PHOTOMULTlPLlER TUBES R632, R632- 01 S-1 Spectral Response(QE 0.05% at 1.06 µm <R632-01>) 19mm(3/4 Inch) Diameter, 10–stage, Head–On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area Window Material Structure Dynode Number of Stages Base SuitabIe Socket Description/Value 400 to 1200 800 Ag–O–Cs 15 Borosilicate glass Linear focused 10 12 – pin glass base E678 –12L(supplied) Unit nm nm mm dia. MAXIMUM RATINGS (Absolute Maximum Values) Parameter Between Anode and Cathode Between Anode and Last Dynode Supply Voltage Value 1500 250 0.01 -80 to +50 Average Anode Current Ambient Temperature CHARACTERISTlCS (at 25 Cathode Sensitivity Anode Sensitivity Gain ) Parameter Luminous(2856K) Radiant at 800nm Red/White Ratio (with Toshiba IR – D80A) Quantum Efficiency at 1.06 m Luminous(2856K) Radiant at 800nm Anode Dark Current(at 4A/lm) Time Response Unit Vdc Vdc mA Anode Pulse Rise Time Electron Transit Time Min. 10 R632 R632– 01 R632 R632– 01 5 R632 R632– 01 Typ. 20 1.9 0.1 0.14 0.02 0.05 10 950 5 105 150 800 2.2 25 Unit A/lm mA/W Max. % % A/lm A/W nA nA ns ns 500 2000 NOTE: Anode characteristics are measured with the voItage distribution ratio shown below. VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Electrode Ratio 1.5 1 1 1 1 1 1 1 1 1 1 SuppIy Voltage : 1250Vdc, K:Cathode, Dy:Dynode, P:Anode P Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or commission. Specifications are subjected to change without notice. No patent right are granted to any of the circuits described herein. © 1996 Hamamatsu Photonics K.K. PHOTOMULTlPLlER TUBES R632, R632–01 100 Figure 2: Typical Gain and Anode Dark Current TPMHB0356EA 107 TPMHB0357EA 10-3 10-4 10 105 CATHODE RADIANT SENSITIVITY 10-5 G R632-01 104 103 102 R632 0.1 QUANTUM EFFICIENCY 0.01 200 400 600 10-7 10-8 101 800 10-9 100 500 1000 600 800 700 10-10 1500 1000 SUPPLY VOLTAGE (V) WAVELENGTH (nm) Figure 3: Typical Temperature Characteristics of Dark Current 10-5 10-6 T EN RR U C K NT AR D RE 1 R 0 CU 32 K R6 AR D 32 R6 GAIN 1 N AI Figure 4: Dimensional Outline and Basing Diagram (Unit : mm) 18.6 0.7 FACEPLATE TPMHB0358EA 15MIN. Socket TUBE TYPE: R632-01 (E678 – 12L) PHOTOCATHODE 35 10-7 28.6 13 2– 3.2 2-R4 9 360 13 10-9 (23.6) 10-8 6.7 88 2 ANODE DARK CURRENT (A) 10-6 10-10 18 2 -20 -10 0 10 20 AMBIENT TEMPERATURE (°C) 30 12 PIN BASE 7 9.5 3.3 3.7 (8) -30 13MAX. 10-12 -40 10.5 10-11 2 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 106 ANODE DARK CURRENT (A) Figure 1: Typical Spectral Response 13 DY10 6 P 5 DY8 7 DY6 8 DY9 4 9 DY4 TACCA0047EA 10 DY2 DY7 3 DY5 18 11 2 1 DY3 12 K DY1 SHORT PIN BOTTOM VIEW (BASING DIAGRAM) TPMHA0360EA HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741 TPMH1142E01 FEB. 1996