HITACHI 2SA1029

2SA1029, 2SA1030
Silicon PNP Epitaxial
Application
• Low frequency amplifier
• Complementary pair with 2SC458 and 2SC2308
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1029, 2SA1030
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SA1029
2SA1030
Unit
Collector to base voltage
VCBO
–30
–55
V
Collector to emitter voltage
VCEO
–30
–50
V
Emitter to base voltage
VEBO
–5
–5
V
Collector current
IC
–100
–100
mA
Emitter current
IE
100
100
mA
Collector power dissipation
PC
300
300
mW
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SA1029
2SA1030
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–30
—
—
–55
—
—
V
I C = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–30
—
—
–50
—
—
V
I C = –1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
–5
—
—
–5
—
—
V
I E = –10 µA, IC = 0
Collector cutoff current
I CBO
—
—
–0.5
—
—
–0.5
µA
VCB = –18 V, IE = 0
Emitter cutoff current
I EBO
—
—
–0.5
—
—
–0.5
µA
VEB = –2 V, IC = 0
100
—
500
100
—
320
Base to emitter voltage VBE
—
—
–0.8
—
—
–0.8
V
VCE = –12 V,
I C = –2 mA
Collector to emitter
saturation voltage
—
—
–0.2
—
—
–0.2
V
I C = –10 mA,
I B = –1 mA
Gain bandwidth product f T
200
280
—
200
280
—
MHz
VCB = –12 V,
I C = –2 mA
Collector output
capacitance
—
3.3
4.0
—
3.3
4.0
pF
VCB = –10 V, IE = 0,
f = 1 MHz
DC current trnsfer ratio
Note:
hFE*
1
VCE(sat)
Cob
1. The 2SA1029 and 2SA1030 are grouped by h FE as follows.
B
C
D
2SA1029
100 to 200
160 to 320
250 to 500
2SA1030
100 to 200
160 to 320
—
See characteristic curves of 2SA1031 and 2SA1032.
2
VCE = –12 V,
I C = –2 mA
2SA1029, 2SA1030
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
300
200
100
0
100
150
50
Ambient Temperature Ta (°C)
3
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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