PHOTOMULTlPLlER TUBE R5108 28mm (1-1/8 Inch) Transmission Mode S–1 Photocathode, Side–on Type FEATURES Wide Photocathode High Infrared Sensitivity Excellent Spatial Uniformity Fast Time Response APPLICATIONS Near Infrared Spectrophotometer Raman Spectrophotometer Photo Luminescence Measurement GENERAL Figure 1: Electron Trajectories Parameter Description Spectral Response Wavelength of Maximum Response 400 to 1200 nm 800 nm Ag–O–Cs 16(H) 18(W) mm Photocathode MateriaI Minimum Effective Area Window Material Dynode Structure Number of Stages Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base SuitabIe Socket Applicable Socket Assembly Unit LIGHT PHOTOELECTRONS PHOTOCATHODE Borosilicate glass GLASS BULB Circular-cage 9 1.2 3.4 11-pin base JEDEC No. B11-88 E678–11A (option) pF pF 2nd DYNODE FOCUSING ELECTRODES 1st DYNODE 3rd DYNODE TPMSC0003EB E717–21 (option) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1994 Hamamatsu Photonics K.K. PHOTOMULTlPLlER TUBE R5108 MAXIMUM RATINGS (Absolute Maximum Values) Parameter NOTES Value Unit 1500 250 Vdc Vdc 0.1 mA A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 150 volts between the cathode and all other electrodes connected together as anode. C: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Supply Voltage Between Anode and Cathode Between Anode and Last Dynode Average Anode Current A CHARACTERISTlCS (at 25 Parameter ) Table 1:Voltage Distribution Ratio Min. Typ. Max. Electrodes Unit K Ratio Cathode Sensitivity Quantum Efficiency at 1060nm Luminous B Radiant at 800nm 10 Anode Sensitivity Luminous C % A/lm mA/W 7.5 A/lm 3.5 Gain C Anode Dark Current D (after 30min. storage in the darkness) Time Response Anode Pulse Rise Time Electron Transit Time F 0.04 25 2.2 3.0 E 1.2 18 1 1 1 1 1 1 1 P 1 D: Measured at the voltage which gives anode luminous sensitivity of 4A/lm. E: The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. F: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. nA 1000 1 SuppIy Voltage : 1250Vdc K : Cathode, Dy : Dynode, P : Anode 105 350 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 ns ns Figure 2: Typical Spatial Uniformity SPOTSIZE : 1mm DIA X SUPPLY VOLTAGE : 1000V WAVELENGTH : 400nm RELATIVE SENSITIVITY (%) Y 100 80 80 60 60 40 40 20 20 0 0 8 4 0 4 DISTANCE FROM CENTER OF PHOTOCATHODE (mm) 8 9 4.5 0 4.5 9 DISTANCE FROM CENTER OF PHOTOCATHODE (mm) TPMSB0066EA RELATIVE SENSITIVITY (%) Y-Axis X-Axis 100 Figure 3: Typical Spectral Response TPMSB0042EA TPMSB0041EA 200 100 80 CATHODE RADIANT SENSITIVITY 10 60 40 TRAN SIT TIM 1 TIME (ns) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 100 Figure 4: Typical Time Response QUANTUM EFFICIENCY 0.1 E 20 10 8 6 4 0.01 2 0.001 200 400 600 800 1000 RISE 1 1200 300 500 WAVELENGTH (nm) 105 10–3 10–3 10–4 10–4 10–5 N GAIN I GA 104 10–6 NT E RR K 102 600 700 800 1500 TPMSB0044EA 10–5 10–6 CU R DA 103 ANODE DARK CURRENT (A) 106 1000 Figure 6: Typical Temperature Characteristics of Anode Dark Current (at 4A/lm) ANODE DARK CURRENT (A) TPMSB0043EA 700 SUPPLY VOLTAGE (V) Figure 5: Typical Gain and Anode Dark Current 107 TIME 1000 1200 SUPPLY VOLTAGE (V) 10–7 10–7 10–8 1500 10–8 –40 –30 –20 –10 0 10 TEMPERATURE ( 20 ) 30 40 PHOTOMULTlPLlER TUBE R5108 Figure 7: Dimensional Outline and Basing Diagram (Unit: mm) 29.0 1.7 18MIN. PHOTOCATHODE 16MIN. DY5 5 DY6 6 7 76MAX. 8 DY8 DY3 3 90MAX. 49.0 2.5 DY4 4 DY7 DY2 9 DY9 2 10 P 1 11 K DY1 DIRECTION OF LIGHT BOTTOM VIEW (BASING DIAGRAM) 34MAX. 11 PIN BASE JEDEC No. B11-88 HA COATING TPMSA0023EA Figure 8: Optional Accessories (Unit: mm) Socket E678-11A D Type Socket Assembly E717-21 49 PMT 3.5 33.0 0.3 5 38 SOCKET PIN No. 10 P DY9 DY8 3.5 41.0 0.5 C2 R8 C1 8 7 R7 4.8 33 5 DY7 29 C3 R9 9 38.0 0.3 49.0 0.3 R10 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK) DY6 6 DY5 5 DY4 4 DY3 3 DY2 2 DY1 K 1 R6 R to R10 : 330k C1 to C3 : 0.01 F R5 31.0 0.5 HOUSING (INSULATOR) R4 450 10 R3 18 4 29 POTTING COMPOUND R2 R1 11 –HV AWG22 (VIOLET) R1 to R10 : 330k C1 to C3 : 0.01 F TACCA0002ED TACCA0008EB Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741 TPMS1012E03 JUL. 1994