conditions (See Table 1)
TS
12
12
12
I
Temperature sense input. This input monitors its voltage against an
internal threshold to determine if charging is allowed. Use an NTC
thermistor and a voltage divider powered from VTSB to develop this
voltage. (See Figure 10)
TTC
7
7
7
I
Timer and termination control. Connect a capacitor from this node to GND
to set the bqSWITCHER timer. When this input is low, the timer and
termination detection are disabled.
I
Analog device input. A 0.1 µF capacitor to VSS is required.
OUT
PG
PGND
12
12
VCC
6
6
6
6
6
VSS
10
10
10
10
10
VTSB
11
11
11
11
11
Exposed
Thermal
Pad
6
Pad
Pad
Pad
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Pad
Pad
Power-good status output (open drain). The transistor turns on when a
valid VCC is detected. It is turned off in the sleep mode. PG can be used to
drive a LED or communicate with a host processor.
Power ground input
Analog ground input
O
TS internal bias regulator voltage. Connect capacitor (with a value
between a 0.1-µF and 1-µF) between this output and VSS.
There is an internal electrical connection between the exposed thermal
pad and VSS. The exposed thermal pad must be connected to the same
potential as the VSS pin on the printed circuit board. The power pad can
be used as a star ground connection between VSS and PGND. A common
ground plane may be used. VSS pin must be connected to ground at all
times.
Copyright © 2004–2008, Texas Instruments Incorporated
Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
TYPICAL APPLICATION CIRCUITS
LOUT
BQ24100
VIN
CIN
1.5 KW
10 mF
1.5 KW
Adapter
Present
1.5 KW
Done
3
Charge
IN
OUT 1
4
IN
6
VCC
2
STAT1 PGND 18
RSNS
10 mH
OUT 20
COUT
D1
PGND 17
Battery
Pack
Pack+
0.1W
10 mF
Pack-
MMBZ18VALT1
103AT
19 STAT2
5
PG
7
TTC
SNS 15
BAT 14
ISET1 8
7.5 KW RISET1
VTSB
7.5 KW
CTTC
16 CE
ISET2 9
0.1 mF
10 VSS
9.31 KW
RT1
442 KW
RT2
RISET2
TS 12
13 NC
VTSB 11
0.1 mF
0.1 mF
0.1 mF
Figure 1. Stand-Alone 1-Cell Application
BQ24103
BQ24104
VIN
CIN
1.5 KW
10 mF
1.5 KW
Adapter
Present
1.5 KW
Done
Charge
LOUT
3
IN
OUT 1
4
IN
OUT 20
6
VCC
RSNS
10 mH
COUT
D1
Pack+
0.1W
10 mF
Pack-
MMBZ18VALT1
PGND 17
(see Note A)
2
Battery
Pack
103AT
STAT1 PGND 18
19 STAT2
5
PG
7
TTC
SNS 15
BAT 14
ISET1 8
7.5 KW RISET1
VTSB
7.5 KW
CTTC
16 CE
ISET2 9
0.1 mF
10 VSS
0.1 mF
9.31 KW
RT1
442 KW
RT2
RISET2
TS 12
13 CELLS
VTSB 11
0.1 mF
0.1 mF
VIN
10 kW
A.
Zener diode not needed for bq24103A and bq24104.
Figure 2. Stand-Alone 2-Cell Application
Copyright © 2004–2008, Texas Instruments Incorporated
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
7
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
TYPICAL APPLICATION CIRCUITS (continued)
LOUT
BQ24105
VIN
1.5 KW
10 mF
CIN
1.5 KW
Adapter
Present
1.5 KW
Done
3
Charge
IN
OUT 1
4
IN
6
VCC
2
STAT1 PGND 18
RSNS
10 mH
OUT 20
COUT
D1
Battery
Pack
Pack+
0.1W
10 mF
Pack-
MMBZ18VALT1
PGND 17
103AT
19 STAT2
5
PG
7
TTC
SNS 15
BAT 14
7.5 KW RISET1
ISET1 8
VTSB
7.5 KW
CTTC
16 CE
ISET2 9
10 VSS
0.1 mF
9.31 KW
RT1
442 KW
RT2
RISET2
0.1 mF
TS 12
13 FB
VTSB 11
0.1 mF
301 KW
0.1 mF
100 KW
Figure 3. Stand-Alone 2-Cell Application
BQ24113,
BQ24113A
VIN
3
IN
OUT 1
4
IN
OUT 20
6
VCC
2
STAT1 PGND 18
LOUT
10 mH
0.1 mF
CIN
10 mF
RSNS
COUT
D1
0.1W
10 mF
Pack+
Pack-
MMBZ18VALT1
PGND 17
(see Note A)
19 NC
Battery
Pack
103AT
SNS 15
5
PG
BAT 14
7
CMODE ISET1 8
7.5 KW RISET1
VTSB
7.5 KW
16 CE
10 VSS
13 CELLS
ISET2 9
9.31 KW
RT1
442 KW
RT2
RISET2
TS 12
VTSB 11
0.1 mF
0.1 mF
TO HOST CONTROLLER
A.
Zener diode not needed for bq24113A.
Figure 4. System-Controlled Application
8
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
TYPICAL OPERATING PERFORMANCE
EFFICIENCY
vs
CHARGE CURRENT
EFFICIENCY
vs
CHARGE CURRENT
100
100
VI = 9 V
90
90
VI = 5 V
Efficiency - %
Efficiency - %
VI = 16 V
80
VI = 16 V
70
V(BAT) = 4.2 V
1-Cell
60
80
70
V(BAT) = 8.4 V
2-Cell
60
50
50
0
0.5
1
1.5
I(BAT) - Charge Current - A
Figure 5.
Copyright © 2004–2008, Texas Instruments Incorporated
2
0
0.5
1
1.5
2
I(BAT) - Charge Current - A
Figure 6.
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bq24115
9
10
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VCC
Term &
Timer
Disable
VCC
VTSB
VCC
VSS
TTC
STAT2
STAT1
CE
PG
VTSB
VCC
IN
IN
0.5V
1V
Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
CE
CHARGE
50 mV
BAT
TERM
OVP
Charge
(STATE
MACHINE)
TIMER
FF CHAIN
PRE-CHG
TIMEOUT
TIMER CLK
*Patent Pending #36889
TG
CONTROL
LOGIC
DSABL_TERM
PRE-CHARGE
WAKE
DISCHARGE
0.75V
bq2410x
VCC
V(3.6A)
Icntrl
Sense FET
VCC-6V
Poff VCC PG
2.1V
0.25V
SLEEP
VCC-6V
bqSWITCHER
VCC
VTSB
Voltage
Reference
Vuvlo UVLO/POR
POR
CHARGE
SLEEP
+
-
VIN
Protection PMOS FET is OFF when not charging
or in SLEEP to prevent discharge of battery
when IN < BAT
OVP
MOD
FAST CHG
TIMEOUT
RESET
SLEEP
SYNCH
PkILim
VSHORT
BAT_PRS_
disch
LowV
Term_Det
Vrch
UVLO/
POR
SUSPEND
6V
VCC-6V
VCC
BG
VSHORT
LowV 30ms
Dgltch
BAT_PRS_dischg
Vovp
Q R
Q S
I
2.1V
BAT
VCC
+
-
SNS+
1V
TS
SPIN
SUSPEND
FASTCHG
Disable
BAT
20uA
VCC
Ibat Reg
+
-
+
-
+
-
TCO
HTF
LTF
30ms
dgltch
PRE-CHG
Disable
0.1V
FASTCHG
Disable
TEMP
SUSPEND
0.1V
SNS
+
1k
-
TERM
SLEEP
SUSPEND
1V
Vbat Reg
+
2.1V
20uA
VCC
VCC
RAMP
(Vpp=VCC/10)
VCC
RAMP
OSC
VCC/10
*
COMPENSATION
Discharge
Charge
Wake
Vrch 30ms
Dgltch
Vreg
BAT
CLAMP
Synch
Gate
Drive
TG
+
V(150 mA)
Isynch
PkILim or OVP
TIMEOUT FAULT
SUSPEND
TERM
UVLO/POR
MOD
OVP
SYNCH
TIMEOUT
PkILim
BG
Sense FET
1C
2C
FB
SPIN
BAT
1k
Term_Det
VTSB
+
-
10
Co
10 F
H
Lo
Rsns
TS
ISET2
ISET1
VTSB
RSET2
RSET1
FB
CELLS (bq24103/04/13)
FB (bq24105/15)
N/C (bq24100)
VTSB
BAT
SNS
PGND
PGND
OUT
OUT
to FB
FB
SPIN
ONLY
+
Pack+
Temp
Pack-
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
FUNCTIONAL BLOCK DIAGRAM
Copyright © 2004–2008, Texas Instruments Incorporated
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
OPERATIONAL FLOW CHART
POR
Check for Battery
Presence
Battery
Detect?
No
Indicate BATTERY
ABSENT
Yes
Suspend Charge
TS Pin
in LTF to HTF
Range?
No
Indicate CHARGE
SUSPEND
Yes
VBAT <VLOWV
Yes
Regulate
IPRECHG
Reset and Start
T30min timer
Indicate ChargeIn-Progress
No
Suspend Charge
Reset and Start
FSTCHG timer
TS pin
in LTF to TCO
range?
Regulate
Current or Voltage
Yes
No
Indicate CHARGE
SUSPEND
No
TS pin
in LTF to HTF
range?
Indicate ChargeIn-Progress
No
VBAT <VLOWV
Suspend Charge
TS Pin
in LTF to TCO
Range?
Yes
Yes
No
Indicate CHARGE
SUSPEND
Yes
No
T30min
Expired?
No
TS pin
in LTF to HTF
range?
FSTCHG Timer
Expired?
No
Yes
Yes
Yes
VBAT <VLOWV
Yes
No
- Fault Condition
- Enable I DETECT
No
ITERM detection?
Indicate Fault
No
Yes
Battery
Replaced?
(Vbat < Vrch?)
- Turn Off Charge
- Enable I DISCHG for
tDISCHG2
Indicate ChargeIn-Progress
*NOTE: If the TTC pin is
pulled low, the safety timer
and termination are
disabled; the charger
continues to regulate, and
the STAT pins indicate
charge in progress.
Yes
Charge Complete
VBAT < VRCH ?
If the TTC pin is pulled high
(VTSB), only the safety
timer is disabled
(termination is normal).
No
Indicate DONE
*
Battery Removed
Yes
Indicate BATTERY
ABSENT
Figure 7. Stand-Alone Version Operational Flow Chart
Copyright © 2004–2008, Texas Instruments Incorporated
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bq24115
11
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
POR
SLEEP MODE
Vcc > VI(BAT)
Checked at All
Times
No
No
Indicate SLEEP
MODE
Yes
/CE=Low
Yes
Regulate
IO(PRECHG)
CMODE=Low
Yes
Indicate ChargeIn-Progress
No
Yes
/CE=High
No
Regulate Current
or Voltage
Indicate ChargeIn-Progress
Yes
Yes
CMODE=High
or
VIBAT in VREG
Yes
No
CMODE=Low
No
No
/CE=High
Yes
Turn Off Charge
Indicate DONE
Yes
No
/CE=Low
Yes
Figure 8. System-Controlled Operational Flow Chart
12
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Copyright © 2004–2008, Texas Instruments Incorporated
Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
DETAILED DESCRIPTION
The bqSWITCHER™ supports a precision Li-ion or Li-polymer charging system for one-, two-, or three-cell
applications. See Figure 7 and Figure 8 for a typical charge profile.
Precharge
Phase
Voltage Regulation and
Charge Termination Phase
Current Regulation Phase
Regulation Voltage
Regulation Current
Charge Voltage
VLOW
VSHORT
Charge Current
Precharge
and Termination
ISHORT
Programmable
Safety Timer
Precharge
Timer
UDG-04037
Figure 9. Typical Charging Profile
PWM Controller
The bq241xx provides an integrated fixed 1MHz frequency voltage-mode controller with Feed-Forward function
to regulate charge current or voltage. This type of controller is used to help improve line transient response,
thereby simplifying the compensation network used for both continuous and discontinuous current conduction
operation. The voltage and current loops are internally compensated using a Type-III compensation scheme that
provides enough phase boost for stable operation, allowing the use of small ceramic capacitors with very low
ESR. There is a 0.5V offset on the bottom of the PWM ramp to allow the device to operate between 0% to 100%
duty cycle.
The internal PWM gate drive can directly control the internal PMOS and NMOS power MOSFETs. The high-side
gate voltage swings from VCC (when off), to VCC-6 (when on and VCC is greater than 6V) to help reduce the
conduction losses of the converter by enhancing the gate an extra volt beyond the standard 5V. The low-side
gate voltage swings from 6V, to turn on the NMOS, down to PGND to turn it off. The bq241xx has two back to
back common-drain P-MOSFETs on the high side. An input P-MOSFET prevents battery discharge when IN is
lower than BAT. The second P-MOSFET behaves as the switching control FET, eliminating the need of a
bootstrap capacitor.
Cycle-by-cycle current limit is sensed through the internal high-side sense FET. The threshold is set to a nominal
3.6A peak current. The low-side FET also has a current limit that decides if the PWM Controller will operate in
synchronous or non-synchronous mode. This threshold is set to 100mA and it turns off the low-side NMOS
before the current reverses, preventing the battery from discharging. Synchronous operation is used when the
current of the low-side FET is greater than 100mA to minimize power losses.
Copyright © 2004–2008, Texas Instruments Incorporated
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bq24115
13
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
Temperature Qualification
The bqSWITCHER continuously monitors battery temperature by measuring the voltage between the TS pin and
VSS pin. A negative temperature coefficient thermistor (NTC) and an external voltage divider typically develop
this voltage. The bqSWITCHER compares this voltage against its internal thresholds to determine if charging is
allowed. To initiate a charge cycle, the battery temperature must be within the V(LTF)-to-V(HTF) thresholds. If
battery temperature is outside of this range, the bqSWITCHER suspends charge and waits until the battery
temperature is within the V(LTF)-to-V(HTF) range. During the charge cycle (both precharge and fast charge), the
battery temperature must be within the V(LTF)-to-V(TCO) thresholds. If battery temperature is outside of this range,
the bqSWITCHER suspends charge and waits until the battery temperature is within the V(LTF)-to-V(HTF) range.
The bqSWITCHER suspends charge by turning off the PWM and holding the timer value (i.e., timers are not
reset during a suspend condition). Note that the bias for the external resistor divider is provided from the VTSB
output. Applying a constant voltage between the V(LTF)-to-V(HTF) thresholds to the TS pin disables the
temperature-sensing feature.
VO(VTSB) ´ RTHCOLD ´ RTHHOT ´
1 - 1
VLTF
VHTF
RT2 =
RTHHOT ´
(
VO(VTSB)
-1
VHTF
VO(VTSB)
-1
VLTF
)
- RTHCOLD ´
(
VO(VTSB)
-1
VLTF
)
Where:
VLTF = VO(VTSB) ´ % LTF¸100 / 100
VHTF = VO(VTSB) ´ % HTF¸100 / 100
RT1 =
1 +
1
RT2 RTHCOLD
(1)
VCC
Charge Suspend
Charge Suspend
V(LTF)
Temperature Range
to Initiate Charge
V(HTF)
V(TCO)
Charge Suspend
Temperature Range
During Charge Cycle
Charge Suspend
VSS
Figure 10. TS Pin Thresholds
Battery Preconditioning (Precharge)
On power up, if the battery voltage is below the VLOWV threshold, the bqSWITCHER applies a precharge current,
IPRECHG, to the battery. This feature revives deeply discharged cells. The bqSWITCHER activates a safety timer,
tPRECHG, during the conditioning phase. If the VLOWV threshold is not reached within the timer period, the
bqSWITCHER turns off the charger and enunciates FAULT on the STATx pins. In the case of a FAULT
condition, the bqSWITCHER reduces the current to IDETECT. IDETECT is used to detect a battery replacement
condition. Fault condition is cleared by POR or battery replacement.
14
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
The magnitude of the precharge current, IO(PRECHG), is determined by the value of programming resistor, R(ISET2),
connected to the ISET2 pin.
K (ISET2) V (ISET2)
I O(PRECHG) +
ǒR(ISET2) R(SNS)Ǔ
(2)
where
RSNS is the external current-sense resistor
V(ISET2) is the output voltage of the ISET2 pin
K(ISET2) is the V/A gain factor
V(ISET2) and K(ISET2) are specified in the Electrical Characteristics table.
Battery Charge Current
The battery charge current, IO(CHARGE), is established by setting the external sense resistor, R(SNS), and the
resistor, R(ISET1), connected to the ISET1 pin.
In order to set the current, first choose R(SNS) based on the regulation threshold VIREG across this resistor. The
best accuracy is achieved when the VIREG is between 100mV and 200mV.
V IREG
R (SNS) +
I OCHARGE
(3)
If the results is not a standard sense resistor value, choose the next larger value. Using the selected standard
value, solve for VIREG. Once the sense resistor is selected, the ISET1 resistor can be calculated using the
following equation:
K
V ISET1
R ISET1 + ISET1
RSNS I CHARGE
(4)
Battery Voltage Regulation
The voltage regulation feedback occurs through the BAT pin. This input is tied directly to the positive side of the
battery pack. The bqSWITCHER monitors the battery-pack voltage between the BAT and VSS pins. The
bqSWITCHER is offered in a fixed single-cell voltage version (4.2 V) and as a one-cell or two-cell version
selected by the CELLS input. A low or floating input on the CELLS selects single-cell mode (4.2 V) while a
high-input through a resistor selects two-cell mode (8.4 V).
For the bq24105 and bq24115, the output regulation voltage is specified as:
(R1 + R2)
VOREG =
R2 x VIBAT
(5)
where R1 and R2 are resistor divider from BAT to FB and FB to VSS, respectively.
The bq24105 and bq24115 recharge threshold voltage is specified as:
(R1 + R2)
VRCH =
R2 x 50 mV
Copyright © 2004–2008, Texas Instruments Incorporated
(6)
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
15
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
Charge Termination and Recharge
The bqSWITCHER monitors the charging current during the voltage regulation phase. Once the termination
threshold, ITERM, is detected, the bqSWITCHER terminates charge. The termination current level is selected by
the value of programming resistor, R(ISET2), connected to the ISET2 pin.
K (ISET2) V TERM
I TERM +
ǒR(ISET2) R(SNS)Ǔ
(7)
where
R(SNS) is the external current-sense resistor
VTERM is the output of the ISET2 pin
K(ISET2) is the A/V gain factor
VTERM and K(ISET2) are specified in the Electrical Characteristics table
As a safety backup, the bqSWITCHER also provides a programmable charge timer. The charge time is
programmed by the value of a capacitor connected between the TTC pin and GND by the following formula:
t CHARGE + C(TTC) K(TTC)
(8)
where
C(TTC) is the capacitor connected to the TTC pin
K(TTC) is the multiplier
A
•
•
•
•
new charge cycle is initiated when one of the following conditions is detected:
The battery voltage falls below the VRCH threshold.
Power-on reset (POR), if battery voltage is below the VRCH threshold
CE toggle
TTC pin, described as follows.
In order to disable the charge termination and safety timer, the user can pull the TTC input below the VTTC_EN
threshold. Going above this threshold enables the termination and safety timer features and also resets the timer.
Tying TTC high disables the safety timer only.
16
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Copyright © 2004–2008, Texas Instruments Incorporated
Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
Sleep Mode
The bqSWITCHER enters the low-power sleep mode if the VCC pin is removed from the circuit. This feature
prevents draining the battery during the absence of VCC.
Charge Status Outputs
The open-drain STAT1 and STAT2 outputs indicate various charger operations as shown in Table 1. These
status pins can be used to drive LEDs or communicate to the host processor. Note that OFF indicates that the
open-drain transistor is turned off.
Table 1. Status Pins Summary
STAT1
STAT2
Charge-in-progress
Charge State
ON
OFF
Charge complete
OFF
ON
Charge suspend, timer fault, overvoltage, sleep mode, battery absent
OFF
OFF
Table 2. Status Pins Summary (bq24104, bq24108 and bq24109 only)
Charge State
STAT1
STAT2
OFF
OFF
Charge-in-progress
ON
OFF
Charge complete
OFF
ON
Battery over discharge, VI(BAT) < V(SC)
ON/OFF (0.5 Hz)
OFF
Charge suspend (due to TS pin and internal thermal protection)
ON/OFF (0.5 Hz)
OFF
Precharge timer fault
ON/OFF (0.5 Hz)
OFF
Fast charge timer fault
ON/OFF (0.5 Hz)
OFF
OFF
OFF
Battery absent
Sleep mode
PG Output
The open-drain PG (power good) indicates when the AC-to-DC adapter (i.e., VCC) is present. The output turns on
when sleep-mode exit threshold, VSLP-EXIT, is detected. This output is turned off in the sleep mode. The PG pin
can be used to drive an LED or communicate to the host processor.
CE Input (Charge Enable)
The CE digital input is used to disable or enable the charge process. A low-level signal on this pin enables the
charge and a high-level VCC signal disables the charge. A high-to-low transition on this pin also resets all timers
and fault conditions. Note that the CE pin cannot be pulled up to VTSB voltage. This may create power-up
issues.
Copyright © 2004–2008, Texas Instruments Incorporated
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
17
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
Timer Fault Recovery
As shown in FIGURE 10, bqSWITCHER provides a recovery method to deal with timer fault conditions. The
following summarizes this method.
Condition 1 VI(BAT) above recharge threshold (VOREG - VRCH) and timeout fault occurs.
Recovery method: bqSWITCHER waits for the battery voltage to fall below the recharge threshold. This could
happen as a result of a load on the battery, self-discharge or battery removal. Once the battery falls below the
recharge threshold, the bqSWITCHER clears the fault and enters the battery absent detection routine. A POR or
CE toggle also clears the fault.
Condition 2 Charge voltage below recharge threshold (VOREG – VRCH) and timeout fault occurs
Recovery method: Under this scenario, the bqSWITCHER applies the IDETECT current. This small current is used
to detect a battery removal condition and remains on as long as the battery voltage stays below the recharge
threshold. If the battery voltage goes above the recharge threshold, then the bqSWITCHER disables the IDETECT
current and executes the recovery method described in Condition 1. Once the battery falls below the recharge
threshold, the bqSWITCHER clears the fault and enters the battery absent detection routine. A POR or CE toggle
also clears the fault.
Output Overvoltage Protection (Applies To All Versions)
The bqSWITCHER provides a built-in overvoltage protection to protect the device and other components against
damages if the battery voltage gets too high, as when the battery is suddenly removed. When an overvoltage
condition is detected, this feature turns off the PWM and STATx pins. The fault is cleared once VIBAT drops to the
recharge threshold (VOREG – VRCH).
Functional Description for System-Controlled Version (bq2411x)
For applications requiring charge management under the host system control, the bqSWITCHER (bq2411x)
offers a number of control functions. The following section describes these functions.
Precharge And Fast-Charge Control
A low-level signal on the CMODE pin forces the bqSWITCHER to charge at the precharge rate set on the ISET2
pin. A high-level signal forces charge at fast-charge rate as set by the ISET1 pin. If the battery reaches the
voltage regulation level, VOREG, the bqSWITCHER transitions to voltage regulation phase regardless of the status
of the CMODE input.
Charge Termination And Safety Timers
The charge timers and termination are disabled in the system-controlled versions of the bqSWITCHER. The host
system can use the CE input to enable or disable charge. When an overvoltage condition is detected, the
charger process stops, and all power FETs are turned off.
Inductor, Capacitor, and Sense Resistor Selection Guidelines
The bqSWITCHER provides internal loop compensation. With this scheme, best stability occurs when LC
resonant frequency, fo is approximately 16 kHz (8 kHz to 32 kHz). Equation 9 can be used to calculate the value
of the output inductor and capacitor. Table 3 provides a summary of typical component values for various charge
rates.
1
f0 +
2p ǸL OUT C OUT
(9)
Table 3. Output Components Summary
0.5 A
1A
2A
Output inductor, LOUT
CHARGE CURRENT
22 µH
10 µH
4.7 µH
Output capacitor, COUT
4.7 µF
10 µF
22 µF (or 2 × 10 µF) ceramic
Sense resistor, R(SNS)
0.2 Ω
0.1 Ω
0.05 Ω
18
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
Battery Detection
For applications with removable battery packs, bqSWITCHER provides a battery absent detection scheme to
reliably detect insertion and/or removal of battery packs.
POR or VRCH
Detection routine runs on power up
and if VBAT drops below refresh
threshold due to removing battery
or discharging battery.
Yes
Enable
I(DETECT)
for t(DETECT)
VI(BAT)<V(LOWV)
No
BATTERY
PRESENT,
Begin Charge
No
BATTERY
PRESENT,
Begin Charge
Yes
Apply I(WAKE)
for t(WAKE)
VI(BAT) >
VO(REG)
-VRCH
Yes
BATTERY
ABSENT
Figure 11. Battery Absent Detection for bq2410x ICs only
The voltage at the BAT pin is held above the battery recharge threshold, VOREG – VRCH, by the charged battery
following fast charging. When the voltage at the BAT pin falls to the recharge threshold, either by a load on the
battery or due to battery removal, the bqSWITCHER begins a battery absent detection test. This test involves
enabling a detection current, IDISCHARGE1, for a period of tDISCHARGE1 and checking to see if the battery voltage is
below the short circuit threshold, VSHORT. Following this, the wake current, IWAKE is applied for a period of tWAKE
and the battery voltage is checked again to ensure that it is above the recharge threshold. The purpose of this
current is to attempt to close an open battery pack protector, if one is connected to the bqSWITCHER.
Passing both of the discharge and charge tests indicates a battery absent fault at the STAT pins. Failure of either
test starts a new charge cycle. For the absent battery condition, typically the voltage on the BAT pin rises and
falls between 0V and VOVPthresholds indefinitely.
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19
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
VBAT
Battery
Connected
VOREG
No
Battery
Detected
2V/cell
No
Battery
Detected
Yes
Battery
Detected
IWAKE
IBAT
- IDISCHRG1
t DISCHRG1
tWAKE
t DISCHRG1
Figure 12. Battery Detect Timing Diagram
Battery Detection Example
In order to detect a no battery condition during the discharge and wake tests, the maximum output capacitance
should not exceed the following:
a. Discharge (IDISCHRG1 = 400 µA, tDISCHRG1 = 1s, VSHORT = 2V)
I
t DISCHRG1
C MAX_DIS + DISCHRG1
V OREG * V SHORT
C MAX_DIS +
400 mA 1s
4.2 V * 2 V
C MAX_DIS + 182 mF
(10)
b. Wake (IWAKE = 2 mA, tWAKE = 0.5 s, VOREG – VRCH = 4.1V)
I WAKE t WAKE
C MAX_WAKE +
ǒVOREG * VRCHǓ * 0 V
C MAX_WAKE +
2 mA 0.5s
(4.2 V * 0.1 V) * 0V
C MAX_WAKE + 244 mF
(11)
Based on these calculations the recommended maximum output capacitance to ensure proper operation of the
battery detection scheme is 100 µF which will allow for process and temperature variations.
Figure 13 shows the battery detection scheme when a battery is inserted. Channel 3 is the output signal and
Channel 4 is the output current. The output signal switches between VOREG and GND until a battery is inserted.
Once the battery is detected, the output current increases from 0A to 1.3A, which is the programmed charge
current for this application.
20
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bq24115
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
Figure 13. Battery Detection Waveform When a Battery is Inserted
Figure 14 shows the battery detection scheme when a battery is removed. Channel 3 is the output signal and
Channel 4 is the output current. When the battery is removed, the output signal goes up due to the stored energy
in the inductor and it crosses the VOREG – VRCH threshold. At this point the output current goes to 0A and the IC
terminates the charge process and turns on the IDISCHG2 for tDISCHG2. This causes the output voltage to fall down
below the VOREG – VRCHG threshold triggering a Battery Absent condition and starting the battery detection
scheme.
Figure 14. Battery Detection Waveform When a Battery is Removed
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21
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
Current Sense Amplifier
BQ241xx family offers a current sense amplifier feature that translates the charge current into a DC voltage.
Figure 15 is a block diagram of this feature.
OUT
ICHARGE
SNS
RSNS
+
KISET2
BAT
+
-
+
FASTCHG
Disable
ISET2
RISET2
Figure 15. Current Sense Amplifier
The voltage on the ISET2 pin can be used to calculate the charge current. Equation 12 shows the relationship
between the ISET2 voltage and the charge current:
VISET2 K(ISET2)
I CHARGE +
R SNS R ISET2
(12)
This feature can be used to monitor the charge current (Figure 16) during the current regulation phase
(Fastcharge only) and the voltage regulation phase. The schematic for the application circuit for this waveform is
shown in Figure 18
CH3 = Inductor Current
CH3
500 mA/div
CH1 = ISET2
CH3
0A
CH1
200 mV/div
CH2 = OUT
CH1
0V
CH2
16 V
CH2
10 V/div
t = Time = 200 ms/div
Figure 16. Current Sense Amplifier Charge Current Waveform
22
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bq24115
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
bqSWITCHER SYSTEM DESIGN EXAMPLE
The following section provides a detailed system design example for the bq24100.
System Design Specifications:
•
•
•
•
•
•
•
1.
VIN = 16V
VBAT = 4.2V (1-Cell)
ICHARGE = 1.33 A
IPRECHARGE = ITERM = 133 mA
Safety Timer = 5 hours
Inductor Ripple Current = 30% of Fast Charge Current
Initiate Charge Temperature = 0°C to 45°C
Determine the inductor value (LOUT) for the specified charge current ripple:
DI L + I CHARGE I CHARGERipple
L OUT +
L OUT +
ǒVINMAX * VBATǓ
VBAT
ƒ
V INMAX
DI L
4.2 (16 * 4.2)
(1.1 106) (1.33
16
0.3)
L OUT + 7.06 mH
(13)
Set the output inductor to standard 10 µH. Calculate the total ripple current with using the 10 µH inductor:
DI L +
DI L +
ǒVINMAX * VBATǓ
VBAT
V INMAX
16
ƒ
LOUT
4.2 (16 * 4.2)
(1.1 106) (10
10 *6)
DI L + 0.282 A
(14)
Calculate the maximum output current (peak current):
DI
I LPK + I OUT ) L
2
I LPK + 1.33 ) 0.282
2
I LPK + 1.471 A
(15)
Use standard 10 µH inductor with a saturation current higher than 1.471A. (i.e., Sumida CDRH74-100)
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23
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
2. Determine the output capacitor value (OUT) using 16 kHz as the resonant frequency:
1
ƒo +
2p ǸLOUT COUT
1
C OUT +
4p 2
ƒo
C OUT +
4p 2
(16
2
L OUT
1
10 3)2
(10
10 *6)
C OUT + 9.89 mF
(16)
Use standard value 10 µF, 25V, X5R, ±20% ceramic capacitor (i.e., Panasonic 1206 ECJ-3YB1E106M
3. Determine the sense resistor using the following equation:
V
R SNS + RSNS
I CHARGE
(17)
In order to get better current regulation accuracy (±10%), let VRSNS be between 100 mV and 200 mV. Use
VRSNS = 100 mV and calculate the value for the sense resistor.
R SNS + 100 mV
1.33 A
R SNS + 0.075 W
(18)
This value is not standard in resistors. If this happens, then choose the next larger value which in this case is
0.1Ω. Using the same equation (15) the actual VRSNS will be 133mV. Calculate the power dissipation on the
sense resistor:
P RSNS + I CHARGE
P RSNS + 1.332
2
R SNS
0.1
P RSNS + 176.9 mW
(19)
Select standard value 100 mΩ, 0.25W 0805, 1206 or 2010 size, high precision sensing resistor. (i.e., Vishay
CRCW1210-0R10F)
4. Determine ISET 1 resistor using the following equation:
K
V ISET1
R ISET1 + ISET1
RSNS I CHARGE
R ISET1 + 1000 1.0
0.1 1.33
R ISET1 + 7.5 kW
(20)
Select standard value 7.5 kΩ, 1/16W ±1% resistor (i.e., Vishay CRCWD0603-7501-F)
5. Determine ISET 2 resistor using the following equation:
KISET2 VISET2
R ISET2 +
RSNS I PRECHARGE
R ISET2 + 1000 0.1
0.1 0.133
R ISET2 + 7.5 kW
(21)
Select standard value 7.5 kΩ, 1/16W ±1% resistor (i.e., Vishay CRCWD0603-7501-F)
24
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bq24115
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
6. Determine TTC capacitor (TTC) for the 5.0 hours safety timer using the following equation:
t
C TTC + CHARGE
K TTC
C TTC + 300 m
2.6 mńnF
C TTC + 115.4 nF
(22)
Select standard value 100 nF, 16V, X7R, ±10% ceramic capacitor (i.e., Panasonic ECJ-1VB1C104K). Using
this capacitor the actual safety timer will be 4.3 hours.
7. Determine TS resistor network for an operating temperature range from 0°C to 45°C.
VTSB
RT1
TS
RTH
RT2
103AT
Figure 17. TS Resistor Network
Assuming a 103AT NTC Thermistor on the battery pack, determine the values for RT1 and RT2 using the
following equations:
VO(VTSB) ´ RTHCOLD ´ RTHHOT ´
1 - 1
VLTF
VHTF
RT2 =
RTHHOT ´
(
VO(VTSB)
-1
VHTF
VO(VTSB)
-1
VLTF
RT1 =
1 +
1
RT2 RTHCOLD
)
- RTHCOLD ´
(
VO(VTSB)
-1
VLTF
)
Where:
VLTF = VO(VTSB) ´ % LTF¸100 / 100
VHTF = VO(VTSB) ´ % HTF¸100 / 100
(23)
RTH COLD + 27.28 kW
RTH HOT + 4.912 kW
RT1 + 9.31 kW
RT2 + 442 kW
Copyright © 2004–2008, Texas Instruments Incorporated
(24)
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25
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
APPLICATION INFORMATION
Charging Battery and Powering System Without Affecting Battery Charge and Termination
RSYS
LOUT
BQ24100
VIN
CIN
1.5 KW
10 mF
1.5 KW
Adapter
Present
1.5 KW
Done
3
Charge
IN
OUT 1
4
IN
6
VCC
2
STAT1 PGND 18
OUT 20
PGND 17
RSNS
10 mH
D1
COUT
0.1W
Battery
Pack
Pack+
10 mF
Pack-
MMBZ18VALT1
103AT
19 STAT2
5
PG
7
TTC
SNS 15
BAT 14
7.5 KW
VTSB
ISET1 8
7.5 KW
CTTC
16 CE
9.31 KW
ISET2 9
0.1 mF
10 VSS
0.1 mF
13 NC
TS 12
VTSB 11
442 KW
0.1 mF
0.1 mF
Figure 18. Application Circuit for Charging a Battery and Powering a System
Without Affecting Termination
The bqSWITCHER was designed as a stand-alone battery charger but can be easily adapted to power a system
load, while considering a few minor issues.
Advantages:
1. The charger controller is based only on what current goes through the current-sense resistor (so precharge,
constant current, and termination all work well), and is not affected by the system load.
2. The input voltage has been converted to a usable system voltage with good efficiency from the input.
3. Extra external FETs are not needed to switch power source to the battery.
4. The TTC pin can be grounded to disable termination and keep the converter running and the battery fully
charged, or let the switcher terminate when the battery is full and then run off of the battery via the sense
resistor.
Other Issues:
1. If the system load current is large (≥ 1 A), the IR drop across the battery impedance causes the battery
voltage to drop below the refresh threshold and start a new charge. The charger would then terminate due to
low charge current. Therefore, the charger would cycle between charging and termination. If the load is
smaller, the battery would have to discharge down to the refresh threshold resulting in a much slower
cycling. Note that grounding the TTC pin keeps the converter on continuously.
2. If TTC is grounded, the battery is kept at 4.2 V (not much different than leaving a fully charged battery set
unloaded).
3. Efficiency declines 2-3% hit when discharging through the sense resistor to the system.
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bq24115
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
Using bq24105 to Charge the LiFePO4 Battery
The LiFePO4 battery has many unique features such as a high thermal runaway temperature, discharge current
capability, and charge current. These special features make it attractive in many applications such as power
tools. The recommended charge voltage is 3.6 V and termination current is 50 mA. Figure 19 shows an
application circuit for charging one cell LiFePO4 using bq24105. The charge voltage is 3.6 V and recharge
voltage is 3.516 V. The fast charging current is set to 1.33 A while the termination current is 50 mA. This circuit
can be easily changed to support two or three cell applications. However, only 84 mV difference between
regulation set point and rechargeable threshold makes it frequently enter into recharge mode when small load
current is applied. This can be solved by lower down the recharge voltage threshold to 200 mV to discharge
more energy from the battery before it enters recharge mode again. See the application report, Using the
bq24105/25 to Charge LiFePO4 Battery (SLUA443), for additional details. The recharge threshold should be
selected according to real application conditions.
LOUT
BQ24105
VIN
CIN
1.5 KW
10 mF
1.5 KW
Adapter
Present
1.5 KW
Done
Charge
3
IN
OUT 1
4
IN
OUT 20
6
VCC
RSNS
10 mH
COUT
D1
Battery
Pack
Pack+
0.1W
10 mF
Pack-
MMBZ18VALT1
PGND 17
103AT
2
STAT1 PGND 18
19 STAT2
5
PG
7
TTC
SNS 15
BAT 14
ISET1 8
7.5 KW RISET1
VTSB
20 KW
CTTC
16 CE
ISET2 9
0.1 mF
10 VSS
0.1 mF
13 FB
9.31 KW
RT1
442 KW
RT2
RISET2
TS 12
VTSB 11
0.1 mF
0.1 mF
143 KW
200 KW
Figure 19. 1-Cell LiFePO4 Application
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bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
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THERMAL CONSIDERATIONS
The SWITCHER is packaged in a thermally enhanced MLP package. The package includes a thermal pad to
provide an effective thermal contact between the IC and the printed circuit board (PCB). Full PCB design
guidelines for this package are provided in the application report entitled: QFN/SON PCB Attachment
(SLUA271).
The most common measure of package thermal performance is thermal impedance (θJA) measured (or modeled)
from the chip junction to the air surrounding the package surface (ambient). The mathematical expression for θJA
is:
T * TA
q (JA) + J
P
(25)
Where:
TJ = chip junction temperature
TA = ambient temperature
P = device power dissipation
Factors that can greatly influence the measurement and calculation of θJA include:
• Whether or not the device is board mounted
• Trace size, composition, thickness, and geometry
• Orientation of the device (horizontal or vertical)
• Volume of the ambient air surrounding the device under test and airflow
• Whether other surfaces are in close proximity to the device being tested
The device power dissipation, P, is a function of the charge rate and the voltage drop across the internal power
FET. It can be calculated from the following equation:
P = [Vin × lin - Vbat × Ibat]
Due to the charge profile of Li-xx batteries, the maximum power dissipation is typically seen at the beginning of
the charge cycle when the battery voltage is at its lowest. (See Figure 9.)
28
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bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
PCB LAYOUT CONSIDERATION
It is important to pay special attention to the PCB layout. The following provides some guidelines:
• To obtain optimal performance, the power input capacitors, connected from input to PGND, should be placed
as close as possible to the bqSWITCHER. The output inductor should be placed directly above the IC and the
output capacitor connected between the inductor and PGND of the IC. The intent is to minimize the current
path loop area from the OUT pin through the LC filter and back to the GND pin. The sense resistor should be
adjacent to the junction of the inductor and output capacitor. Route the sense leads connected across the
R(SNS) back to the IC, close to each other (minimize loop area) or on top of each other on adjacent layers (do
not route the sense leads through a high-current path). Use an optional capacitor downstream from the sense
resistor if long (inductive) battery leads are used.
• Place all small-signal components (CTTC, RSET1/2 and TS) close to their respective IC pin (do not place
components such that routing interrupts power stage currents). All small control signals should be routed
away from the high current paths.
• The PCB should have a ground plane (return) connected directly to the return of all components through vias
(3 vias per capacitor for power-stage capacitors, 3 vias for the IC PGND, 1 via per capacitor for small-signal
components). A star ground design approach is typically used to keep circuit block currents isolated
(high-power/low-power small-signal) which reduces noise-coupling and ground-bounce issues. A single
ground plane for this design gives good results. With this small layout and a single ground plane, there is not
a ground-bounce issue, and having the components segregated minimizes coupling between signals.
• The high-current charge paths into IN and from the OUT pins must be sized appropriately for the maximum
charge current in order to avoid voltage drops in these traces. The PGND pins should be connected to the
ground plane to return current through the internal low-side FET. The thermal vias in the IC PowerPAD™
provide the return-path connection.
• The bqSWITCHER is packaged in a thermally enhanced MLP package. The package includes a thermal pad
to provide an effective thermal contact between the IC and the PCB. Full PCB design guidelines for this
package are provided in the application report entitled: QFN/SON PCB Attachment (SLUA271). Six 10-13 mil
vias are a minimum number of recommended vias, placed in the IC's power pad, connecting it to a ground
thermal plane on the opposite side of the PWB. This plane must be at the same potential as VSS and PGND
of this IC.
• See user guide SLUU200 for an example of good layout.
WAVEFORMS: All waveforms are taken at Lout (IC Out pin). VIN = 7.6 V and the battery was set to 2.6 V, 3.5 V,
and 4.2 V for the three waveforms. When the top switch of the converter is on, the waveform is at ~7.5 V, and
when off, the waveform is near ground. Note that the ringing on the switching edges is small. This is due to a
tight layout (minimized loop areas), a shielded inductor (closed core), and using a low-inductive scope ground
lead (i.e., short with minimum loop) .
Copyright © 2004–2008, Texas Instruments Incorporated
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
29
bq24100,, bq24103,, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com
Precharge: The current is low in precharge; so, the bottom synchronous FET turns off after its minimum on-time
which explains the step between ≈0 V and -0.5 V. When the bottom FET and top FET are off, the current
conducts through the body diode of the bottom FET which results in a diode drop below the ground potential.
The initial negative spike is the delay turning on the bottom FET, which is to prevent shoot-through current as the
top FET is turning off.
Fast Charge: This is captured during the constant-current phase. The two negative spikes are the result of the
short delay when switching between the top and bottom FETs. The break-before-make action prevents current
shoot-through and results in a body diode drop below ground potential during the break time.
Charge during Voltage Regulation and Approaching Termination: Note that this waveform is similar to the
precharge waveform. The difference is that the battery voltage is higher so the duty cycle is slightly higher. The
bottom FET stays on longer because there is more of a current load than during precharge; it takes longer for the
inductor current to ramp down to the current threshold where the synchronous FET is disabled.
30
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Copyright © 2004–2008, Texas Instruments Incorporated
Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115
PACKAGE OPTION ADDENDUM
www.ti.com
19-Dec-2008
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
50
Call TI
MSL Peak Temp (3)
BQ24100RHL
PREVIEW
QFN
RHL
20
BQ24100RHLR
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24103ARHLR
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24103ARHLRG4
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24103ARHLT
ACTIVE
QFN
RHL
20
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24103ARHLTG4
ACTIVE
QFN
RHL
20
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24103RHLR
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24104RHLR
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24104RHLT
ACTIVE
QFN
RHL
20
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24105RHLR
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24105RHLRG4
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24108RHLR
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24108RHLRG4
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24109RHLR
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24109RHLRG4
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24109RHLT
ACTIVE
QFN
RHL
20
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24109RHLTG4
ACTIVE
QFN
RHL
20
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24113ARHLR
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24113ARHLRG4
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24113ARHLT
ACTIVE
QFN
RHL
20
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24113ARHLTG4
ACTIVE
QFN
RHL
20
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24113RHLR
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24113RHLRG4
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24115RHLR
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
BQ24115RHLRG4
ACTIVE
QFN
RHL
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
Addendum-Page 1
TBD
Lead/Ball Finish
Call TI
PACKAGE OPTION ADDENDUM
www.ti.com
19-Dec-2008
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Dec-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
BQ24100RHLR
QFN
RHL
20
3000
330.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
BQ24103ARHLR
QFN
RHL
20
3000
330.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
BQ24103ARHLT
QFN
RHL
20
250
180.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
BQ24103RHLR
QFN
RHL
20
3000
330.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
BQ24104RHLR
QFN
RHL
20
3000
330.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
BQ24104RHLT
QFN
RHL
20
250
180.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
BQ24105RHLR
QFN
RHL
20
3000
330.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
BQ24108RHLR
QFN
RHL
20
3000
330.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
BQ24109RHLR
QFN
RHL
20
3000
330.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
BQ24109RHLT
QFN
RHL
20
250
180.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
BQ24113ARHLR
QFN
RHL
20
3000
330.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
BQ24113ARHLT
QFN
RHL
20
250
180.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
BQ24113RHLR
QFN
RHL
20
3000
330.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
BQ24115RHLR
QFN
RHL
20
3000
330.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Dec-2008
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
BQ24100RHLR
QFN
RHL
20
3000
346.0
346.0
29.0
BQ24103ARHLR
QFN
RHL
20
3000
346.0
346.0
29.0
BQ24103ARHLT
QFN
RHL
20
250
190.5
212.7
31.8
BQ24103RHLR
QFN
RHL
20
3000
346.0
346.0
29.0
BQ24104RHLR
QFN
RHL
20
3000
346.0
346.0
29.0
BQ24104RHLT
QFN
RHL
20
250
190.5
212.7
31.8
BQ24105RHLR
QFN
RHL
20
3000
346.0
346.0
29.0
BQ24108RHLR
QFN
RHL
20
3000
346.0
346.0
29.0
BQ24109RHLR
QFN
RHL
20
3000
346.0
346.0
29.0
BQ24109RHLT
QFN
RHL
20
250
190.5
212.7
31.8
BQ24113ARHLR
QFN
RHL
20
3000
346.0
346.0
29.0
BQ24113ARHLT
QFN
RHL
20
250
190.5
212.7
31.8
BQ24113RHLR
QFN
RHL
20
3000
346.0
346.0
29.0
BQ24115RHLR
QFN
RHL
20
3000
346.0
346.0
29.0
Pack Materials-Page 2
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