TI TS5A23166YZTR

TS5A23166
www.ti.com
SCDS196E – MAY 2005 – REVISED MARCH 2010.
0.9-Ω DUAL SPST ANALOG SWITCH
5-V/3.3-V 2-CHANNEL ANALOG SWITCH
Check for Samples: TS5A23166
FEATURES
APPLICATIONS
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1
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Isolation in Powered-Down Mode, V+ = 0
Low ON-State Resistance (0.9 Ω)
Control Inputs Are 5.5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
Cell Phones
PDAs
Portable Instrumentation
Audio and Video Signal Routing
Low-Voltage Data-Acquisition Systems
Communication Circuits
Modems
Hard Drives
Computer Peripherals
Wireless Terminals and Peripherals
DCU PACKAGE
(TOP VIEW)
YZP PACKAGE
(BOTTOM VIEW)
NO1
1
8
V+
COM1
2
7
IN1
IN2
3
6
COM2
GND
4
5
NO2
GND
4
5
NO2
IN2
3
6
COM2
COM1
2
7
IN1
1
8
V+
NO1
DESCRIPTION/ORDERING INFORMATION
The TS5A23166 is a dual single-pole single-throw (SPST) analog switch that is designed to operate from 1.65 V
to 5.5 V. The device offers a low ON-state resistance and an excellent channel-to-channel ON-state resistance
matching. The device has excellent total harmonic distortion (THD) performance and consumes very low power.
These features make this device suitable for portable audio applications.
Table 1. ORDERING INFORMATION
PACKAGE (1)
TA
–40°C to 85°C
(1)
(2)
(3)
ORDERABLE
PART NUMBER
(2)
TOP-SIDE MARKING (3)
NanoFree™ – WCSP (DSBGA)
0.23-mm Large Bump – YZP (Pb-free)
Tape and reel
TS5A23166YZPR
JM_
VSSOP – DCU (Pb-free)
Tape and reel
TS5A23166DCUR
JAM_
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
The actual top-side marking has one additional character that designates the assembly/test site.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2010., Texas Instruments Incorporated
TS5A23166
SCDS196E – MAY 2005 – REVISED MARCH 2010.
www.ti.com
SUMMARY OF CHARACTERISTICS (1)
Dual Single Pole, Single Throw
(2 × SPST)
Configuration
Number of channels
2
ON-state resistance (ron)
0.9 Ω
ON-state resistance match (Δron)
0.1 Ω
ON-state resistance flatness
(ron(flat))
0.25 Ω
Turn-on/turn-off time (tON/tOFF)
7.5 ns/9 ns
Charge injection (QC)
6 pC
Bandwidth (BW)
150 MHz
OFF isolation (OISO)
–62 dB at 1 MHz
Crosstalk (XTALK)
–85 dB at 1 MHz
Total harmonic distortion (THD)
0.005%
Leakage current (ICOM(OFF))
±20 nA
Power-supply current (I+)
0.1 mA
Package options
(1)
8-pin SSOP, VSSOP, and WCSP
V+ = 5 V, TA = 25°C
FUNCTION TABLE
Absolute Maximum Ratings (1)
IN
NO TO COM,
COM TO NO
L
OFF
H
ON
(2)
over operating free-air temperature range (unless otherwise noted)
V+
Supply voltage range (3)
VNO
VCOM
Analog voltage range (3)
IK
Analog port diode current
INO
ICOM
On-state switch current
VI
Digital input voltage range (3)
IIK
Digital input clamp current
I+
Continuous current through V+
IGND
Continuous current through GND
(4) (5)
VNO, VCOM < 0
On-state peak switch current (6)
(4)
qJA
Package thermal impedance (7)
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
(6)
(7)
2
VNO, VCOM = 0 to V+
VI < 0
MIN
MAX
–0.5
6.5
V
–0.5
V+ + 0.5
V
–50
mA
–200
200
–400
400
–0.5
6.5
–50
–100
mA
V
mA
100
mA
100
mA
DCU package
227
YZP package
102
–65
UNIT
150
°C/W
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
Pulse at 1-ms duration < 10% duty cycle.
The package thermal impedance is calculated in accordance with JESD 51-7.
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Product Folder Link(s): TS5A23166
TS5A23166
www.ti.com
SCDS196E – MAY 2005 – REVISED MARCH 2010.
Electrical Characteristics for 5-V Supply (1)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX
0
V+
UNIT
Analog Switch
Analog signal range
VCOM,
VNO
Peak ON resistance
rpeak
0 ≤ VNO ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 12
25°C
ON-state resistance
ron
VNO = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 12
25°C
ON-state resistance
match between
channels
Δron
VNO = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 12
0 ≤ VNO ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 12
ON-state resistance
flatness
ron(flat)
Switch OFF,
See Figure 13
VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,
Switch OFF,
See Figure 13
VCOM = 1 V,
VNO = 4.5 V,
or
VCOM = 4.5 V,
VNO = 1 V,
Switch OFF,
See Figure 13
VCOM = 0 to 5.5 V,
VNO = 5.5 V to 0,
Switch OFF,
See Figure 13
INO(ON)
VNO = 1 V,
VCOM = Open,
or
VNO = 4.5 V,
VCOM = Open,
Switch ON,
See Figure 14
ICOM(ON)
VCOM = 1 V,
VNO = Open,
or
VCOM = 4.5 V,
VNO = Open,
Switch ON,
See Figure 14
INO(OFF)
INO(PWROFF)
ICOM(OFF)
COM
OFF leakage current
ICOM(PWROFF)
COM
ON leakage current
Switch ON,
See Figure 12
VNO = 1 V,
VCOM = 4.5 V,
or
VNO = 4.5 V,
VCOM = 1 V,
NO
OFF leakage current
NO
ON leakage current
VNO = 1 V, 1.5 V, 2.5 V,
ICOM = –100 mA,
Full
Full
0.9
4.5 V
1.2
0.75
4.5 V
0.04
4.5 V
0.15
Full
25°C
Full
25°C
Full
5.5 V
0V
5.5 V
0V
25°C
Full
–10
0.25
Ω
10
50
4
0.2
10
50
0.4
–50
mA
nA
mA
5
50
0.4
nA
20
150
–50
–5
5.5 V
0.2
–150
–10
20
150
–50
–5
5.5 V
4
–150
0V
25°C
Full
Ω
0.25
0V
25°C
Full
Ω
0.2
4.5 V
25°C
Full
Ω
0.1
0.1
25°C
25°C
0.9
1
25°C
Full
1.1
V
nA
5
–50
50
nA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Full
2.4
5.5
V
Input logic low
VIL
Full
0
0.8
V
25°C
–2
Input leakage current
(1)
(2)
IIH, IIL
VI = 5.5 V or 0
Full
5.5 V
–20
0.3
2
20
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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Product Folder Link(s): TS5A23166
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TS5A23166
SCDS196E – MAY 2005 – REVISED MARCH 2010.
www.ti.com
Electrical Characteristics for 5-V Supply (1) (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
25°C
5V
1
Full
4.5 V to
5.5 V
1
TYP MAX
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL= 35 pF,
See Figure 16
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
Charge injection
QC
VGEN = 0,
RGEN = 0,
NO
OFF capacitance
CNO(OFF)
COM
OFF capacitance
CCOM(OFF)
NO
ON capacitance
CNO(ON)
COM
ON capacitance
CCOM(ON)
Digital input
capacitance
CI
4.5
7.5
9
8
ns
25°C
5V
4.5
Full
4.5 V to
5.5 V
11
3.5
CL = 1 nF,
See Figure 20
25°C
5V
6
pC
VNO = V+ or GND,
Switch OFF,
See Figure 15
25°C
5V
19
pF
VCOM = V+ or GND,
Switch OFF,
See Figure 15
25°C
5V
18
pF
VNO = V+ or GND,
Switch ON,
See Figure 15
25°C
5V
35.5
pF
VCOM = V+ or GND,
Switch ON,
See Figure 15
25°C
5V
35.5
pF
VI = V+ or GND,
See Figure 15
25°C
5V
2
pF
13
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 17
25°C
5V
150
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
25°C
5V
–62
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 19
25°C
5V
–85
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 21
25°C
5V
0.005
%
VI = V+ or GND,
Switch ON or OFF
25°C
5.5 V
0.01
Supply
Positive supply
current
(1)
4
I+
Full
0.1
1
mA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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Product Folder Link(s): TS5A23166
TS5A23166
www.ti.com
SCDS196E – MAY 2005 – REVISED MARCH 2010.
Electrical Characteristics for 3.3-V Supply (1)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX
0
V+
UNIT
Analog Switch
Analog signal range
VCOM,
VNO
Peak ON resistance
rpeak
0 ≤ VNO ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 12
25°C
ON-state resistance
ron
VNO = 2 V,
ICOM = –100 mA,
Switch ON,
See Figure 12
25°C
ON-state resistance
match between
channels
Δron
VNO = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 12
0 ≤ VNO ≤ V+,
ICOM = –100 mA
Switch ON,
See Figure 12
ON-state resistance
flatness
ron(flat)
INO(OFF)
NO
OFF leakage current
INO(PWROFF)
ICOM(OFF)
COM
OFF leakage current
ICOM(PWROFF)
NO
ON leakage current
COM
ON leakage current
INO(ON)
ICOM(ON)
VNO = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 12
VNO = 1 V, VCOM = 3 V,
or
VNO = 3 V, VCOM = 1 V,
Switch OFF,
See Figure 13
VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
Switch OFF,
See Figure 13
VCOM = 1 V, VNO = 3 V,
or
VCOM = 3 V, VNO = 1 V,
Switch OFF,
See Figure 13
VCOM = 0 to 3.6 V,
VNO = 3.6 V to 0,
Switch OFF,
See Figure 13
VNO = 1 V,
VCOM = Open,
or
VNO = 3 V,
VCOM = Open,
Switch ON,
See Figure 14
VCOM = 1 V,
VNO = Open,
or
VCOM = 3 V,
VNO = Open,
Switch ON,
See Figure 14
Full
Full
1.3
3V
1.8
1.1
3V
0.04
3V
0.15
Full
25°C
Full
25°C
Full
3.6 V
0V
0V
25°C
Full
0.25
Ω
–5
5
25
0.5
0.1
5
25
0.3
–20
mA
nA
mA
2
20
0.3
nA
5
50
–25
–2
3.6 V
0.1
–50
–5
5
50
–25
–2
3.6 V
0.5
–50
–5
3.6 V
25°C
Full
Ω
0.25
–5
25°C
Full
Ω
0.3
3V
25°C
Full
Ω
0.1
0.1
25°C
25°C
1.5
1.7
25°C
Full
1.6
V
nA
2
–20
20
nA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Full
2
5.5
V
Input logic low
VIL
Full
0
0.8
V
25°C
–2
Input leakage current
(1)
(2)
IIH, IIL
VI = 5.5 V or 0
Full
3.6 V
–20
0.3
2
20
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Submit Documentation Feedback
Copyright © 2005–2010., Texas Instruments Incorporated
Product Folder Link(s): TS5A23166
5
TS5A23166
SCDS196E – MAY 2005 – REVISED MARCH 2010.
www.ti.com
Electrical Characteristics for 3.3-V Supply (1) (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
25°C
3.3 V
1.5
Full
3 V to
3.6 V
1
25°C
3.3 V
4.5
Full
3 V to
3.6 V
3
TYP MAX
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL= 35 pF,
See Figure 16
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
Charge injection
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 20
25°C
5V
NO
OFF capacitance
CNO(OFF)
VNO = V+ or GND,
Switch OFF,
See Figure 15
25°C
COM
OFF capacitance
CCOM(OFF)
VCOM = V+ or GND,
Switch OFF,
See Figure 15
NO
ON capacitance
CNO(ON)
VNO = V+ or GND,
Switch ON,
COM
ON capacitance
CCOM(ON)
Digital input
capacitance
CI
5
9.5
10
8.5
ns
11
12.5
ns
6
pC
3.3 V
19.5
pF
25°C
3.3 V
18.5
pF
See Figure 15
25°C
3.3 V
36
pF
VCOM = V+ or GND,
Switch ON,
See Figure 15
25°C
3.3 V
36
pF
VI = V+ or GND,
See Figure 15
25°C
3.3 V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 17
25°C
3.3 V
150
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
25°C
3.3 V
–62
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 19
25°C
3.3 V
–85
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 21
25°C
3.3 V
0.01
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
(1)
6
I+
25°C
Full
3.6 V
0.001
0.05
0.3
mA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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Product Folder Link(s): TS5A23166
TS5A23166
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SCDS196E – MAY 2005 – REVISED MARCH 2010.
Electrical Characteristics for 2.5-V Supply (1)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO
0
Peak ON
resistance
rpeak
0 ≤ VNO ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 12
25°C
ON-state
resistance
ron
VNO = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 12
25°C
VNO = 1.8 V, 0.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 12
0 ≤ VNO ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 12
VNO = 1.8 V, 0.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 12
ON-state
resistance
match
between
channels
ON-state
resistance
flatness
NO
OFF leakage
current
Δron
ron (flat)
INO(OFF)
COM
ON leakage
current
VNO = 0.5 V,
VCOM = 2.3 V,
or
VNO = 2.3 V,
VCOM = 0.5 V,
Switch OFF,
See Figure 13
VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,
Switch OFF,
See Figure 13
Switch OFF,
See Figure 13
VCOM = 0 to 2.7 V,
VNO = 2.7 V to 0,
Switch OFF,
See Figure 13
INO(ON)
VNO = 0.5 V,
VCOM = Open,
or
VNO = 2.3 V,
VCOM = Open,
Switch ON,
See Figure 14
ICOM(ON)
VCOM = 0.5 V,
VNO = Open,
or
VCOM = 2.3 V,
VNO = Open,
ICOM(OFF)
Full
1.2
0.04
2.3 V
25°C
Full
25°C
Full
2.3 V
Full
Ω
Ω
0.6
Ω
0.6
2.7 V
0V
2.7 V
0V
–2
2
15
0.3
0.05
2
15
0.3
–20
mA
nA
mA
2
20
0.3
nA
5
50
–15
–2
2.7 V
0.05
–50
–2
5
50
–15
–2
2.7 V
0.3
–50
–5
25°C
Switch ON,
See Figure 14
0.4
–5
25°C
Full
Ω
0.7
25°C
Full
V
0.15
0.15
Full
Full
2.1
2.4
25°C
25°C
2.4
2.6
2.3 V
25°C
VNO = 2.3 V,
VCOM = 0.5 V,
or
VNO = 0.5 V,
VCOM = 2.3 V,
ICOM(PWROFF)
NO
ON leakage
current
Full
1.8
2.3 V
25°C
INO(PWROFF)
COM
OFF leakage
current
Full
V+
nA
2
–20
20
nA
Digital Control Inputs (IN1, IN2)
Input logic high
VIH
Full
1.8
5.5
V
Input logic low
VIL
Full
0
0.6
V
Input leakage
current
IIH, IIL
(1)
VI = 5.5 V or 0
25°C
Full
2.7 V
–2
–20
0.3
2
20
nA
The algebraic convention is used in this data sheet; the most negative value is shown in the minimum column.
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TS5A23166
SCDS196E – MAY 2005 – REVISED MARCH 2010.
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Electrical Characteristics for 2.5-V Supply (1) (continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
6
10
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
Charge
injection
QC
VGEN = 0,
RGEN = 0,
NO
OFF
capacitance
CNO(OFF)
COM
OFF
capacitance
CCOM(OFF)
NO
ON
capacitance
CNO(ON)
COM
ON
capacitance
CCOM(ON)
Digital input
capacitance
CI
25°C
2.5 V
2
Full
2.3 V to
2.7 V
1
12
4.5
8
ns
25°C
2.5 V
Full
2.3 V to
2.7 V
CL = 1 nF,
See Figure 20
25°C
2.5 V
4
pC
VNO = V+ or GND,
Switch OFF,
See Figure 15
25°C
2.5 V
19.5
pF
VCOM = V+ or GND,
Switch OFF,
See Figure 15
25°C
2.5 V
18.5
pF
VNO = V+ or GND,
Switch ON,
See Figure 15
25°C
2.5 V
36.5
pF
VCOM = V+ or GND,
Switch ON,
See Figure 15
25°C
2.5 V
36.5
pF
VI = V+ or GND,
See Figure 15
25°C
2.5 V
2
pF
3
12.5
15
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 17
25°C
2.5 V
150
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
25°C
2.5 V
–62
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 19
25°C
2.5 V
–85
dB
Total
harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 21
25°C
2.5 V
0.02
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
(1)
8
I+
25°C
Full
2.7 V
0.001
0.02
0.25
mA
The algebraic convention is used in this data sheet; the most negative value is shown in the minimum column.
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Electrical Characteristics for 1.8-V Supply (1)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO
Peak ON
resistance
rpeak
ON-state
resistance
ron
ON-state
resistance
match
between
channels
ON-state
resistance
flatness
NO
OFF leakage
current
Δron
ron (flat)
INO(OFF)
COM
ON leakage
current
Switch ON,
See Figure 12
25°C
VNO = 0.6 V, 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 12
25°C
VNO = 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 12
0 ≤ VNO ≤ V+,
ICOM = –2 mA,
Switch ON,
See Figure 12
VNO = 0.6 V, 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 12
VNO = 0.3 V,
VCOM = 1.65 V,
or
VNO = 1.65 V,
VCOM = 0.3 V,
Full
Full
Switch OFF,
See Figure 13
VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,
Switch OFF,
See Figure 13
Switch OFF,
See Figure 13
VCOM = 0 to 1.95 V,
VNO = 1.95 V to 0,
Switch OFF,
See Figure 13
INO(ON)
VNO = 0.3 V,
VCOM = Open,
or
VNO = 1.65 V,
VCOM = Open,
Switch ON,
See Figure 14
ICOM(ON)
VNO = Open,
VCOM = 0.3 V,
or
VNO = Open,
VCOM = 1.65 V,
ICOM(OFF)
Full
25°C
1.6
0.04
1.65 V
Full
Full
25°C
Full
4.1
Ω
Ω
22
Ω
27
–5
1.95 V
0V
1.95 V
0V
–2
2
10
0.3
0.05
2
10
0.3
–20
mA
nA
mA
2
20
0.3
nA
5
50
–10
–2
1.95 V
0.05
–50
–2
5
50
–10
–2
1.95 V
0.3
–50
–5
25°C
Full
Ω
2.8
1.65 V
25°C
Full
V
0.2
0.2
Full
25°C
3.9
4
25°C
Full
25
30
1.65 V
25°C
Switch ON,
See Figure 14
V+
4.2
1.65 V
25°C
VNO = 1.65 V,
VCOM = 0.3 V,
or
VNO = 0.3 V,
VCOM = 1.65 V,
ICOM(PWROFF)
NO
ON leakage
current
0 ≤ VNO ≤ V+,
ICOM = –2 mA,
25°C
INO(PWROFF)
COM
OFF leakage
current
0
nA
2
–20
20
nA
Digital Control Inputs (IN1, IN2)
Input logic high
VIH
Full
1.5
5.5
V
Input logic low
VIL
Full
0
0.6
V
Input leakage
current
IIH, IIL
(1)
VI = 5.5 V or 0
25°C
Full
1.95 V
–2
–20
0.3
2
20
mA
The algebraic convention is used in this data sheet; the most negative value is shown in the minimum column.
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Electrical Characteristics for 1.8-V Supply (1) (continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
9
18
UNIT
Dynamic
25°C
1.8 V
3
Full
1.65 V to
1.95 V
1
25°C
1.8 V
5
Full
1.65 V to
1.95 V
4
CL = 1 nF,
See Figure 20
25°C
1.8 V
2
pC
VNO = V+ or GND,
Switch OFF,
See Figure 15
25°C
1.8 V
19.5
pF
VCOM = V+ or GND,
Switch OFF,
See Figure 15
25°C
1.8 V
18.5
pF
VNO = V+ or GND,
Switch ON,
See Figure 15
25°C
1.8 V
36.5
pF
VCOM = V+ or GND,
Switch ON,
See Figure 15
25°C
1.8 V
36.5
pF
VI = V+ or GND,
See Figure 15
25°C
1.8 V
2
pF
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
Charge
injection
QC
VGEN = 0,
RGEN = 0,
NO
OFF
capacitance
CNO(OFF)
COM
OFF
capacitance
CCOM(OFF)
NO
ON
capacitance
CNO(ON)
COM
ON
capacitance
CCOM(ON)
Digital input
capacitance
CI
20
10
ns
15.5
18.5
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 17
25°C
1.8 V
150
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
25°C
1.8 V
–62
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 21
25°C
1.8 V
0.055
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
(1)
10
I+
25°C
Full
1.95 V
0.001
0.01
0.15
mA
The algebraic convention is used in this data sheet; the most negative value is shown in the minimum column.
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TYPICAL PERFORMANCE
3.5
3.0
TA = 25_C
ron (Ω)
2.5
V+ = 1.8 V
2.0
1.5
V+ = 2.5 V
V+ = 3.3 V
1.0
V+ = 5 V
0.5
0.0
0
1
2
3
4
5
6
VCOM (V)
Figure 1. ron vs VCOM
1.6
1.4
ron (W)
1.2
855C
1.0
0.8
255C
0.6
–405C
0.4
0.2
0.0
0
1
2
3
4
VCOM (V)
Figure 2. ron vs VCOM (V+ = 3.3 V)
1.2
1.0
855C
255C
ron (W)
0.8
–405C
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
VCOM (V)
Figure 3. ron vs VCOM (V+ = 5 V)
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TYPICAL PERFORMANCE (continued)
70
ICOM(OFF)
Leakage Current (nA)
60
50
40
INO/NC(OFF)
30
20
INO/NC(ON)
10
ICOM(ON)
0
−40°C
25°C
TA (°C)
85°C
Figure 4. Leakage Current vs Temperature (V+ = 5.5 V)
20
Charge Injection (pC)
15
10
V+ = 5 V
V+ = 3 V
5
0
−5
−10
−15
0
1
2
3
4
5
Bias Voltage (V)
Figure 5. Charge Injection (QC) vs VCOM
12
10
tON
tON/tOFF (ns)
8
tOFF
6
4
2
0
0
1
2
3
V+ (V)
4
5
6
Figure 6. tON and tOFF vs Supply Voltage
12
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TYPICAL PERFORMANCE (continued)
10
tOFF
9
tON/tOFF (ns)
8
7
6
tON
5
4
3
2
1
0
-40 °C
25°C
TA (°C)
85°C
Figure 7. tON and tOFF vs Temperature (V+ = 5 V)
0
−1
Gain (dB)
−2
−3
−4
−5
−6
−7
−8
−9
0.1
1
10
100
1000
Frequency (MHz)
Figure 8. Bandwidth (V+ = 5 V)
0
Attenuation (dB)
−20
−40
−60
−80
−100
−120
0.1
1
10
Frequency (MHz)
100
1000
Figure 9. OFF Isolation and Crosstalk (V+ = 5 V)
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TYPICAL PERFORMANCE (continued)
0.010
0.009
THD + (%)
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0.000
0
10
100
1000
Frequency (Hz)
10000
100000
Figure 10. Total Harmonic Distortion vs Frequency
160
140
120
I+ (nA)
100
80
60
40
20
0
-40 °C
25°C
TA (°C)
85°C
Figure 11. Power-Supply Current vs Temperature (V+ = 5 V)
Table 2. PIN DESCRIPTION
14
PIN NUMBER
NAME
1
NO1
DESCRIPTION
2
COM1
3
IN2
4
GND
Digital ground
5
NO2
Normally open
6
COM2
7
IN1
Digital control pin to connect COM to NO
8
V+
Power Supply
Normally open
Common
Digital control pin to connect COM to NO
Common
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Table 3. PARAMETER DESCRIPTION
SYMBOL
VCOM
VNO
ron
ron(flat)
DESCRIPTION
Voltage at COM
Voltage at NO
Resistance between COM and NO ports when the channel is ON
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output
(NO) open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control
input.Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
CI
Capacitance of IN
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NO to COM) in the OFF state.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
THD
Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higher
harmonics to the magnitude of fundamental harmonic.
I+
ΔI+
Static power-supply current with the control (IN) pin at V+ or GND
This is the increase in I+ for each control (IN) input that is at the specified voltage, rather than at V+ or GND.
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PARAMETER MEASUREMENT INFORMATION
V+
VNO NO
COM
+
VCOM
Channel ON
r on +
VI
ICOM
IN
VCOM * VNO
W
I COM
VI = VIH or VIL
+
GND
Figure 12. ON-State Resistance (ron)
V+
VNO NO
COM
+
VCOM
+
VI
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
IN
+
GND
Figure 13. OFF-State Leakage Current (ICOM(OFF), INC(OFF), ICOM(PWROFF), INC(PWR(FF))
V+
VNO NO
COM
+
VI
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
IN
+
GND
Figure 14. ON-State Leakage Current (ICOM(ON), INC(ON))
16
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
VNO
NO
Capacitance
Meter
VBIAS = V+ or GND
VI = V+ or GND
COM
COM
VI
IN
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
VBIAS
GND
Figure 15. Capacitance (CI, CCOM(OFF), CCOM(ON), CNC(OFF), CNC(ON))
V+
NO
VCOM
VI
Logic
Input(1)
VNO
TEST
RL
CL
tON
50 Ω
35 pF
V+
tOFF
50 Ω
35 pF
V+
COM
CL(2)
IN
GND
RL
V+
Logic
Input
(VI)
50%
50%
0
tON
tOFF
Switch
Output
(VNO)
(1)
(2)
VCOM
90%
90%
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
CL includes probe and jig capacitance.
Figure 16. Turn-On (tON) and Turn-Off Time (tOFF)
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
Network Analyzer
50 W
VNO
NO
Channel ON: NO to COM
VCOM
COM
VI = VIH or VIL
Source
Signal
Network Analyzer Setup
VI
50 W
IN
Source Power = 0 dBm
(632-mV P-P at 50-W load)
+
GND
DC Bias = 350 mV
Figure 17. Bandwidth (BW)
V+
Network Analyzer
Channel OFF: NO to COM
50 W
VNO NO
VI = V+ or GND
COM
Source
Signal
VCOM
50 W
Network Analyzer Setup
VI
50 W
Source Power = 0 dBm
(632-mV P-P at 50-W load)
IN
+
GND
DC Bias = 350 mV
Figure 18. OFF Isolation (OISO)
V+
Network Analyzer
50 W
VNO1
Source
Signal
VNO2
NO1
NO2
COM2
50 W
VI
Channel ON: NO to COM
COM1
50 W
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-W load)
IN
+
GND
DC Bias = 350 mV
Figure 19. Crosstalk (XTALK)
18
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
RGEN
VGEN
Logic
Input
(VI)
VIH
OFF
ON
OFF V
IL
NO
COM
+
VCOM
∆VCOM
VCOM
CL(1)
VI
VGEN = 0 to V+
IN
Logic
Input(2)
(1)
(2)
RGEN = 0
CL = 1 nF
QC = CL × ∆VCOM
VI = VIH or VIL
GND
CL includes probe and jig capacitance.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
Figure 20. Charge Injection (QC)
Channel ON: COM to NO
VSOURCE = V+ P-P
VI = V+/2 or −V+/2
RL = 600 Ω
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
V+/2
Audio Analyzer
NO
Source
Signal
COM
CL(1)
600 W
VI
IN
600 W
−V+/2
(1)
CL includes probe and jig capacitance.
Figure 21. Total Harmonic Distortion (THD)
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PACKAGE OPTION ADDENDUM
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11-Mar-2010
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TS5A23166DCUR
ACTIVE
US8
DCU
8
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23166DCURE4
ACTIVE
US8
DCU
8
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23166DCURG4
ACTIVE
US8
DCU
8
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A23166YZPR
ACTIVE
DSBGA
YZP
8
3000 Green (RoHS &
no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
TS5A23166YZTR
ACTIVE
DSBGA
YZT
8
3000 Green (RoHS &
no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2010
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TS5A23166DCUR
US8
DCU
8
3000
180.0
9.2
2.25
3.35
1.05
4.0
8.0
Q3
TS5A23166YZPR
DSBGA
YZP
8
3000
180.0
8.4
1.02
2.02
0.63
4.0
8.0
Q1
TS5A23166YZTR
DSBGA
YZT
8
3000
180.0
8.4
1.02
2.02
0.75
4.0
8.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2010
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TS5A23166DCUR
US8
DCU
8
3000
202.0
201.0
28.0
TS5A23166YZPR
DSBGA
YZP
8
3000
220.0
220.0
34.0
TS5A23166YZTR
DSBGA
YZT
8
3000
220.0
220.0
34.0
Pack Materials-Page 2
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