INFRARED PULSED LASER DIODE L6690 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE (Ta=25℃) (Ta=25℃) 100 RELATIVE RADIANT POWER (%) 2.5 ep 2.0 1.5 1.0 0.5 0 1.0 1.5 2.0 2.5 40 20 0 830 3.0 ●High duty ratio (DR≦2.5%) ●High speed rise time (tr=0.5 ns typ.) 60 PULSED FORWARD CURRENT IFP (A) ■APPLICATIONS 850 870 890 ●Laser rader ●Range finder ●Excitation light source ●Optical trigger ●Security barrier 910 WAVELENGTH (nm) Figure 4: Typical Directivity (IFP=2.5 A, Ta=25℃) Figure 1: Dimensional Outline (Unit: mm) 80 Parallel Direction Glass Window Vertical Direction 9.0 +0 -0.1 5.7 ± 0.2 2.8 ± 0.3 LD Chip 2.4 60 Top View Top View 40 1.5 RELATIVE RADIANT POWER (%) 100 ■ABSOLUTE MAXIMUM RATINGS 20 Parameter 0 40 5.1 ± 0.5 0.5 ■FEATURES 7.0 ± 0.5 0 80 Symbol Value Unit IFP 3 A Pulsed Foward Current 30 20 10 0 10 20 30 40 2 V φep 3 W tw 130 ns Duty Ratio DR 2.5 % Operating Temperature Top -35 to +80 ℃ Storage Temperature Tstg -40 to +85 ℃ Pulsed Radiant Output Power Pulse Duration (FWHM) Handling Precautions for L6690 1. Precautions for handling The LD (laser diode) may be damaged or its performance may deteriorate due to such factors as electrostatic discharge from the human body, surge voltages from measurement equipment, leakage voltages from soldering irons, and packing materials. As a countermeasure against static electricity, the device, operator, work place and measuring jigs must all be set at the same electric potential. In using LD, observe the following precautions: ・To protect the device from static electricity charges which accumulate on the operator or the operator’s clothes, use a wrist strap etc. to ground the operator’s body via a high impedance resistor (1MΩ). ・A semiconductive sheet should be laid on both the work table and the floor in the work area. When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10MΩ. ・For containers for transportation and packing, use of antistatic material (material that minimizes the generation of static change when rubbed against or separated from itself or other similar materials). 2. Precautions for mounting (1)Lead forming To form the leads, hold the base of the leads securely and bend them so that no force is applied to the package. Lead forming should be done before soldering. (2)Cutting off the leads If leads are out when still at a high temperature, this may cause an electrical discontinuity. Always cut off the leads when they are at room temperature. Never cut off the leads immediately after they are soldered. (3)Soldering Using a low-temperature melting solder (below 200℃), solder the leads at the temperature and dwell time specified as follows. Maximum Soldering Temperature: 230℃ Maximum Soldering Time: 5 seconds (1 second for devices having a lead length less than 2mm) If these conditions cannot be met, it is recommended that some form of heat sink be used at the base of the lead so that the solder heat is not conducted to the package. Also be careful not to apply excessive force to the leads during soldering. Soldering at excessive temperatures and dwell times may cause the roots of the leads to crack, resulting in performance deterioration. This sometimes leads to wiring breakage. If the leads are soldered while external force is applied to the device, the residual force tends to degrade device performance. Care should also be taken not to apply force to the leads during soldering. In addition, when soldering an LD. use a soldering iron with its metallic parts grounded to prevent damage to the device from static discharge. Do not use any flux which is highly acidic. alkaline or inorganic because it may cause the component leads to erode. Use a rosin flux. 3.Protection against laser beams The LD is classified into class 3B according to the laser product standards of the lEC825-1 (Radiation safety of laser products Part1: Equipment classification, requirements and user’s guide). The operator must avoid eye or skin exposure to the laser beam. When viewing the laser beam, be sure to wear safety goggles that block infrared radiation. http://www.hamamatsu.com 2.54 Side View VR Reverse Voltage ANGLE (degree) 0.45 (Pin Connection) 1.0 Common to Case 0.4 (Ｗ) 3.0 PULSED RADIANT POWER L6690 Figure 3: Typical Emission Spectrum PD LD Cathode PD Anode LD Cathode PD Anode Bottom View Common to Case ■ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25℃) Parameter Pulsed Radiant Power Symbol Condition Min. Typ. Max. Unit φep IFP=2.5A 1.8 - - W - Peak Emission Wavelength λp 870 - nm Spectral Radiation Half Bandwidth Δλ FWHM - 3 - nm Forward Voltage VF IFP=2.5A - 2.7 - V Rise Time tr - 0.5 - ns Beam Spread Angle : Parallel θ// FWHM 6 8 10 degree : Vertical θ⊥ IFP=2.5A 27 30 33 degree - 0.5 - A - 0.25 - mA Lasing Threshold Current Ith Monitor PD Current Im IFP=2.5A HAMAMATSU PHOTONICS K.K., International Sales Division 325-6, Sunayama-cho, Hamamatsu City, 430-8587, Japan, Telephone: (81)53-452-2141, Fax: (81)53-456-7889 Note: General operating conditionφep≦2 W, tw≦100 ns, Repetition frequency≦100 kHz U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: [email protected] Cat. No. LLD1002E01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: [email protected] Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. C 1998 Hamamatsu Photonics K.K. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ○ Feb. 1998 T Printed in Japan (1,000) LD INFRARED PULSED LASER DIODE L6690 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE (Ta=25℃) (Ta=25℃) 100 RELATIVE RADIANT POWER (%) 2.5 ep 2.0 1.5 1.0 0.5 0 1.0 1.5 2.0 2.5 40 20 0 830 3.0 ●High duty ratio (DR≦2.5%) ●High speed rise time (tr=0.5 ns typ.) 60 PULSED FORWARD CURRENT IFP (A) ■APPLICATIONS 850 870 890 ●Laser rader ●Range finder ●Excitation light source ●Optical trigger ●Security barrier 910 WAVELENGTH (nm) Figure 4: Typical Directivity (IFP=2.5 A, Ta=25℃) Figure 1: Dimensional Outline (Unit: mm) 80 Parallel Direction Glass Window Vertical Direction 9.0 +0 -0.1 5.7 ± 0.2 2.8 ± 0.3 LD Chip 2.4 60 Top View Top View 40 1.5 RELATIVE RADIANT POWER (%) 100 ■ABSOLUTE MAXIMUM RATINGS 20 Parameter 0 40 5.1 ± 0.5 0.5 ■FEATURES 7.0 ± 0.5 0 80 Symbol Value Unit IFP 3 A Pulsed Foward Current 30 20 10 0 10 20 30 40 2 V φep 3 W tw 130 ns Duty Ratio DR 2.5 % Operating Temperature Top -35 to +80 ℃ Storage Temperature Tstg -40 to +85 ℃ Pulsed Radiant Output Power Pulse Duration (FWHM) Handling Precautions for L6690 1. Precautions for handling The LD (laser diode) may be damaged or its performance may deteriorate due to such factors as electrostatic discharge from the human body, surge voltages from measurement equipment, leakage voltages from soldering irons, and packing materials. As a countermeasure against static electricity, the device, operator, work place and measuring jigs must all be set at the same electric potential. In using LD, observe the following precautions: ・To protect the device from static electricity charges which accumulate on the operator or the operator’s clothes, use a wrist strap etc. to ground the operator’s body via a high impedance resistor (1MΩ). ・A semiconductive sheet should be laid on both the work table and the floor in the work area. When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10MΩ. ・For containers for transportation and packing, use of antistatic material (material that minimizes the generation of static change when rubbed against or separated from itself or other similar materials). 2. Precautions for mounting (1)Lead forming To form the leads, hold the base of the leads securely and bend them so that no force is applied to the package. Lead forming should be done before soldering. (2)Cutting off the leads If leads are out when still at a high temperature, this may cause an electrical discontinuity. Always cut off the leads when they are at room temperature. Never cut off the leads immediately after they are soldered. (3)Soldering Using a low-temperature melting solder (below 200℃), solder the leads at the temperature and dwell time specified as follows. Maximum Soldering Temperature: 230℃ Maximum Soldering Time: 5 seconds (1 second for devices having a lead length less than 2mm) If these conditions cannot be met, it is recommended that some form of heat sink be used at the base of the lead so that the solder heat is not conducted to the package. Also be careful not to apply excessive force to the leads during soldering. Soldering at excessive temperatures and dwell times may cause the roots of the leads to crack, resulting in performance deterioration. This sometimes leads to wiring breakage. If the leads are soldered while external force is applied to the device, the residual force tends to degrade device performance. Care should also be taken not to apply force to the leads during soldering. In addition, when soldering an LD. use a soldering iron with its metallic parts grounded to prevent damage to the device from static discharge. Do not use any flux which is highly acidic. alkaline or inorganic because it may cause the component leads to erode. Use a rosin flux. 3.Protection against laser beams The LD is classified into class 3B according to the laser product standards of the lEC825-1 (Radiation safety of laser products Part1: Equipment classification, requirements and user’s guide). The operator must avoid eye or skin exposure to the laser beam. When viewing the laser beam, be sure to wear safety goggles that block infrared radiation. http://www.hamamatsu.com 2.54 Side View VR Reverse Voltage ANGLE (degree) 0.45 (Pin Connection) 1.0 Common to Case 0.4 (Ｗ) 3.0 PULSED RADIANT POWER L6690 Figure 3: Typical Emission Spectrum PD LD Cathode PD Anode LD Cathode PD Anode Bottom View Common to Case ■ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25℃) Parameter Pulsed Radiant Power Symbol Condition Min. Typ. Max. Unit φep IFP=2.5A 1.8 - - W - Peak Emission Wavelength λp 870 - nm Spectral Radiation Half Bandwidth Δλ FWHM - 3 - nm Forward Voltage VF IFP=2.5A - 2.7 - V Rise Time tr - 0.5 - ns Beam Spread Angle : Parallel θ// FWHM 6 8 10 degree : Vertical θ⊥ IFP=2.5A 27 30 33 degree - 0.5 - A - 0.25 - mA Lasing Threshold Current Ith Monitor PD Current Im IFP=2.5A HAMAMATSU PHOTONICS K.K., International Sales Division 325-6, Sunayama-cho, Hamamatsu City, 430-8587, Japan, Telephone: (81)53-452-2141, Fax: (81)53-456-7889 Note: General operating conditionφep≦2 W, tw≦100 ns, Repetition frequency≦100 kHz U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: [email protected] Cat. No. LLD1002E01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: [email protected] Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. C 1998 Hamamatsu Photonics K.K. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ○ Feb. 1998 T Printed in Japan (1,000) LD