HITACHI 2SB1001

2SB1001
Silicon PNP Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SD1367
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SB1001
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–20
V
Collector to emitter voltage
VCEO
–16
V
Emitter to base voltage
VEBO
–6
V
Collector current
IC
–2
A
–3
A
1
W
1
Collector peak current
iC(peak) *
2
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–20
—
—
V
I C = –10 µA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO
–16
—
—
V
I C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–6
—
—
V
I E = –10 µA, IC = 0
Collector cutoff current
I CBO
—
—
–0.1
µA
VCB = –16 V, IE = 0
Emitter cutoff current
I EBO
—
—
–0.1
µA
VEB = –5 V, IC = 0
100
—
320
1
DC current transfer ratio
hFE*
Collector to emitter saturation
voltage
VCE(sat)
—
–0.15
–0.3
V
I C = –1 A,
I B = –0.1 A (Pulse test)
Base to emitter saturation
voltage
VBE(sat)
—
–1.0
–1.2
V
I C = –1 A,
I B = –0.1 A (Pulse test)
Gain bandwidth product
fT
—
150
—
MHz
VCE = –2 V,
I C = –10 mA
Collector output capacitance
Cob
—
50
—
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SB1001 is grouped by hFE as follows.
Mark
BH
BJ
hFE
100 to 200
160 to 320
2
VCE = –2 V,
I C = –0.1 A (Pulse test)
2SB1001
Typical Output Characteristics (1)
–100
1.2
.35
–0
Collector Current IC (mA)
Collector Power Dissipation Pc (W)
(on the alumina ceramic board)
Maximum Collector Dissipation Curve
0.8
0.4
–0.2
–60
–0.15
–40
–0.1
–0.05 mA
–20
0
50
100
150
Ambient Temperature Ta (°C)
–2
–4
–6
–8
–10
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
Typical Output Characteristics (2)
–25
–1,000
–20
–1
–10
–1.2
–5 mA
–0.8
–0.4
Collector Current IC (mA)
Collector Current IC (A)
5
–1.6
25
–0.
–80
IB = 0
0
–2.0
.3
–0
VCE = –2 V
Pulse
–300
–100
Ta = 75°C
–30
25
–10
–25
–3
IB = 0
–1
0
–0.4
–0.8
–1.2
–1.6
–2.0
Collector to Emitter Voltage VCE (V)
0
–0.2
–0.4
–0.6
–0.8
–1.0
Base to Emitter Voltage VBE (V)
3
2SB1001
DC Current Transfer Ratio vs.
Collector Current
Saturation Voltage vs. Collector Current
3,000
1,000
300
Collector to Emitter Saturation Voltage
VCE (sat) (V)
Base to Emitter Saturation Voltage
VBE (sat) (V)
DC Current Transfer Ratio hFE
10,000
VCE = –2 V
Pulse
25
Ta = 75°C
100
–25
30
10
–1
–3
–10 –30 –100 –300 –1,000
Collector Current IC (mA)
–3.0
VBE (sat)
–1.0
–0.3
–0.1
VCE (sat)
–0.03
IC = 10 IB
Pulse
–0.01
–0.003
–3
–10 –30 –100 –300 –1,000–3,000
Collector Current IC (mA)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
4
1,000
f = 1 MHz
IE = 0
300
100
30
10
–0.1
–0.3
–1.0
–3
–10
Collector to Base Voltage VCB (V)
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.