HITACHI 2SC1342

2SC1342
Silicon NPN Epitaxial Planar
Application
• VHF amplifier, mixer
• Local oscollator
Outline
TO-92 (2)
1. Emitter
2. Collector
3. Base
3
2
1
2SC1342
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
4
V
Collector current
IC
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
20
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
4
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
µA
VCB = 10 V, IE = 0
35
—
200
1
DC current transfer ratio
hFE*
Collector to emitter saturation
voltage
VCE(sat)
—
0.8
1.2
V
I C = 10 mA, IB = 1 mA
Collector output capacitance
Cob
—
1.1
1.5
pF
VCB = 10 V, IE = 0, f = 1 MHz
Base time constant
rbb’ •CC
—
20
35
ps
VCB = 6 V, IC = 1 mA,
f = 31.8 MHz
Gain bandwidth product
fT
150
320
—
MHz
VCE = 6 V, IC = 1 mA
Noise figure
NF
—
5.5
8.5
dB
VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 50 Ω
Reverse transfer capacitance
Cre
—
0.9
1.2
pF
VCE = 10 V, IE = –1 mA,
f = 1 MHz
Power gain
PG
13
17
—
dB
VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 100 Ω,
RL = 550 Ω, Unneutralized
Note:
1. The 2SC1342 is grouped by h FE as follows.
A
B
C
35 to 70
60 to 120
100 to 200
2
VCE = 6 V, IC = 1 mA
2SC1342
Typical Output Characteristics (1)
20
Collector Current IC (mA)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
150
100
50
16
12
60
8
PC = 100 mW
40
4
20 µA
IB = 0
0
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics (2)
4
50
Typical Transfer Characteristics (1)
40
30
3
20
2
10 µA
1
IB = 0
0
4
8
12
16
20
Collector to Emitter Voltage VCE (V)
20
4
8
12
16
20
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
5
Collector Current IC (mA)
240 200
160
180
140
120
100
80
16
VCE = 6 V
12
8
4
0
0.60
0.64
0.68
0.72
0.76 0.80
Base to Emitter Voltage VBE (V)
3
2SC1342
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics (2)
140
4
VCE = 6 V
3
2
1
0
0.60
DC Current Transfer Ratio hFE
Collector Current IC (mA)
5
VCE = 6 V
120
100
80
60
40
20
0
0.1 0.2
0.5 1.0 2
5 10
Collector Current IC (mA)
0.64
0.68
0.72
0.76 0.80
Base to Emitter Voltage VBE (V)
4
2.0
1.8
f = 1 MHz
IE = 0
1.6
1.4
1.2
1.0
0.8
0.6
0.1 0.2
0.5 1.0 2
5 10 20
Collector to Base Voltage VCB (V)
Reverse Transfer Capacitance vs.
Collector to Emitter Voltage
Reverse Transfer Capacitance Cre (pF)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
20
2.8
2.4
2.0
1.6
f = 1 MHz
IE = –1 mA
1.2
0.8
0.4
0
0.1 0.2
0.5 1.0 2
5 10 20
Collector to Emitter Voltage VCE (V)
2SC1342
Gain Bandwidth Product vs.
Collector Current
450
1.0
Gain Bandwidth Product fT (MHz)
Reverse Transfer Capacitance Cre (pF)
Reverse Transfer Capacitance
vs. Emitter Current
0.8
0.6
0.4
VCE = 10 V
f = 1 MHz
0.2
0
–0.1
–0.2
–0.5 –1.0
–2
Emitter Current IE (mA)
400
350
300
250
200
150
100
12
12
10
Noise Figure NF (dB)
Noise Figure NF (dB)
Noise Figure vs. Collector Current
14
10
6
50
0
0.1 0.2 0.5 1.0 2
5 10 20
Collector Current IC (mA)
–5
Noise Figure vs. Collector to
Emitter Voltage
8
VCE = 6 V
IC = 1 mA
f = 100 MHz
Rg = 50 Ω
4
VCE = 6 V
f = 100 MHz
Rg = 50 Ω
8
6
4
2
2
0
0.1 0.2
0.5 1.0 2
5
10 20
Collector to Emitter Voltage VCE (V)
0
0.1
0.2
0.5 1.0
2
5
Collector Current IC (mA)
10
Power Gain Test Circuit
IN
f = 100 MHz
Rg = 100 Ω
300 p
D.U.T.
0.1 µ
10 p
max
3k
500
OUT
RL = 550 Ω
0.01 µ
0.01 µ
VEE
0.01 µ
VCC
Unit R : Ω
C:F
5
2SC1342
Small Signal y Parameters (VCE = 6V, IC = 1 mA, Emitter Common Ta = 25°C)
Item
Symbol
f = 50 MHz
f = 100 MHz
f = 200 MHz
Unit
Input admittance
yie
1.8 + j5.5
4.3 + j9.9
11.5 + j15.25
mS
Reverse transfer admittance
yre
–0.022 – j0.26
–0.04 – j0.52
–0.105 – j0.96
Forward transfer admittance
yfe
34 – j12
28 – j19
15.5 – j25
Output admittance
yoe
0.1 + j0.5
0.15 + j0.9
0.21 + j1.45
Reverse Transfer Admittance vs. Frequency
Input Admittance vs. Frequency
Reverse Transfer Conductance gre (mS)
24
–0.3
yie = gie + jbie
VCE = 6 V
–0.25
–0.2
yre = gre + jbre
VCE = 6 V
200
16
100
70
f = 50 MHz
5 mA
3 mA
8
2 mA
4 IC = 1 mA
300
32 1
–2.0
60
IC = 1 mA
Output Admittance vs. Frequency
3.0
80
100
yfe = gfe + jbfe
VCE = 6 V
2
–40
3
300
200
5
100
70
2.5
yoe = goe + jboe
VCE = 6 V
300
2.0
1.5
200
1.0
0.5
IC = 1 mA 2
3
5
100
70
f = 50 MHz
f = 50 MHz
0
–100
–1.6
42
Output Suceptance boe (mS)
Forward Transfer Suceptance bfe (mS)
6
40
–20
–80
–0.4
–1.2
IC = 5 mA
Forward Transfer Conductance gfe (mS)
20
70
100
–0.8
Forward Transfer Admittance vs. Frequency
–60
0
200
6
12 18 24 30 36
Input Conductance gie (mS)
0
–0.05
300
12
–20
0
–0.1
f = 50 MHz
20
0
–0.15
Reverse Transfer Suceptance bre (mS)
Input Suceptance bie (mS)
28
0.1
0.2
0.3
0.4
0.5
Output Conductance goe (mS)
0.6
2SC1342
Reverse Transfer Admittance vs.
Collector to Emitter Voltage
–1.0
bre
Input Admittance vs. Collector
to Emitter Voltage
Reverse Transfer Admittance yre (mS)
Input Admittance yie (mS)
20
bie
10
gie
5
Yie = gie + jbie
IC = 1 mA
f = 100 MHz
2
1
1
–0.5
–0.2
–0.1
–0.05
gre
–0.02
–0.01
2
5
10
20
Collector to Emitter Voltage VCE (V)
1
2
5
10 20
Collector to Emitter Voltage VCE (V)
Forward Transfer Admittance vs.
Collector to Emitter Voltage
Output Admittance vs. Collector to
Emitter Voltage
100
2.0
Yfe = gfe + jbfe
IC = 1 mA
f = 100 MHz
50
gfe
bfe
20
10
5
Output Admittance yoe (mS)
Forward Transfer yfe (mS)
Yre = gre + jbre
IC = 1 mA
f = 100 MHz
boe
1.0
Yoe = goe + jboe
IC = 1 mA
f = 100 MHz
0.5
goe
0.2
0.1
1
2
5
10
20
Collector to Emitter Voltage VCE (V)
1
2
5
10
20
Collector to Emitter Voltage VCE (V)
7
2SC1342
Reverse Transfer Admittance vs.
Collector Current
Input Admittance vs. Collector Current
Reverse Transfer Admittance yre (mS)
Input Admittance yie (mS)
50
Yie = gie + jbie
VCE = 6 V
f = 100 MHz
20
bie
10
5
gie
2
1.0
0.5
0.1
0.2
0.5 1.0
2
5
Collector Current IC (mA)
10
–1.0
–0.1
–0.02
–0.01
0.1
Yfe = gfe + jbfe
VCE = 6 V
f = 100 MHz
Output Admittance yoe (mS)
Forward Transfer Admittance yfe (mS)
8
10
Output Admittance vs. Collector Current
gfe
bfe
2
1
0.1
0.2
0.5 1.0
2
5
Collector Current IC (mA)
5
20
5
gre
–0.05
100
10
Yre = gre + jbre
VCE = 6 V
f = 100 MHz
–0.2
Forward Transfer Admittance vs.
Collector Current
50
bre
–0.5
0.2
0.5 1.0
2
5
Collector Current IC (mA)
10
2
1.0
0.5
boe
Yoe = goe + jboe
VCE = 6 V
f = 100 MHz
0.2
0.1
0.05
0.1
goe
0.2
0.5 1.0
2
5
Collector Current IC (mA)
10
Unit: mm
4.8 ± 0.3
2.3 Max
0.7
0.60 Max
0.45 ± 0.1
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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