2SA1960 Silicon NPN Epitaxial ADE-208-392 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SC5225. Features • High voltage large current operation. VCEO = –80 V, IC = –300 mA • High fT . fT = 1.3 GHz • Small output capacitance. Cob = 2.9 pF 2SA1960 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –3 V Collector current IC –300 mA Collector power dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C 2 2SA1960 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –80 — — V I C = –100 µA IE = 0 Collector to emitter breakdown voltage V(BR)CEO –80 — — V I C = –1 mA RBE = ∞ Collector to base cutoff current I CBO — — –1.0 µA VCB = –60 V IE = 0 Emitter to base cutoff current I EBO — — –10 µA VEB = –3 V IC = 0 DC current transfer ratio hFE 20 60 — Gain bandwidth product fT 1.1 1.3 — GHz VCE = –10 V I C = –50 mA Emitter input capacitance Cib — 14.5 18 pF VEB = 0, IC = 0 f = 1 MHz Collector output capacitance Cob — 2.9 4.0 pF VCB = –10 V, IE = 0 f = 1 MHz VCE = –5 V, IC = –50 mA Pulse test 3 2SA1960 DC Current Transfer Ratio vs. Collector Current 100 1000 DS Current Tranfer Ratio h FE Collector Power Dissipation Pc (mW) Collector Power Dissipation Curve 800 600 400 200 50 V CE = –5V 20 10 5 2 1 0 50 100 150 –100µ 200 –100 –500 Collector Current vs. Base to Emitter Voltage Collector to Emitter Saturation Voltage vs. Collector Current –5 –500 –200 –2 Collector Current I C (mA) Collector to Emitter Saturation Voltage VCE(sat) (V) –10 Collector Current I C (mA) Ambient Temperature Ta (°C) I C / I B = 10 –1 –0.5 –0.2 –0.1 –100 VCE = –5V –50 –20 –10 –5 –2 –1 –0.5 –0.2 –0.05 –100µ –0.1 –1 –10 –100 Collector Current I C (mA) 4 –1 –500 –0.5 –1.0 –1.5 Base to Emitter Voltage V BE (V) 2SA1960 Emitter Input Capacitance vs. Emitter to Base Voltage IE = 0 f = 1 MHz 5 2 1 –0.5 –1 –2 –5 –10 –20 Emitter Input Capacitance Cib (pF) 10 –50 Collector to Base Voltage V CB (V) 20 IC = 0 f = 1 MHz 10 5 2 –0.5 –1 –2 –5 Emitter to Base Voltage VEB (V) Gain Bandwidth Product vs. Collector Current 1.5 Gain Bandwidth Product f T (GHz) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage V CE = –10 V 1.0 0.5 0 –1 –2 –5 –10 –20 –50 –100 –200 Collector Current I C (mA) 5 Unit: mm 4.8 ± 0.3 0.7 0.60 Max 0.5 ± 0.1 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. 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