HITACHI 2SC1212A

2SC1212, 2SC1212A
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
1
1. Emitter
2. Collector
3. Base
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SC1212
2SC1212A
Unit
Collector to base voltage
VCBO
50
80
V
Collector to emitter voltage
VCEO
50
80
V
Emitter to base voltage
VEBO
4
4
V
Collector current
IC
1
1
A
Collector power dissipation
PC
0.75
0.75
W
8
8
W
PC *
1
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Note:
1. Value at TC = 25°C
2SC1212, 2SC1212A
Electrical Characteristics (Ta = 25°C)
2SC1212
2SC1212A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
50
—
—
80
—
—
V
I C = 1 mA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
50
—
—
80
—
—
V
I C = 10 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
4
—
—
4
—
—
V
I E = 1 mA, IC = 0
Collector cutoff current
I CBO
—
—
5
—
—
5
µA
VCB = 50 V, IE = 0
60
—
200
60
—
200
VCE = 4 V, IC = 50 mA
hFE
20
—
—
20
—
—
VCE = 4 V, IC = 1 A
(pulse test)
Base to emitter voltage VBE
—
0.65
1.0
—
0.65
1.0
V
VCE = 4 V, IC = 50 mA
Collector to emitter
saturation voltage
—
0.75
1.5
—
0.75
1.5
V
I C = 1 A, IB = 0.1 A
(pulse test)
—
160
—
—
160
—
MHz
VCE = 4 V, IC = 30 mA
DC current tarnsfer ratio hFE*
VCE(sat)
Gain bandwidth product f T
Note:
1
1. The 2SC1212 and 2SC1212A are grouped by h FE as follows.
B
C
60 to 120
100 to 200
Maximum Collector Dissipation Curve
Maximum Collector Dissipation Curve
0.75
0.5
0.25
0
2
12
Collector power dissipation PC (W)
Collector power dissipation PC (W)
1.0
50
100
150
Ambient temperature Ta (°C)
200
8
4
0
50
100
Case temperature TC (°C)
150
2SC1212, 2SC1212A
Typical Output Characteristics
Typical Output Characteristics
1.0
1.6
18
1.4
TC = 25°C
1.2
160
Collector current IC (A)
Collector current IC (mA)
200
1.0
120
0.8
0.6
80
0.4
40
0.2 mA
0.8
6
4
0.4
2 mA
0.2
IB = 0
20
50
10
30
40
Collector to emitter voltage VCE (V)
2
5
1
3
4
Collector to emitter voltage VCE (V)
0
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
1.0
180
25
120
–25
100
0.3
75°C
25
–25
140
TC = –
160
VCE = 4 V
TC = 75°C
Collector Current IC (A)
VCE = 4 V
DC current transfer ratio hFE
TC = 25°C
8
0.6
IB = 0
0
16
14
12
10
0.1
0.03
80
60
0.01 0.02
0.01
0.05 1.0 0.2
0.5
Collector current IC (A)
1.0
0
0.2 0.4
0.6 0.8 1.0
1.2
Base to emitter voltage VBE (V)
3
Unit: mm
2.7 ± 0.4
120°
3.7 ± 0.7
11.0 ± 0.5
12
0°
2.3 ± 0.3
φ 3.1 +0.15
–0.1
12
0°
8.0 ± 0.5
15.6 ± 0.5
1.1
0.8
2.29 ± 0.5
2.29 ± 0.5
0.55
1.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
—
—
0.67 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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