HARRIS HA2840

HA-2840
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Features
A 625V/µs slew rate and a 600MHz gain bandwidth product
ensure high performance in video and RF amplifier designs.
Differential gain and phase are a low 0.03% and 0.03
degrees respectively, making the HA-2840 ideal for video
applications. A full ±10V output swing, high open loop gain,
and outstanding AC parameters, make the HA-2840 an
excellent choice for high speed Data Acquisition Systems.
The HA-2840 is available in commercial and industrial
temperature ranges, and a choice of packages. See the
“Ordering Information” below for more information. For
military grade product, refer to the HA-2840/883 data sheet.
•
•
•
•
•
•
•
•
Low Supply Current . . . . . . . . . . . . . . . . . . . . . . . . . 13mA
Very High Slew Rate . . . . . . . . . . . . . . . . . . . . . . 625V/µs
Open Loop Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . 25kV/V
Wide Gain-Bandwidth (AV ≥ 10) . . . . . . . . . . . . . . 600MHz
Full Power Bandwidth . . . . . . . . . . . . . . . . . . . . . . . 10MHz
Low Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .0.6mV
Differential Gain/Phase. . . . . . . . . . . 0.03%/0.03 Degrees
Enhanced Replacement for EL2039
Applications
•
•
•
•
Pulse and Video Amplifiers
Wideband Amplifiers
High Speed Sample-Hold Circuits
RF Oscillators
Pinouts
HA-2840
(CERDIP, PDIP, SOIC)
TOP VIEW
Part Number Information
PACKAGE
PKG.
NO.
HA3B2840-5
0 to 75
14 Ld PDIP
E14.3
HA3-2840-5
0 to 75
8 Ld PDIP
E8.3
HA9P2840-5
(H28405)
0 to 75
8 Ld SOIC
M8.15
HA3B2840-9
-40 to 85
14 Ld PDIP
E14.3
HA7-2840-9
-40 to 85
8 Ld CERDIP
F8.3A
HA3-2840-9
-40 to 85
8 Ld PDIP
E8.3
NC
1
8
NC
-IN
2
7
V+
+IN
3
6
OUT
V-
4
5
NC
+
TEMP.
RANGE (oC)
HA-2840
(PDIP)
TOP VIEW
NC 1
14 NC
NC 2
13 NC
NC 3
12 NC
-IN 4
11 V+
+IN 5
+
The HA-2840 is a wideband, very high slew rate, operational
amplifier featuring superior speed and bandwidth
characteristics. Bipolar construction, coupled with dielectric
isolation, delivers outstanding performance in circuits with a
closed loop gain of 10 or greater.
PART NUMBER
(BRAND)
File Number 2842.3
-
600MHz, Very High Slew Rate
Operational Amplifier
September 1998
-
Semiconductor
10 OUT
V- 6
9 NC
NC 7
8 NC
NOTE: No Connection (NC) pins may be tied to a ground plane for
better isolation and heat dissipation.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Copyright © Harris Corporation 1998
HA-2840
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals. . . . . . . . . . . . . . . . . . . . 35V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Thermal Resistance (Typical, Note 2)
θJA (oC/W) θJC (oC/W)
14 Lead PDIP Package . . . . . . . . . . . . . .
80
N/A
8 Lead CERDIP Package. . . . . . . . . . . . .
135
50
8 Lead PDIP Package . . . . . . . . . . . . . . .
96
N/A
8 Lead SOIC Package . . . . . . . . . . . . . . .
157
N/A
Maximum Internal Quiescent Power Dissipation (Note 1)
Maximum Junction Temperature (Ceramic Package) . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range
HA-2840-5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC
HA-2840-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
Recommended Supply Voltage Range . . . . . . . . . . . . ±7V to ±15V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Maximum power dissipation with load conditions must be designed to maintain the maximum junction temperature below 175oC for ceramic
packages and below 150oC for plastic packages.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
VSUPPLY = ±15V, RL = 1kΩ, CL ≤ 10pF, Unless Otherwise Specified
Electrical Specifications
HA-2840-5, -9
TEMP (oC)
MIN
TYP
MAX
UNITS
25
-
0.6
2
mV
Full
-
2
6
mV
Average Offset Voltage Drift
Full
-
20
-
µV/oC
Bias Current (Note 8)
25
-
5
14.5
µA
Full
-
8
20
µA
25
-
1
4
µA
Full
-
-
8
µA
Input Resistance
25
-
10
-
kΩ
Input Capacitance
25
-
1
-
pF
Common Mode Range
Full
±10
-
-
V
PARAMETER
TEST CONDITIONS
INPUT CHARACTERISTICS
Offset Voltage (Note 8)
Offset Current
Input Noise Voltage (Note 8)
f = 1kHz, RSOURCE = 0Ω
25
-
6
-
nV ⁄ Hz
Input Noise Current (Note 8)
f = 1kHz, RSOURCE = 10kΩ
25
-
6
-
pA ⁄ Hz
Note 3
25
20
25
-
kV/V
Full
15
20
-
kV/V
Full
75
80
-
dB
25
10
-
-
V/V
VO = 90mV, AV = +100
25
-
600
-
MHz
Output Voltage Swing (Note 8)
Note 3
Full
±10
-
-
V
Output Current (Note 8)
Note 3
Full
±10
±20
-
mA
25
-
30
-
Ω
TRANSFER CHARACTERISTICS
Large Signal Voltage Gain
Common-Mode Rejection Ratio (Note 8)
VCM = ±10V
Minimum Stable Gain
Gain Bandwidth Product (Note 8)
OUTPUT CHARACTERISTICS
Output Resistance
Full Power Bandwidth (Note 4)
Note 3
25
8.7
10
-
MHz
Differential Gain (Note 7)
AV = 10
25
-
0.03
-
%
2
HA-2840
Electrical Specifications
VSUPPLY = ±15V, RL = 1kΩ, CL ≤ 10pF, Unless Otherwise Specified (Continued)
HA-2840-5, -9
PARAMETER
TEST CONDITIONS
TEMP (oC)
MIN
TYP
MAX
UNITS
Differential Phase (Note 7)
AV = 10
25
-
0.03
-
Degrees
Harmonic Distortion (Note 8)
AV = 10, VO = 2VP-P, f = 1MHz
25
-
-79
-
dBc
Rise Time
25
-
4
-
ns
Overshoot
25
-
20
-
%
TRANSIENT RESPONSE (Note 5)
Slew Rate (Notes 6, 8)
Note 3
25
550
625
-
V/µs
Settling Time
10V Step to 0.1%
25
-
180
-
ns
Full
-
13
15
mA
Full
75
90
-
dB
POWER REQUIREMENTS
Supply Current (Note 8)
VS = ±10V to ±20V
Power Supply Rejection Ratio (Note 8)
NOTES:
3. RL = 1kΩ, VO = ±10V, 0V to ±10V for slew rate.
Slew Rate
4. Full Power Bandwidth guaranteed based on slew rate measurement using: FPBW = --------------------------- ; ( V
.
PEAK = 10V )
2πV PEAK
5. Refer to Test Circuit section of data sheet.
6. This parameter is not tested. The limits are guaranteed based on lab characterization, and reflect lot-to-lot variation.
7. Differential gain and phase are measured with a VM700A video tester, using a NTC-7 composite VITS.
8. See “Typical Performance Curves” for more information.
Test Circuits and Waveforms
IN
+
OUT
-
900Ω
9. VS = ±15V.
100Ω
10. AV = +10.
11. CL < 10pF.
TEST CIRCUIT
INPUT
INPUT
OUTPUT
OUTPUT
Input = 1V/Div.
Output = 5V/Div.
50ns/Div.
LARGE SIGNAL RESPONSE
3
Input = 10mV/Div.
Output = 100mV/Div.
50ns/Div.
SMALL SIGNAL RESPONSE
HA-2840
Test Circuits and Waveforms
(Continued)
V+ 0.001µF
NOTES:
12. AV = -10.
13. Load Capacitance should be less than 10pF.
200Ω
INPUT
-
1µF
+
0.001µF
OUTPUT
PROBE
MONITOR
500Ω
V-
1µF
2kΩ
5kΩ
SETTLING
POINT
14. It is recommended that resistors be carbon composition
and that feedback and summing network ratios be
matched to 0.1%.
15. SETTLING POINT (Summing Node) capacitance should
be less than 10pF. For optimum settling time results, it is
recommended that the test circuit be constructed directly
onto the device pins. A Tektronix 568 Sampling
Oscilloscope with S-3A sampling heads is recommended as a settle point monitor.
SETTLING TIME TEST CIRCUIT
Typical Performance Curves
TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified
100
650
40
20
0
AVCL = 1000
AVCL = 100
AVCL = 10
0
PHASE (DEGREES)
GAIN (dB)
60
90
OPEN LOOP
1K
10K
180
100K
1M
10M
GAIN BANDWIDTH PRODUCT (MHz)
OPEN LOOP
80
600
550
500
100M
5
6
7
FIGURE 1. FREQUENCY RESPONSE FOR VARIOUS GAINS
9
10
11
12
13
14
15
FIGURE 2. GAIN BANDWIDTH PRODUCT vs SUPPLY VOLTAGE
750
90
80
650
70
550
CMRR (dB)
GAIN BANDWIDTH PRODUCT (MHz)
8
SUPPLY VOLTAGE (±V)
FREQUENCY (Hz)
450
60
50
40
350
30
250
-60
-40
-20
0
20
40
60
80
100
120
140
TEMPERATURE (oC)
FIGURE 3. GAIN BANDWIDTH PRODUCT vs TEMPERATURE
4
20
100
1K
10K
100K
FREQUENCY (Hz)
FIGURE 4. CMRR vs FREQUENCY
1M
10M
HA-2840
Typical Performance Curves
TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified (Continued)
110
50
±PSRR
80
PSRR (dB)
NOISE VOLTAGE (nV/√Hz)
90
70
60
50
40
30
37.5
30
20
25
NOISE CURRENT
NOISE VOLTAGE
10
12.5
20
NOISE CURRENT (pA/√Hz)
100
10
0
100
1K
10K
100K
FREQUENCY (Hz)
1M
0
10
10M
100
1K
0
100K
10K
FREQUENCY (Hz)
FIGURE 5. PSRR vs FREQUENCY
FIGURE 6. INPUT NOISE vs FREQUENCY
750
700
650
SLEW RATE (V/µs)
SLEW RATE (V/µs)
700
650
600
600
550
500
550
-60
450
-40
-20
0
20
40
60
80
100
120
140
5
6
7
8
TEMPERATURE (oC)
9
10
11
12
13
14
15
14
15
SUPPLY VOLTAGE (±V)
FIGURE 7. SLEW RATE vs TEMPERATURE
FIGURE 8. SLEW RATE vs SUPPLY VOLTAGE
8.0
14
2.5
6.0
BIAS CURRENT
OFFSET VOLTAGE
1.5
5.0
0.5
4.0
SUPPLY CURRENT (mA)
7.0
INPUT OFFSET VOLTAGE (mV)
INPUT BIAS CURRENT (µA)
3.5
12
125oC
-55oC
25oC
10
8
-0.5
3.0
-60
6
-40 -20
0
20
40
60
80
100 120 140
TEMPERATURE (oC)
FIGURE 9. INPUT OFFSET VOLTAGE AND INPUT BIAS
CURRENT vs TEMPERATURE
5
5
6
7
8
9
10
11
12
13
SUPPLY VOLTAGE (±V)
FIGURE 10. SUPPLY CURRENT vs SUPPLY VOLTAGE
HA-2840
Typical Performance Curves
TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified (Continued)
-2.5
±8V, 75Ω
±8V, 150Ω
12.5
OUTPUT SWING (V)
POSITIVE OUTPUT SWING (V)
15
±15V, 1kΩ
10
±15V, 150Ω
7.5
±15V, 75Ω
5
-5
±8V, 1kΩ
±15V, 75Ω
-7.5
±15V, 150Ω
-10
2.5
±8V, 1kΩ
0
-60
-40
-20
0
±8V, 75Ω
±8V, 150Ω
20
40
60
80
100
±15V, 1kΩ
120
-12.5
-60
140
-40
-20
TEMPERATURE (oC)
20
40
60
80
100
120
140
TEMPERATURE (oC)
FIGURE 11. POSITIVE OUTPUT SWING vs TEMPERATURE
FIGURE 12. NEGATIVE OUTPUT SWING vs TEMPERATURE
-35
25
20
-45
VSUPPLY = ±15V
15
-55
THD (dBc)
OUTPUT VOLTAGE SWING (VP-P)
0
10
VSUPPLY = ±8V
5
0
1K
10K
100K
1M
10M
100M
-65
-75
VO = 10VP-P
-85
VO = 2VP-P
VO = 1VP-P
VO = 0.5VP-P
100K
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 13. MAXIMUM UNDISTORTED OUTPUT SWING vs
FREQUENCY
FIGURE 14. TOTAL HARMONIC DISTORTION vs FREQUENCY
THIRD INTERMOD PRODUCT (dBc)
-35
VO = 0.5VP-P
VO = 1VP-P
-45
VO = 2VP-P
-55
-65
VO = 5VP-P
-75
VO = 0.25VP-P
-85
-95
500K
1M
10M
FREQUENCY (Hz)
FIGURE 15. INTERMODULATION DISTORTION vs FREQUENCY (TWO TONE)
6
10M
HA-2840
Die Characteristics
DIE DIMENSIONS:
SUBSTRATE POTENTIAL (Powered Up):
65 mils x 52 mils x 19 mils
1650µm x 1310µm x 483µm
VTRANSISTOR COUNT:
METALLIZATION:
34
Type: Aluminum, 1% Copper
Thickness: 16kÅ ±2kÅ
PROCESS:
High Frequency Bipolar Dielectric Isolation
PASSIVATION:
Type: Nitride over Silox
Silox Thickness: 12kÅ ±2kÅ
Nitride thickness: 3.5kÅ ±1kÅ
Metallization Mask Layout
HA-2840
V+
OUT
-IN
+IN
V-
7