LL4448 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard 1N4448 These diode are delivered taped. Details see Taping. Weight approx. : 0.05g DIMENSIONS DIM Absolute Maximum Ratings (Ta=25 inches mm Min. Max. A 0.134 0.142 3.4 3.6 B 0.055 0.059 1.40 1.50 C 0.008 0.016 0.2 0.4 ) Symbols Values Units Reverse voltage VR 75 Volts Peak reverse voltage VRM 100 Volts Rectified current (Average) Half wave rectification with Resist. Load at Tamb=25 and f 50Hz IO Surge forward current at t<1s and Tj=25 IFSM Power dissipation at Tamb=25 Ptot Junction Temperature Tj 175 Storage temperature range TS -65 to +175 Note: (1) Valid provided that electrodes are kept at ambient temperature 1 150 1) 500 500 1) mA mA mW Min. Max. Note Characteristics at Tj=25 Symbols Min. Typ. Max. Units Forward voltage at IF=5mA at IF=100mA VF VF 0.62 - - 0.72 1 Volt Volt Leakage current at VR=20V at VR=75V at VR=20V, Tj=150 IR IR IR - - 25 5 50 nA uA uA V(BR)R 100 - - Volts Ctot - - 4 F trr - - 4 nS RthA - - 0.35 0.45 - Reverse breakdown voltage tested with 100uA pulses Capacitance at VF=VR=0 Reverse recovery time from IF=10mA to IR=1mA, VR=6V, RL=100 Thermal resistance junction to ambient Air Rectification efficiency at f=100MHz, VRF=2V V Note: (1) Valid provided that electrodes are kept at ambient temperature Rectification efficiency measurement circuit 2 - 1) K/mW - RATINGS AND CHARACTERISTIC CURVES 3 RATINGS AND CHARACTERISTIC CURVES 4