1SS82 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-149A (Z) Rev. 1 Jul. 1995 Features • High reverse voltage. (VR = 200V) • High reliability with glass seal. Ordering Information Type No. Cathode band 2nd band Package Code 1SS82 Verdure Light Blue DO-35 Outline 2 1 2nd band Cathode band 1. Cathode 2. Anode 1SS82 Absolute Maximum Ratings* 2 (Ta = 25°C) Item Symbol Peak reverse voltage VRM* Reverse voltage VR Peak forward current I FM 1 2 Value Unit 250 V 200 V 625 mA 1 A Non-Repetitive peak forward surge current I FSM * Average forward current IO 200 mA Power dissipation Pd 400 mW Junction temperature Tj 175 °C Storage temperature Tstg –65 to +175 °C Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic. 2. Within 1s forward surge current. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V I F = 100mA Reverse current I R1 — — 0.2 µA VR = 200V I R2 — — 100 Capacitance C — 1.5 — pF VR = 0V, f = 1MHz Reverse recovery time t rr — — 100 ns I F = IR = 30mA, Irr = 3mA, R L = 100Ω 2 VR = 250V 1SS82 –1 –2 10 10 Ta = 12 Ta = 5°C 75° C Ta = 25°C Ta = –25° C Forward current I F (A) 10 –3 –4 10 0 0.2 0.8 0.4 0.6 1.0 Forward voltage VF (V) 1.2 Fig.1 Forward current Vs. Forward voltage –5 10 Ta = 75°C Reverse current I R (A) –6 10 Ta = 50°C –7 10 Ta = 25°C 10 –8 –9 10 0 50 150 200 250 100 Reverse voltage VR (V) 300 Fig.2 Reverse current Vs. Reverse voltage 3 1SS82 f = 1MHz Capacitance C (pF) 10 1.0 –1 10 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 4 102 1SS82 Package Dimensions Unit: mm 4.2 Max 26.0 Min 1 φ 0.5 φ 2.0 Max 26.0 Min 1 Cathode 2 2 Anode 2nd band (Light Blue) Cathode band (Verdure) HITACHI Code DO-35 JEDEC Code DO-35 EIAJ Code SC-48 Weight (g) 0.13 5 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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